IGBT 900V Search Results
IGBT 900V Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| GT50J123 |
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IGBT, 600 V, 59 A, TO-3P(N) | Datasheet | ||
| GT20J121 |
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IGBT, 600 V, 20 A, TO-220SIS | Datasheet | ||
| GT30J121 |
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IGBT, 600 V, 30 A, TO-3P(N) | Datasheet | ||
| GT30J122A |
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IGBT, 600 V, 30 A, TO-3P(N) | Datasheet | ||
| GT20N135SRA |
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IGBT, 1350 V, 40 A, Built-in Diodes, TO-247 | Datasheet |
IGBT 900V Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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IGBT FF 300
Abstract: diode 1700v eupec igbt FF400R17KF6CB2 KF6C
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FF400R17KF6CB2Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values |
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FF400R17KF6CB2
Abstract: IGBT FF 300 igbt ff 75 r
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FF400R17KF6CB2 FF400R17KF6CB2 IGBT FF 300 igbt ff 75 r | |
FF400R17KF6CB2Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values |
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eupec igbt
Abstract: IGBT FZ 1800 FZ800R17KF6CB2 IGBT module FZ 1200 IGBT FZ 800
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IGBT module FZ 1200
Abstract: KF6C FZ800R17KF6CB2
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FZ800R17KF6CB2 IGBT module FZ 1200 KF6C FZ800R17KF6CB2 | |
diode 1700v
Abstract: FZ800R17KF6CB2
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APT43GA90B
Abstract: MIC4452
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APT43GA90B APT43GA90B MIC4452 | |
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Contextual Info: APT50GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT50GP90B O-247 APT50GP90B T0-247 | |
APT15GP90BDF1
Abstract: APT15GP90K
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APT15GP90K O-220 APT15GP90BDF1 APT15GP90K | |
APT25GP90BDF1
Abstract: T0-247 T0247 package NF 833
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APT25GP90BDF1 O-247 APT25GP90BDF1 T0-247 T0247 package NF 833 | |
Fast Recovery Bridge Rectifier, 60A, 600V
Abstract: APT10035LLL APT64GA90LD30 MIC4452
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APT64GA90LD30 shifte106) Fast Recovery Bridge Rectifier, 60A, 600V APT10035LLL APT64GA90LD30 MIC4452 | |
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Contextual Info: APT50GP90B2DF2 900V POWER MOS 7 IGBT T-MaxTM ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT50GP90B2DF2 APT50GP90B2DF2 | |
APT10035LLL
Abstract: APT80GA90LD40 MIC4452
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APT80GA90LD40 APT10035LLL APT80GA90LD40 MIC4452 | |
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Contextual Info: APT80GA90LD40 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low |
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APT80GA90LD40 O-264 | |
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Contextual Info: APT50GP90JDF2 900V POWER MOS 7 IGBT E E ® G The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT50GP90JDF2 APT50GP90JDF2 | |
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Contextual Info: APT27GA90K 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low |
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APT27GA90K O-220 | |
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Contextual Info: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT25GP90B O-247 | |
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Contextual Info: APT15GP90K APT15GP90K TYPICAL PERFORMANCE CURVES 900V POWER MOS 7 IGBT TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT15GP90K O-220 APT15GP90 | |
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Contextual Info: APT15GP90B TYPICAL PERFORMANCE CURVES APT15GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT15GP90B O-247 APT15GP4 | |
APT15GP90BDF1
Abstract: T0247 package
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APT15GP90BDF1 O-247 APT15GP90BDF1 T0247 package | |
228F
Abstract: APT40GP90B2DF2
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APT40GP90B2DF2 228F APT40GP90B2DF2 | |
APT25GP90BDF1Contextual Info: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT25GP90BDF1 O-247 APT25GP90BDF1 | |
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Contextual Info: TYPICAL PERFORMANCE CURVES APT25GP90B APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT25GP90B O-247 | |