IGBT FOR HIGH POWER INDUCTION HEATING Search Results

RJH1CF5RDPQ-80

Contextual Info: Preliminary Datasheet RJH1CF5RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0355EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating

rjh1cf7

Abstract: single and gate ic number RJH1CF7RDPQ-80 RJH1CF7RDPQ-80#T2
Contextual Info: Preliminary Datasheet RJH1CF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0357EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating

Silicon N Channel IGBT High Speed Power Switching

Abstract: RJH1CF4RDPQ-80
Contextual Info: Preliminary Datasheet RJH1CF4RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0354EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating

Contextual Info: Preliminary Datasheet RJH1CF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0356EJ0100 Rev.1.00 May 12, 2010 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating

Contextual Info: Preliminary Datasheet RJH1CF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0356EJ0100 Rev.1.00 May 12, 2010 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating

rjh1cf7

Contextual Info: Preliminary Datasheet RJH1CF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0357EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating

TF-600

Contextual Info: Preliminary Datasheet RJH1DF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0413EJ0100 Rev.1.00 May 18, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating

rjh1bf7

Contextual Info: Preliminary Datasheet RJH1BF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0394EJ0100 Rev.1.00 May 16, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating

rjh1bf7

Contextual Info: Preliminary Datasheet RJH1BF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0394EJ0100 Rev.1.00 May 16, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating

Contextual Info: Preliminary Datasheet RJH1DF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0413EJ0100 Rev.1.00 May 18, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating

Contextual Info: Preliminary Datasheet RJH1CF4RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0354EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating

Contextual Info: Preliminary Datasheet RJH1BF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0393EJ0100 Rev.1.00 May 16, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating

rjh1cf5

Abstract: RJH1CF5RDPQ-80
Contextual Info: Preliminary Datasheet RJH1CF5RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0355EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating

Contextual Info: Preliminary Datasheet RJH1BF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0393EJ0100 Rev.1.00 May 16, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating

WESTINGHOUSE scr

Abstract: Westinghouse thyristor POW-R-BRIK WESTINGHOUSE scr fast dc to ac inverter by scr
Contextual Info: Power Semiconductor Solutions EXPERTISE INNOVATION RELIABILITY Powerex Quick Reference Guide Assemblies Air Cooled / Liquid Cooled / Integrated Power Structures POWER SEMICONDUCTOR SOLUTIONS Applications Include: • Battery Chargers  Induction Heating/Melting

block diagram induction heating

Abstract: igbt for HIGH POWER induction heating induction heating ic induction heating igbt MOSFET 40A 600V diagram induction cooker igbt for induction heating induction heating induction cooker circuit diagram IKW40N60H3
Contextual Info: Product Brief Highest performance, efficiency and reliability in Gate Driver ICs & IGBTs for Induction Heating Cooktops Being the market leader in IGBTs, Infineon offers a comprehensive, high performance portfolio of 600V discrete IGBTs for resonant-switching applications

FGL40N120

Abstract: FGL40N120ANTU FAIRCHILD FGL40N120AN
Contextual Info: IGBT FGL40N120AN 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating IH , motor

SGL40N150

Contextual Info: SGL40N150 General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150 is designed for induction heating applications. • High speed switching • Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A

FGL40N120AND

Contextual Info: FGL40N120AND 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction heating IH ,

Contextual Info: SGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A

FGA15N120

Abstract: FGA15N120AND FGA15N120ANDTU igbt control circuit for induction heating "induction heating" circuit FGA15N120ANDT
Contextual Info: FGA15N120AND General Description Features Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers solutions for applications such as induction heating IH , motor control, general purpose

IGBT 60A 1700v

Abstract: FGL60N170D FGL60N170DTU transistor fgl60n170d
Contextual Info: IGBT FGL60N170D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. FGL60N170D is designed for the Induction Heating applications. • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A

FGL40N150DTU

Contextual Info: FGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A

BSC 27 flyback

Abstract: induction heating circuits IXEH40N120B2D4 igbt for induction heating igbt for induction heating ic
Contextual Info: IXEH 40N120B2D4 Advanced Technical Information IC25 = 65 A = 1200 V VCES VCE sat typ = 2.4 V SPT IGBT High Frequency Applications: • induction heating • flyback converters • resonant-mode power supplies C TO-247 AD G E G C E C (TAB) Features IGBT Conditions