IGBT 600V 12A Search Results

Contextual Info: Advance Technical Information IXXQ30N60B3M XPTTM 600V IGBT GenX3TM VCES = IC110 = VCE sat  tfi(typ) = (Electrically Isolated Tab) 600V 19A 1.85V 125ns Extreme Light Punch Through IGBT for 5-30 kHz Switching OVERMOLDED (IXXQ.M) OUTLINE Symbol

g12n60d1

Abstract: AN7254 AN7260 HGTP12N60D1 G12N60D
Contextual Info: HGTP12N60D1 12A, 600V N-Channel IGBT April 1995 Features Package • 12A, 600V JEDEC TO-220AB • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR FLANGE • Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device

STGF12NB60KD

Abstract: JESD97 STGB12NB60KD STGP12NB60KD
Contextual Info: STGB12NB60KD STGF12NB60KD - STGP12NB60KD N-channel 18A - 600V - TO-220 - TO-220FP - D2PAK Short circuit proof PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C STGB12NB60KD 600V < 2.8V 18A STGF12NB60KD 600V < 2.8V 7A STGP12NB60KD 600V < 2.8V

st 393

Abstract: JESD97 STGB12NB60KD STGP12NB60KD schematic diagram UPS
Contextual Info: STGB12NB60KD STGF12NB60KD - STGP12NB60KD N-channel 18A - 600V - TO-220 - TO-220FP - D2PAK Short circuit proof PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C STGB12NB60KD 600V < 2.8V 18A STGF12NB60KD 600V < 2.8V 7A STGP12NB60KD 600V < 2.8V

30N60B3D

Abstract: IXXH30N60B3 IXXH30N60
Contextual Info: Advance Technical Information IXXH30N60B3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

IXXH30N60B3D1

Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH30N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

30N60C3D

Abstract: 30N60C3D1 IXXH30N60 30N60C3 ixxh30n60c3d1
Contextual Info: Advance Technical Information IXXH30N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 30A 2.2V 32ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

30N60C3D

Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH30N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 30A 2.2V 32ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

30N60B3D

Abstract: 30N60B3 IXXH30N60B3D1
Contextual Info: Advance Technical Information IXXH30N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

Contextual Info: Advance Technical Information IXXH30N60C3 XPTTM 600V IGBT GenX3TM VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 600V 30A 2.2V 32ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

Contextual Info: MITSUBISHI IGBT MODULES CM600HX-12A HIGH POWER SWITCHING USE CM600HX-12A ¡IC . 600A ¡VCES . 600V ¡Single ¡Flatbase Type / Insulated Package /

Contextual Info: MITSUBISHI IGBT MODULES CM100RX-12A HIGH POWER SWITCHING USE CM100RX-12A ¡IC . 100A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake

Contextual Info: MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE CM200RX-12A ¡IC . 200A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake

DIODE EVP 28

Contextual Info: MITSUBISHI IGBT MODULES CM100RX-12A HIGH POWER SWITCHING USE CM100RX-12A ¡IC . 100A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake

Contextual Info: MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE CM200RX-12A ¡IC . 200A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake

cm150rx1

Abstract: CM150RX-12A
Contextual Info: MITSUBISHI IGBT MODULES CM150RX-12A HIGH POWER SWITCHING USE CM150RX-12A ¡IC . 150A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake

CM200RX-12A

Abstract: cm200rx
Contextual Info: MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE CM200RX-12A ¡IC . 200A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake

CM300DX-12A

Abstract: 8e116
Contextual Info: MITSUBISHI IGBT MODULES CM300DX-12A HIGH POWER SWITCHING USE CM300DX-12A ¡IC . 300A ¡VCES . 600V ¡Dual ¡Flatbase Type / Insulated Package /

Contextual Info: MITSUBISHI IGBT MODULES CM300DX-12A HIGH POWER SWITCHING USE CM300DX-12A ¡IC . 300A ¡VCES . 600V ¡Dual ¡Flatbase Type / Insulated Package /

GP19NC60SD

Abstract: JESD97 STGP19NC60SD
Contextual Info: STGP19NC60SD N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT Features Type VCES STGP19NC60SD 600V VCE sat (typ)@150°C IC @100°C < 1.35V 20A • Very low on-voltage drop (VCE(sat) ■ High input impedance (voltage driven) ■ IGBT co-packaged with ultrafast freewheeling

DIODE T25

Contextual Info: MITSUBISHI IGBT MODULES CM100RX-12A HIGH POWER SWITCHING USE CM100RX-12A ¡IC . 100A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake

Contextual Info: MITSUBISHI IGBT MODULES CM400DX-12A HIGH POWER SWITCHING USE CM400DX-12A ¡IC . 400A ¡VCES . 600V ¡Dual ¡Flatbase Type / Insulated Package /

CM400Dx1

Contextual Info: MITSUBISHI IGBT MODULES CM400DX-12A HIGH POWER SWITCHING USE CM400DX-12A ¡IC . 400A ¡VCES . 600V ¡Dual ¡Flatbase Type / Insulated Package /

Contextual Info: MITSUBISHI IGBT MODULES CM150RX-12A HIGH POWER SWITCHING USE CM150RX-12A ¡IC . 150A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake