IGBT 500V 1A Search Results

C644 transistor

Abstract: C645 transistor transistor c644 diode C646 transistor C641 igbt 500V 15A C644 C646 C641 transistor IRGP440UD2
Contextual Info: PD - 9.1064 IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

22a ic

Abstract: D-12 IRGB440U Insulated Gate Bipolar Transistors pec 632
Contextual Info: PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V

igbt 500V 22A

Abstract: D-12 IRGB440U irgb440
Contextual Info: PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V

C644 transistor

Abstract: C641 transistor transistor c644 transistor C641 IRGP440UD2 C646 diode 400v 2A ultrafast
Contextual Info: PD - 9.1064 IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

AM 22A

Abstract: igbt 2A GE 731 igbt 500V 22A
Contextual Info: M O D E L 7 7 2 1 SERIES N EW PR O D U CT H Bridge Pow er Module Drives DC motors, transformers and other loads. Paralleled ultrafast diodes included. Standard applications are off-line DC motor control and power conversion. M O DELS/RA N G E 77 21 -1A 22 A 500V IGBTs with 8A 60 0V ultrafast diodes

Contextual Info: 500V breakdown voltage Full bridge driver IC SPF5104 Positive driver system •Features ■Package Exclude gate remain dimension ●500V breakdown voltage positive power supply drive system ●Adopt bootstrap circuit system ●Encapsulate MOSFET (4pieces) and a control MIC

IRF540 n-channel MOSFET

Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
Contextual Info: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.

stepper motor driver full bridge 6A

Abstract: mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge
Contextual Info: BRUSHLESS MOTOR DRIVE STMicroelectronics SOLUTIONS Mains Pre- Rectification Regulation Inverter Tacho/ Encoder Frequency Converter Servo Motor Drive Inverter Controller Tacho/ Encoder Inverter RECOMMENDED DEVICES MAIN FEATURES Mains Rectification BTW68/69 - xxx

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

Contextual Info: IGBT 5.5 kW 200 V •回路図 CIRCUIT PVD55-6 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） 質量 Approximate Weight：400ｇ ■最大定格 Maximum Ratings（TC＝25℃） 種類 Type 3 Phase Rectification Diode Switch Thyristor

Contextual Info: IGBT 7.5 kW 200 V •回路図 CIRCUIT PVD75-6 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） 質量 Approximate Weight：400ｇ ■最大定格 Maximum Ratings（TC＝25℃） 種類 Type 3 Phase Rectification Diode Switch Thyristor

Contextual Info: IGBT 11 kW 200 V •回路図 CIRCUIT PVD110-6 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） 質量 Approximate Weight：400ｇ ■最大定格 Maximum Ratings（TC＝25℃） 種類 Type 3 Phase Rectification Diode Switch Thyristor

Contextual Info: IGBT 15 kW 200 V •回路図 CIRCUIT PVD150-6 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） 質量 Approximate Weight：400ｇ ■最大定格 Maximum Ratings（TC＝25℃） 種類 Type 3 Phase Rectification Diode Switch Thyristor

IGBT 1500v 50A

Abstract: OM9369SF BLDC delta wye control
Contextual Info: Preliminary Data Sheet OM9369SF FULL-FEATURED, ‘SMART-POWER’ MODULE FOR HIGH-VOLTAGE DIRECT DRIVE OF 3-PHASE BRUSHLESS DC MOTORS 50 Amp, Push-Pull, Smart-Power Hybrid Commutates, Controls, And Directly Drives q BLDC Motors High-Voltage, High-Power 3q FEATURES

Contextual Info: IGBT 5.5 kW 400 V •回路図 CIRCUIT PVD55-12 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） 質量 Approximate Weight：400ｇ ■最大定格 Maximum Ratings（TC＝25℃） 種類 Type 3 Phase Rectification Diode Switch Thyristor

Contextual Info: IGBT 7.5 kW 400 V •回路図 CIRCUIT PVD75-12 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） 質量 Approximate Weight：400ｇ ■最大定格 Maximum Ratings（TC＝25℃） 種類 Type 3 Phase Rectification Diode Switch Thyristor

