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    IGBT 900V Search Results

    IGBT 900V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT50J123
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 59 A, TO-3P(N) Datasheet
    GT30J122A
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Datasheet
    GT20J121
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 20 A, TO-220SIS Datasheet
    GT30J121
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Datasheet
    GT20J341
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS Datasheet

    IGBT 900V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IGBT FF 300

    Abstract: diode 1700v eupec igbt FF400R17KF6CB2 KF6C
    Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


    Original     		PDF

    FF400R17KF6CB2

    Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


    Original     		PDF

    FZ800R17KF6CB2

    Abstract: KF6C
    Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


    Original     		PDF

    FF400R17KF6CB2

    Abstract: IGBT FF 300 igbt ff 75 r
    Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


    Original     		FF400R17KF6CB2 FF400R17KF6CB2 IGBT FF 300 igbt ff 75 r PDF

    FF400R17KF6CB2

    Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


    Original     		PDF

    eupec igbt

    Abstract: IGBT FZ 1800 FZ800R17KF6CB2 IGBT module FZ 1200 IGBT FZ 800
    Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


    Original     		PDF

    IGBT module FZ 1200

    Abstract: KF6C FZ800R17KF6CB2
    Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


    Original     		FZ800R17KF6CB2 IGBT module FZ 1200 KF6C FZ800R17KF6CB2 PDF

    diode 1700v

    Abstract: FZ800R17KF6CB2
    Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


    Original     		PDF

    APT43GA90B

    Abstract: MIC4452
    Contextual Info: APT43GA90B 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT43GA90B APT43GA90B MIC4452 PDF

    Contextual Info: APT80GA90LD40 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT80GA90LD40 APT80GA90LD40 O-264 PDF

    IGBT 900v

    Abstract: IGBT microsemi APT27GA90K gate DRIVER IGBT MIC4452
    Contextual Info: APT27GA90K 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT27GA90K O-220 shift126) IGBT 900v IGBT microsemi APT27GA90K gate DRIVER IGBT MIC4452 PDF

    Contextual Info: APT50GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		APT50GP90B O-247 APT50GP90B T0-247 PDF

    APT15GP90BDF1

    Abstract: APT15GP90K
    Contextual Info: APT15GP90K 900V POWER MOS 7 IGBT TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		APT15GP90K O-220 APT15GP90BDF1 APT15GP90K PDF

    APT25GP90BDF1

    Abstract: T0-247 T0247 package NF 833
    Contextual Info: APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		APT25GP90BDF1 O-247 APT25GP90BDF1 T0-247 T0247 package NF 833 PDF

    Contextual Info: APT50GP90B2DF2 900V POWER MOS 7 IGBT T-MaxTM ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		APT50GP90B2DF2 APT50GP90B2DF2 PDF

    APT15GP90BDF1

    Abstract: T0-247
    Contextual Info: APT15GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		APT15GP90BDF1 O-247 APT15GP90BDF1 T0-247 PDF

    600V 25A Ultrafast Diode APT

    Abstract: T0247 package NF 833 APT25GP90B T0-247 T0247
    Contextual Info: APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		APT25GP90B O-247 600V 25A Ultrafast Diode APT T0247 package NF 833 APT25GP90B T0-247 T0247 PDF

    APT10035LLL

    Abstract: APT80GA90LD40 MIC4452
    Contextual Info: APT80GA90LD40 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT80GA90LD40 APT10035LLL APT80GA90LD40 MIC4452 PDF

    APT27GA90K

    Abstract: MIC4452
    Contextual Info: APT27GA90K 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT27GA90K O-220 shift126) APT27GA90K MIC4452 PDF

    APT15GP90B

    Abstract: T0-247
    Contextual Info: APT15GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		APT15GP90B O-247 APT15GP90B T0-247 PDF

    diode schottky 600v

    Abstract: phase shift resistance welding APT43GA90B MIC4452 .47 j 100
    Contextual Info: APT43GA90B 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT43GA90B diode schottky 600v phase shift resistance welding APT43GA90B MIC4452 .47 j 100 PDF

    Contextual Info: APT27GA90K 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT27GA90K O-220 PDF

    APT43GA90B

    Abstract: APT43GA90S MIC4452 117 IC 100-C43
    Contextual Info: APT43GA90B APT43GA90S 900V High Speed PT IGBT B POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT43GA90B APT43GA90S APT43GA90B APT43GA90S MIC4452 117 IC 100-C43 PDF

    Contextual Info: APT80GA90LD40 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT80GA90LD40 O-264 PDF