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    IGBT 5J301 EQUIVALENT IGBT Search Results

    IGBT 5J301 EQUIVALENT IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT50J123
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 59 A, TO-3P(N) Datasheet
    GT30J122A
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Datasheet
    GT20J121
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 20 A, TO-220SIS Datasheet
    GT30J121
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Datasheet
    GT20J341
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS Datasheet

    IGBT 5J301 EQUIVALENT IGBT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2-10R1C

    Abstract: 5J301 GT5J301 Toshiba c
    Contextual Info: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. (IC = 5A) Low saturation voltage


    Original     		GT5J301 2-10R1C 5J301 GT5J301 Toshiba c PDF

    2-10R1C

    Abstract: GT5J301 IGBT 5j301 equivalent IGBT
    Contextual Info: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30 s Max. (IC = 5A) z Low saturation voltage


    Original     		GT5J301 2-10R1C GT5J301 IGBT 5j301 equivalent IGBT PDF

    5J301

    Abstract: 2-10R1C
    Contextual Info: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30µs Max. (IC = 5A) z Low saturation voltage


    Original     		GT5J301 5J301 2-10R1C PDF