Contextual Info: IGBT 15 kW 400 V •回路図 CIRCUIT PVD150-12 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） 質量 Approximate Weight：400ｇ ■最大定格 Maximum Ratings（TC＝25℃） 種類 Type 3 Phase Rectification Diode Switch Thyristor

dc motor speed control hall pwm analog schematic

Abstract: 250 amp IGBT FOR pwm DRIVE IGBT 1500v 50A bldc dynamic braking BLDC delta wye control IGBT 40A IGBT 25A HAll EFFECT SENSOR CODING IGBT DRIVER SCHEMATIC 3 PHASE Ir sensor 3 pin details
Contextual Info: OM9369SF Preliminary Data Sheet FULL-FEATURED, SMART-POWER’ MODULE FOR HIGH-VOLTAGE DIRECT DRIVE OF 3-PHASE BRUSHLESS DC MOTORS 50 Amp, Push-Pull, Smart-Power Hybrid Commutates, Controls, And Directly Drives High-Voltage, High-Power 30 BLDC Motors FEATURES

1N2074A

Abstract: h bridge inverter using ir2112 mosfet driver power inverter schematic diagram ir2110 ic 555 timer gate drive scr inverter schematic PWM IR2112 IRF540 LN4148 full bridge ir2110 h bridge irf740 inverter h bridge ir2110 555 igbt driver IR2117
Contextual Info: APPLICATION NOTE AN978 International Rectifier • 233 Kansas Street El Segundo CA 90245 USA HV Floating MOS-Gate Driver ICs HEXFET is a trademark of International Rectifier Topics Covered: Gate drive requirements of high side devices Block diagram of a typical MGD

Film Technology to Replace Electrolytic Technology

Abstract: DC Link capacitor calculation 100 microfarad electrolytic capacitor 0.1 microfarad electrolytic capacitor of 1000 microfarad electrolytic capacitor of 10 volts 1000 microfarad electrolytic capacitor dielectric constant of aluminium capacitor capacitor, 1000 microfarad and 25 volts avx film
Contextual Info: FILM TECHNOLOGY TO REPLACE ELECTROLYTIC TECHNOLOGY A B S T R A C T : Since 1980, great improvements have been made on DC filter capacitors using a combination of metallized plastic films and different segmentations of the metallization on those film dielectrics. Volume and

Contextual Info: IR2125 and IR2121 Current-Limiting MOS Gate Drivers The International Rectifier IR2125 High-Side 500V device and the IR2121 Low-Side 20V device are new current-limiting MOS Gate Drivers in 8-pin DIPs that allow true building-block flexibility for circuit designers to mix and match

IKCS12G60DA

Abstract: IKCS12G60DC body contact FET soi
Contextual Info: Data Sheet, Jun. 2010 C o n t r o l I n t e g r a t e d P Ow e r System CIPOS IKCS12G60DA IKCS12G60DC http://www.lspst.com For Power Management Application CIPOS™ IKCS12G60DA IKCS12G60DC Revision History: Previous Version: Page 2010-06 Rev.1.0 Infineon Technologies Data Sheet Ver. 2.3

MR2920

Abstract: MR2940 SHINDENGEN MR2520 MR2520 AC180276V kick circuit drain MR2000 MR2540 mr2520 equivalent AC180
Contextual Info: Vol.02-06-e / June2002 MR2000 Series Standby Compatible Partial Resonance Power Supply IC Module with High-speed IGBT Shigeru Hisada - Electronic Device Div.Group Advanced Power Products Div. Device Design Dept. Joined the company in 1991 1 Introduction

RHRP640CC

Abstract: RHRP650CC RHRP660CC TB334
Contextual Info: RHRP640CC, RHRP650CC, RHRP660CC January 2002 6A, 400V - 600V Hyperfast Dual Diodes Features RHRP640CC, RHRP650CC and RHRP660CC are hyperfast dual diodes with soft recovery characteristics t rr < 30ns . They have half the recovery time of ultrafast diodes and are