IGBT DISPLAY PLASMA Search Results

2pg001

Abstract: 2PG001+equivalent
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Features  Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V

IGBT 2pg011

Abstract: 2PG011
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)

2PG002

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Code TO-220F-A1 

Contextual Info: Advance Technical Information PolarTM IGBT DIE IXGD160N30PC-66 VCES = 300 V For Plasma Display Applications Die Outline Notes: 1. Wafer Diameter: 150 mm 2. Width of all Scribe Streets: 100 µm 3. Die Thickness: 200 ± 20 µm 4. Die Size Tolerance: ± 50 µm

TLP152

Abstract: 11-4L1S mosfet v65
Contextual Info: TLP152 Photocouplers GaAℓAs Infrared LED & Photo IC TLP152 1. Applications • Plasma Display Panels PDPs • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers 2. General The TLP152 is a photocoupler in a SO6 package that consists of a GaAℓAs infrared light-emitting diode(LED)

tlp155e

Abstract: so6 package
Contextual Info: TLP155E TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP155E Plasma Display Panel PDP Industrial Inverter MOS FET / IGBT Gate Driver Unit: mm 5 4 4.55 +0.25 -0.15 6 The Toshiba TLP155E consists of GaAℓAs infrared light emitting diodes and integrated high gain, high-speed photodetectors. The TLP155E is housed in

Contextual Info: PDP SPMTM FVP18030IM3LSG1 Sustain Features General Description • Use of high speed 300V IGBTs with parallel FRDs • Single-grounded power supply bymeans of built-in HVIC It is an advanced samart power module SPMTM that Fairchild has newly developed and designed to provide very compact

Contextual Info: PDP SPMTM FVP12030IM3LEG1 Energy Recovery Feature General Description • Use of high speed 300V IGBTs with parallel FRDs • Single-grounded power supply bymeans of built-in HVIC It is an advanced smart power module SPMTM that Fairchild has newly developed and designed to provide very compact

GT30J124

Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Contextual Info: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.

GT45F122

Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Contextual Info: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor

2PG011

Abstract: 2pg009 2PG006 IGBT 2pg011 igbt display plasma TO-220D-A1 220d
Contextual Info: Fast switching 175 ns and low VCE(sat) (2.4 V) PDP Drive IGBT Devices: 2PG00X Series „ Overview The 2PG00X series are PDP drive IGBT devices that respond to the needs for fast switching and low loss characteristics associated with the increasing image quality and lower power of PDP displays. These

nec optocoupler

Abstract: igbt display plasma optocouplers 3030 optocoupler 4-pin dip open collector transistor NEC 2500 PS9301 DIP4 gull wing SSOP12 NEC K 2500 PS8551
Contextual Info: N E C E l ec t r o n i c s O P TO C O U P L E RS — 2 0 0 8 California Eastern Laboratories is the exclusive sales and marketing partner for the products made by the Compound Semiconductor Devices Division of NEC Electronics Corporation CSDD . These include

2PG001

Abstract: Panasonic IGBT TO220 2PG002 2PG003
Contextual Info: Fast switching 150 ns and low VCE(sat) (2.4 V) PDP Drive IGBT Devices: 2PG00X Series „ Overview The 2PG00X series are PDP drive IGBT devices that respond to the needs for fast switching and low loss characteristics associated with the increasing image quality and lower power of PDP displays. These

Contextual Info: Issue Number | 001 June 2011 New Product Announcement ZXGD3006E6 High current 40V Gate Driver reduces IGBT switching losses Diodes Incorporated has extended its family of dedicated Gate Drivers for the switching of IGBTs and MOSFETs in, solar inverters, power supplies

igbt display plasma

Abstract: FVP12030IM3LEG1 igbt pdp pulse module ic
Contextual Info: PDP SPMTM FVP12030IM3LEG1 Energy Recovery Feature General Description • Use of high speed 300V IGBTs with parallel FRDs It is an advanced smart power module SPMTM that Fairchild has newly developed and designed to provide very compact and optimized performance for the energy recovery circuit of

irgp4086

Abstract: IRGP4086PBF igbt display plasma IRFPE30
Contextual Info: PD - 97132 IRGP4086PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM l Low VCE on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability

Contextual Info: FOD3184 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Features Applications • High noise immunity characterized by 50kV/µs Typ. ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ common mode rejection @ VCM = 2,000V Guaranteed operating temperature range of

igbt 300V 70A

Abstract: IRGS4086PBF AN-994
Contextual Info: PD - 96222 IRGB4086PbF IRGS4086PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM l Low VCE on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability

irg6b330udpbf

Contextual Info: PD - 96304 IRG6B330UDPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM l Low VCE on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability

L200H

Abstract: 6 pulse IGBT single line drawing
Contextual Info: PD - 96409 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability

IRGP4085

Contextual Info: PD - 97286 IRGP4085DPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM l Low VCE on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability

Contextual Info: PD - 97222 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability

IRGP4055DPBF

Abstract: igbt display plasma TO-247AC Package igbt
Contextual Info: PD - 97222 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability

tc 97101

Abstract: igbt display plasma IRFPE30 IRGP4065DPBF
Contextual Info: PD - 97101 IRGP4065DPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM l Low VCE on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability