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    IGBT DISPLAY PLASMA Search Results

    IGBT DISPLAY PLASMA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT50J123
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 59 A, TO-3P(N) Datasheet
    GT30J122A
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Datasheet
    GT20J121
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 20 A, TO-220SIS Datasheet
    GT30J121
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Datasheet
    GT20J341
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS Datasheet

    IGBT DISPLAY PLASMA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2pg001

    Abstract: 2PG001+equivalent
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Features  Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V


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    2002/95/EC) 2PG001 O-220F-A1 2PG001 2PG001+equivalent PDF

    2PG003

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG003 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Features  Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V


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    2002/95/EC) 2PG003 O-220F-A1 2PG003 PDF

    2PG002

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Features  Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V


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    2002/95/EC) 2PG002 O-220F-A1 2PG002 PDF

    IGBT 2pg011

    Abstract: 2PG011
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)


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    2002/95/EC) 2PG011 O-220D-A1 IGBT 2pg011 2PG011 PDF

    2pg001

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Code TO-220F-A1


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    2002/95/EC) 2PG001 O-220F-A1 2pg001 PDF

    2pg003

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG003 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Code TO-220F-A1


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    2002/95/EC) 2PG003 O-220F-A1 2pg003 PDF

    2PG006

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings TC = 25°C


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    2002/95/EC) 2PG006 O-220D-A1 2PG006 PDF

    2PG002

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Code TO-220F-A1


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    2002/95/EC) 2PG002 O-220F-A1 2PG002 PDF

    IXGQ90N33

    Abstract: 90n33 IXGQ90N33TCD IXGQ90N33TCD4 90N33T g90n33tc 90N33TC IXgq90n IXGQ90 TO-3P package
    Contextual Info: Preliminary Technical Information Plasma Display Power IGBT IXGQ90N33TCD4 Trench Gate High Speed Symbol Test Conditions VCES TJ = 25°C to 150°C 330 V ±30 V 90 A IC25 TC = 25°C, IGBT chip capability ICP TJ ≤ 150°C, tp ≤ 1 s 360 A IDP TJ ≤ 150°C, tp ≤ 1μs


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    IXGQ90N33TCD4 90N33TC 5-30-07-C IXGQ90N33 90n33 IXGQ90N33TCD IXGQ90N33TCD4 90N33T g90n33tc IXgq90n IXGQ90 TO-3P package PDF

    Contextual Info: Advance Technical Information PolarTM IGBT DIE IXGD160N30PC-66 VCES = 300 V For Plasma Display Applications Die Outline Notes: 1. Wafer Diameter: 150 mm 2. Width of all Scribe Streets: 100 µm 3. Die Thickness: 200 ± 20 µm 4. Die Size Tolerance: ± 50 µm


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    IXGD160N30PC-66 22-A114-B A0011. PDF

    Contextual Info: TLP155 Photocouplers GaAℓAs Infrared LED & Photo IC TLP155 1. Applications • Plasma Display Panels PDPs • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers 2. General The Toshiba TLP155 consists of a GaAℓAs infrared light-emitting diodes and integrated high gain, high-speed


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    TLP155 TLP155 PDF

    Contextual Info: TLP155 Photocouplers GaA As Infrared LED & Photo IC TLP155 1. Applications • Plasma Display Panels PDPs • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers 2. General The Toshiba TLP155 consists of a GaA As infrared light-emitting diodes and integrated high gain, high-speed


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    TLP155 TLP155 PDF

    TLP152

    Abstract: 11-4L1S mosfet v65
    Contextual Info: TLP152 Photocouplers GaAℓAs Infrared LED & Photo IC TLP152 1. Applications • Plasma Display Panels PDPs • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers 2. General The TLP152 is a photocoupler in a SO6 package that consists of a GaAℓAs infrared light-emitting diode(LED)


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    TLP152 TLP152 11-4L1S mosfet v65 PDF

    11-4L1S

    Contextual Info: TLP152 Photocouplers GaA As Infrared LED & Photo IC TLP152 1. Applications • Plasma Display Panels PDPs • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers 2. General The TLP152 is a photocoupler in a SO6 package that consists of a GaA As infrared light-emitting diode(LED)


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    TLP152 TLP152 11-4L1S PDF

