IGBT DISPLAY PLASMA Search Results

2pg001

Abstract: 2PG001+equivalent
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Features  Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V

2PG003

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG003 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Features  Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V

2PG002

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Features  Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V

IXGA9289

Abstract: igbt display plasma TO-3P weight IXGA120N30TC ixga120n30
Contextual Info: Advanced Technical Information Trench IGBT IXGA9289 = 300 V VCES IC25 = 120 A VCE sat (typ) = 1.4 V For Plasma Display Applications (Development type IXGA_120N30TC) TO-263 (IXGA) Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings VGEM IC25 TC = 25°C, IGBT chip capability

2pg001

Abstract: 2pg001 datasheet 2PG001 IGBT 2PG001 equivalent
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High speed hall time: tf = 250 nsec(typ.)

2PG009

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)

2PG009

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)

2pg002

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High speed hall time: tf = 190 nsec(typ.)

IGBT 2pg011

Abstract: 2PG011
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)

2pg003

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG003 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High speed hall time: tf = 200 nsec(typ.)

2PG011

Abstract: IGBT 2pg011 2pg0 2 SJN00008AED 2pg011pcta
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)

2PG006

Abstract: SJN00006AED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High-speed switching: tf = 175 ns (typ.)

2PG006

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High-speed switching: tf = 175 ns (typ.)

2PG011

Abstract: IGBT 2pg011 SJN00008AED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)

2pg001

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Code TO-220F-A1 

2pg003

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG003 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Code TO-220F-A1 

2PG006

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings TC = 25°C

2PG002

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Code TO-220F-A1 

IXGQ90N33

Abstract: 90n33 IXGQ90N33TCD IXGQ90N33TCD4 90N33T g90n33tc 90N33TC IXgq90n IXGQ90 TO-3P package
Contextual Info: Preliminary Technical Information Plasma Display Power IGBT IXGQ90N33TCD4 Trench Gate High Speed Symbol Test Conditions VCES TJ = 25°C to 150°C 330 V ±30 V 90 A IC25 TC = 25°C, IGBT chip capability ICP TJ ≤ 150°C, tp ≤ 1 s 360 A IDP TJ ≤ 150°C, tp ≤ 1μs

Contextual Info: Advance Technical Information PolarTM IGBT DIE IXGD160N30PC-66 VCES = 300 V For Plasma Display Applications Die Outline Notes: 1. Wafer Diameter: 150 mm 2. Width of all Scribe Streets: 100 µm 3. Die Thickness: 200 ± 20 µm 4. Die Size Tolerance: ± 50 µm

Contextual Info: TLP155 Photocouplers GaAℓAs Infrared LED & Photo IC TLP155 1. Applications • Plasma Display Panels PDPs • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers 2. General The Toshiba TLP155 consists of a GaAℓAs infrared light-emitting diodes and integrated high gain, high-speed

Contextual Info: TLP155 Photocouplers GaA As Infrared LED & Photo IC TLP155 1. Applications • Plasma Display Panels PDPs • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers 2. General The Toshiba TLP155 consists of a GaA As infrared light-emitting diodes and integrated high gain, high-speed

Power MOS FET Gate Drive

Abstract: inverter plasma
Contextual Info: TLP705F TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP705F Plasma Display Panel Industrial Inverter IGBT/Power MOS FET Gate Drive Unit in mm 4.58±0.25 1.27±0.2 Peak output current : ±0.45 A max • Operating frequency : 250kHz (max) • Guaranteed performance over temperature : −40 to 100°C

TLP705F

Abstract: E67349 EN60747-5-2 TLP705 igbt display plasma
Contextual Info: TLP705F TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP705F Plasma Display Panel Industrial Inverter IGBT/Power MOSFET Gate Drive Unit in mm 4.58±0.25 1.27±0.2 Peak output current : ±0.45 A max • Operating frequency : 250kHz (max) • Guaranteed performance over temperature : −40 to 100°C