IGBT HIGH POWER Search Results
IGBT HIGH POWER Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GC331AD7LQ103KX18D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GC331CD7LP683KX19L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GC332QD7LP104KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GC355DD7LP684KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GR331AD7LP333KW01D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for General Purpose |
IGBT HIGH POWER Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Technische Information / technical information DF600R12IP4D IGBT-Module IGBT-modules PrimePACK 2 mit soft schaltendem High Power IGBT4 und Emitter Controlled Diode4 PrimePACK™2 with soft switching High Power IGBT4 and Emitter Controlled Diode4 IGBT-Chopper / IGBT-chopper |
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DF600R12IP4D | |
Contextual Info: Technische Information / technical information FD1400R12IP4D IGBT-Module IGBT-modules PrimePACK 3 mit soft schaltendem High Power IGBT4 und Emitter Controlled Diode4 PrimePACK™3 with soft switching High Power IGBT4 and Emitter Controlled Diode4 IGBT-Chopper / IGBT-chopper |
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FD1400R12IP4D | |
FF900R12IP4D
Abstract: LA65
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FF900R12IP4D FF900R12IP4D LA65 | |
FF900R12IP4
Abstract: LA65
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FF900R12IP4 FF900R12IP4 LA65 | |
FF1400R12IP4
Abstract: ADTV
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FF1400R12IP4 FF1400R12IP4 ADTV | |
FF600R12IP4
Abstract: LT3971-3.3 LT3973-3.3
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FF600R12IP4 FF600R12IP4 LT3971-3.3 LT3973-3.3 | |
Contextual Info: Technische Information / technical information FF1400R12IP4 IGBT-Module IGBT-modules PrimePACK 3 mit soft schaltendem High Power IGBT4 und Emitter Controlled Diode4 PrimePACK™3 with soft switching High Power IGBT4 and Emitter Controlled Diode4 IGBT-Wechselrichter / IGBT-inverter |
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FF1400R12IP4 | |
Contextual Info: Technische Information / technical information DF900R12IP4D IGBT-Module IGBT-modules PrimePACK 2 mit soft schaltendem High Power IGBT4 und Emitter Controlled Diode4 PrimePACK™2 with soft switching High Power IGBT4 and Emitter Controlled Diode4 IGBT-Chopper / IGBT-chopper |
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DF900R12IP4D | |
FD600R12IP4DContextual Info: Technische Information / technical information FD600R12IP4D IGBT-Module IGBT-modules PrimePACK 2 mit soft schaltendem High Power IGBT4 und Emitter Controlled Diode4 PrimePACK™2 with soft switching High Power IGBT4 and Emitter Controlled Diode4 IGBT-Chopper / IGBT-chopper |
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FD600R12IP4D FD600R12IP4D | |
FF600R12IP4
Abstract: gfp 840 k1221
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FF600R12IP4 FF600R12IP4 gfp 840 k1221 | |
FD900R12IP4DContextual Info: Technische Information / technical information FD900R12IP4D IGBT-Module IGBT-modules PrimePACK 2 mit soft schaltendem High Power IGBT4 und Emitter Controlled Diode4 PrimePACK™2 with soft switching High Power IGBT4 and Emitter Controlled Diode4 IGBT-Chopper / IGBT-chopper |
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FD900R12IP4D FD900R12IP4D | |
KL3 y6Contextual Info: Technische Information / technical information DF1400R12IP4D IGBT-Module IGBT-modules PrimePACK 3 mit soft schaltendem High Power IGBT4 und Emitter Controlled Diode4 PrimePACK™3 with soft switching High Power IGBT4 and Emitter Controlled Diode4 IGBT-Chopper / IGBT-chopper |
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DF1400R12IP4D KL3 y6 | |
Contextual Info: Technische Information / technical information FF900R12IP4 IGBT-Module IGBT-modules PrimePACK 2 mit soft schaltendem High Power IGBT4 und Emitter Controlled Diode4 PrimePACK™2 with soft switching High Power IGBT4 and Emitter Controlled Diode4 IGBT-Wechselrichter / IGBT-inverter |
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FF900R12IP4 | |
Contextual Info: Technische Information / technical information FF900R12IP4D IGBT-Module IGBT-modules PrimePACK 2 mit soft schaltendem High Power IGBT4 und Emitter Controlled Diode4 PrimePACK™2 with soft switching High Power IGBT4 and Emitter Controlled Diode4 IGBT-Wechselrichter / IGBT-inverter |
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FF900R12IP4D | |
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eupec igbt
Abstract: MA110 2ED30C17 ECONOPACK IGBT EUPEC eupec igbt driver sixpack eupec igbt Eupec Power Semiconductors pwm igbt dc-dc converter FF600R17KF6B2
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D-59581 2ED30C17. 0V/15mA MA110 FF600R17KF6B2 eupec igbt 2ED30C17 ECONOPACK IGBT EUPEC eupec igbt driver sixpack eupec igbt Eupec Power Semiconductors pwm igbt dc-dc converter FF600R17KF6B2 | |
APT40GP60B
Abstract: T0-247 40A33 40gp60b2 40gp60b
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APT40GP60B O-247 APT40GP60B T0-247 40A33 40gp60b2 40gp60b | |
A2149Contextual Info: APT75GP120J 1200V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT75GP120J A2149 | |
Contextual Info: APT75GP120J 1200V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT75GP120J | |
APT40GP60B
Abstract: T0-247
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APT40GP60B O-247 APT40GP60B T0-247 | |
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-13012 R0 P1/10 MBN800E33D-AX Silicon N-channel IGBT 3300V D version FEATURES High speed low loss IGBT. Low-injection punch-through IGBT. Low driving power due to low input capacitance MOS gate. High speed low recovery loss diode. |
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IGBT-SP-13012 P1/10 MBN800E33D-AX 000cycles) | |
UJ 45A diodeContextual Info: APT45GP120JDF2 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT45GP120JDF2 APT45 UJ 45A diode | |
Contextual Info: APT80GP60JDF3 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT80GP60JDF3 | |
Contextual Info: APT80GP60JDF3 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT80GP60JDF3 | |
APT80GP60JD3Contextual Info: APT80GP60J 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT80GP60J APT80GP60JD3 |