IGBT 75 D Search Results

Contextual Info: IGBT IGBT + SOFT RECOVERY/ULTRA FAST A.P. RECTIFIER PACKAGE TO-254 TO-258 DEVICE TYPE BVCES VOLTS SNGD20620 600 SNGD20620A tf * l rr * 1 Reverse Diode nsec VCE (sat) VOLTS nsec 20 2.6 570 130 75 600 20 3.1 310 130 75 SNGD20640 600 40 2.0 800 150 125 SNGD20648A

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 75 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 75 GB 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

bsm 50 gd 120 dlc

Abstract: k 246 transistor Eupec BSM Eupec Power Semiconductors 600v bsm IC-95 BSM 225
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 75 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

Eupec BSM

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 75 GB 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

Contextual Info: VDI 75-12P1 VII 75-12P1 VID 75-12P1 VIO 75-12P1 IC25 = 92 A = 1200 V VCES VCE sat typ. = 2.7 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 X15 F1 NTC Pin arangement see outlines Features Symbol Conditions

Contextual Info: VDI 75-06P1 VII 75-06P1 VID 75-06P1 VIO 75-06P1 IC25 = 69 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 X15 F1 NTC Pin arangement see outlines Features Symbol Conditions

igbt module

Abstract: SII75N06 inverter ls 600
Contextual Info: SII75N06 NPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions IGBT Wechselrichter/ IGBT Inverter VCES IC TC= 25(75)oC ICRM TC= 75oC, tP =1ms Ptot TC= 25oC, Tvj= 150oC VGES Diode Wechselrichter/ Diode Inverter

PS18

Abstract: SV18
Contextual Info: VDI 75-12P1 VII 75-12P1 VID 75-12P1 VIO 75-12P1 IC25 = 92 A = 1200 V VCES VCE sat typ. = 2.7 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 NTC X16 T16 NTC IK10 X16 AC1 F1 Pin arangement see outlines Features

7506P

Abstract: PS18 SV18 TF010 diode 407
Contextual Info: VDI 75-06P1 VII 75-06P1 VID 75-06P1 VIO 75-06P1 IC25 = 69 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 SV18 NTC X16 T16 NTC X16 IK10 F1 Pin arangement see outlines Features

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 75 GB 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 75 GB 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 75 GD 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

Contextual Info: SK 75 GD 066 T power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter 2* * *

Contextual Info: Advance Technical Information IGBT with Diode Low Saturation Voltage IGBT with Low Forward Drop Diode Electrically Isolated Mounting Tab IXGR 50N60A2U1 VCES IC25 VCE sat = 600 V = 75 A = 1.7 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings

VS-GB75DA120UP

Contextual Info: Not Available for New Designs, Use VS-GB90DA120U VS-GB75DA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy

"IGBT h-bridge"

Abstract: h-bridge ic amp h-bridge gate drive ic QIB0607002 RG83 igbt h bridge application what is fast IGBT transistor 7272 300 amp igbt ups
Contextual Info: Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 724 925-7272 QIB0607002 H-BRIDGE 75 Amp/600 Volts Description: Powerex IGBT H-Bridge Module is designed especially for customer applications. Each module consists of four IGBT Transistors in an

A7 DIODE

Abstract: diode a7 75-06A7T
Contextual Info: MWI 75-06 A7 MWI 75-06 A7 T IC25 = 90 A = 600 V VCES VCE sat typ. = 2.1 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 1 2 Preliminary Data Type NTC - Option MWI 75-06 A7 MWI 75-06 A7T without NTC with NTC 5 6 9 10 T NTC 16 15 14 3 4

LS183

Abstract: XLS-10 75GB124D
Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/75 °C Tcase = 25/75 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 100 / 75

Contextual Info: FGY75N60SMD 600 V, 75 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications

NTC resistor T5

Abstract: MKI 75-06 A7
Contextual Info: MKI 75-06 A7 MKI 75-06 A7T IC25 = 90 A VCES = 600 V VCE sat typ.= 2.1 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Type: 13 NTC - Option: MKI 75-06 A7 MKI 75-06 A7T T1 without NTC with NTC T T5 D1 1 9 2 10 D5 16 14 T2 T T6 D2 3 11 4 12

Contextual Info: FU JI 2-Pack IGBT 600 V 75 A 2MBI75N-060 [lILMëüMlE IGBT MODULE N series Outline Drawing • Features • • • • • • Square RBSOA Low Saturation Voltage Less Total Power Dissipation Improved FWD Characteristic M inimized Internal Stray Inductance

Contextual Info: Li IXYS Mil 75-12 A3 MID 75-12 A3 MDI 75-12 A3 IGBT Modules lC25 = 90 A Short Circuit SOA Capability ^ ces ” ^ Square RBSOA ^ C E s a t typ. = Mil MID I Ir 7C ^J 6 0 -+ ^ MDI I 11 l. o1 M : : ^ ^ l iïjÔ jj E 72873 Preliminary data Symbol Conditions

VS-GB75SA120UP

Contextual Info: Not Available for New Designs, Use VS-GB90SA120U VS-GB75SA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • • • • • • • • SOT-227 PRODUCT SUMMARY BENEFITS VCES 1200 V IC DC 75 A at 95 °C