    Contextual Info: PDP SPMTM FVP18030IM3LSG1 Sustain Features General Description • Use of high speed 300V IGBTs with parallel FRDs • Single-grounded power supply bymeans of built-in HVIC It is an advanced samart power module SPMTM that Fairchild has newly developed and designed to provide very compact


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    FVP18030IM3LSG1 FVP18030IM3LSG1 PDF

    Contextual Info: PDP SPMTM FVP12030IM3LEG1 Energy Recovery Feature General Description • Use of high speed 300V IGBTs with parallel FRDs • Single-grounded power supply bymeans of built-in HVIC It is an advanced smart power module SPMTM that Fairchild has newly developed and designed to provide very compact


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    FVP12030IM3LEG1 FVP12030IM3LEG1 PDF

    GT30J124

    Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
    Contextual Info: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.


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    BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123 PDF

    GT45F122

    Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
    Contextual Info: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


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    BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124 PDF

    2PG011

    Abstract: 2pg009 2PG006 IGBT 2pg011 igbt display plasma TO-220D-A1 220d
    Contextual Info: Fast switching 175 ns and low VCE(sat) (2.4 V) PDP Drive IGBT Devices: 2PG00X Series „ Overview The 2PG00X series are PDP drive IGBT devices that respond to the needs for fast switching and low loss characteristics associated with the increasing image quality and lower power of PDP displays. These


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    2PG00X O-220D O-220D-A1 2PG006 2PG009 2PG011 O-220D-A1 2PG011 IGBT 2pg011 igbt display plasma TO-220D-A1 220d PDF

    nec optocoupler

    Abstract: igbt display plasma optocouplers 3030 optocoupler 4-pin dip open collector transistor NEC 2500 PS9301 DIP4 gull wing SSOP12 NEC K 2500 PS8551
    Contextual Info: N E C E l ec t r o n i c s O P TO C O U P L E RS — 2 0 0 8 California Eastern Laboratories is the exclusive sales and marketing partner for the products made by the Compound Semiconductor Devices Division of NEC Electronics Corporation CSDD . These include


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    transistors984-6720 CL-610B nec optocoupler igbt display plasma optocouplers 3030 optocoupler 4-pin dip open collector transistor NEC 2500 PS9301 DIP4 gull wing SSOP12 NEC K 2500 PS8551 PDF

    2PG001

    Abstract: Panasonic IGBT TO220 2PG002 2PG003
    Contextual Info: Fast switching 150 ns and low VCE(sat) (2.4 V) PDP Drive IGBT Devices: 2PG00X Series „ Overview The 2PG00X series are PDP drive IGBT devices that respond to the needs for fast switching and low loss characteristics associated with the increasing image quality and lower power of PDP displays. These


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    2PG00X 2PG001ã 2PG002/2PG003ã 150ns 2PG002ã 190ns 2PG001 Panasonic IGBT TO220 2PG002 2PG003 PDF

    Contextual Info: Issue Number | 001 June 2011 New Product Announcement ZXGD3006E6 High current 40V Gate Driver reduces IGBT switching losses Diodes Incorporated has extended its family of dedicated Gate Drivers for the switching of IGBTs and MOSFETs in, solar inverters, power supplies


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    ZXGD3006E6 ZXGD3006E6 upto10 PDF

    igbt pdp pulse module ic

    Abstract: FVP18030IM3LSG1 buffer ic igbt display plasma
    Contextual Info: PDP SPMTM FVP18030IM3LSG1 Sustain Features General Description • Use of high speed 300V IGBTs with parallel FRDs It is an advanced samart power module SPMTM that Fairchild has newly developed and designed to provide very compact and optimized performance for the sustaining circuit of PDP


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    FVP18030IM3LSG1 FVP18030IM3LSG1 igbt pdp pulse module ic buffer ic igbt display plasma PDF

    igbt display plasma

    Abstract: FVP12030IM3LEG1 igbt pdp pulse module ic
    Contextual Info: PDP SPMTM FVP12030IM3LEG1 Energy Recovery Feature General Description • Use of high speed 300V IGBTs with parallel FRDs It is an advanced smart power module SPMTM that Fairchild has newly developed and designed to provide very compact and optimized performance for the energy recovery circuit of


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    FVP12030IM3LEG1 FVP12030IM3LEG1 igbt display plasma igbt pdp pulse module ic PDF