IGBT APTGT50H60T1G Search Results

IGBT APTGT50H60T1G Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
GT50J123		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 59 A, TO-3P(N)	Datasheet
GT30J122A		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT20J121		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, TO-220SIS	Datasheet
GT30J121		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT20J341		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS	Datasheet

IGBT APTGT50H60T1G Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: APTGT50H60T1G Full - Bridge Trench + Field Stop IGBT Power Module 3 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 4 Q3 Q1 VCES = 600V IC = 50A* @ Tc = 80°C CR1 CR3 2 5 6 1 Q4 Q2	Original	APTGT50H60T1G	PDF
APT0406 Abstract: APT0502 igbt APTGT50H60T1G Contextual Info: APTGT50H60T1G Full - Bridge Trench + Field Stop IGBT Power Module 3 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 4 Q3 Q1 CR1 CR3 2 5 6 1 Q4 Q2 CR2 CR4 7 9 8 11 10 NTC VCES = 600V	Original	APTGT50H60T1G APT0406 APT0502 igbt APTGT50H60T1G	PDF
Contextual Info: APTGT50H60T1G Full - Bridge Trench + Field Stop IGBT3 Power Module 3 Application • Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies  Motor control 4 Q3 Q1 CR1 CR3 2 5 6 1 Q4 Q2 CR2 CR4 7 9 8 11 10 NTC VCES = 600V	Original	APTGT50H60T1G	PDF
smps 1000W Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit Contextual Info: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain	Original	des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit	PDF
SP6-P Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.	Original	10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter	PDF
VRF2933FL Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301 Contextual Info: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system	Original	MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301	PDF