IGBT 500A 1200V Search Results
IGBT 500A 1200V Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| GT50J123 |
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IGBT, 600 V, 59 A, TO-3P(N) | Datasheet | ||
| GT30J122A |
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IGBT, 600 V, 30 A, TO-3P(N) | Datasheet | ||
| GT20J121 |
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IGBT, 600 V, 20 A, TO-220SIS | Datasheet | ||
| GT30J121 |
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IGBT, 600 V, 30 A, TO-3P(N) | Datasheet | ||
| GT20J341 |
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IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS | Datasheet |
IGBT 500A 1200V Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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DIM500GCM33-TS000
Abstract: DIM500GCM33-TS
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DIM500GCM33-TS000 DS6098-2 DS6098-3 LN31960) 65ames DIM500GCM33-TS000 DIM500GCM33-TS | |
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Contextual Info: DIM500GCM33-TS000 IGBT Chopper Module DS6098-1 May 2013 LN30465 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) Isolated AlSiC Base With AlN Substrates |
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DIM500GCM33-TS000 DS6098-1 LN30465) 2400ames | |
DIM500GCM33-TL000
Abstract: DIM500GCM33-TL
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DIM500GCM33-TL000 DS6114-1 DS6114-2 LN31264) DIM500GCM33-TL000 DIM500GCM33-TL | |
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Contextual Info: DIM500GCM33-TS000 IGBT Chopper Module DS6098-1 May 2013 LN30465 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) Isolated AlSiC Base With AlN Substrates |
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DIM500GCM33-TS000 DS6098-1 LN30465) 2400ames | |
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Contextual Info: DIM500GCM33-TL000 IGBT Chopper Module DS6114-1 July 2013 LN30663 FEATURES KEY PARAMETERS • Low VCE(sat) Device 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max) High Current Density Enhanced DMOS SPT |
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DIM500GCM33-TL000 DS6114-1 LN30663) | |
68nFContextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom |
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68nf
Abstract: diode 500A IGBT FF 300 IC800
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DIM500GDM33-TS000
Abstract: DIM500GDM33-TS
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DIM500GDM33-TS000 DS6097-2 DS6097-3 LN31961) DIM500GDM33-TS000 DIM500GDM33-TS | |
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Contextual Info: DIM500GDM33-TS000 Dual Switch IGBT Module DS6097-1 May 2013 LN30461 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) Isolated AlSiC Base with AlN Substrates |
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DIM500GDM33-TS000 DS6097-1 LN30461) | |
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Contextual Info: DIM500GDM33-TL000 Dual Switch IGBT Module DS6113-1 July 2013 LN30662 FEATURES KEY PARAMETERS • Low VCE(sat) Device 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max) High Current Density Enhanced DMOS SPT |
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DIM500GDM33-TL000 DS6113-1 LN30662) | |
DIM500GDM33-TL000
Abstract: DIM500GDM33-TL DS61132
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DIM500GDM33-TL000 DS6113-1 DS6113-2 LN31251) DIM500GDM33-TL000 DIM500GDM33-TL DS61132 | |
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Contextual Info: DIM500GDM33-TS000 Dual Switch IGBT Module DS6097-1 May 2013 LN30461 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) Isolated AlSiC Base with AlN Substrates |
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DIM500GDM33-TS000 DS6097-1 LN30461) | |
LM 949
Abstract: DIM500BSS12-H000 transistor 600v 500a
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DIM500BSS12-H000 DS5643-1 20kHz DIM500BSS12-H000 LM 949 transistor 600v 500a | |
IC LM 2003Contextual Info: DIM500BSS12-H000 DIM500BSS12-H000 Fast Single Switch IGBT Module Target Infomation DS5643-2.0 September 2003 FEATURES • Non Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat) † (max) |
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DIM500BSS12-H000 DS5643-2 20kHz DIM500BSS12-H000 IC LM 2003 | |
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K30120G3
Abstract: ISL9K30120G3 smart ups 750 circuit MOSFET 1200v 30a K30120G AN-7528 IGBT 500A 1200V mosfet 1200V 30a smps
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ISL9K30120G3 ISL9K30120G3 K30120G3 smart ups 750 circuit MOSFET 1200v 30a K30120G AN-7528 IGBT 500A 1200V mosfet 1200V 30a smps | |
diode 500A
Abstract: diode 500A 1200v
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Contextual Info: ISL9R30120G2 30A, 1200V Stealth Diode General Description Features The ISL9R30120G2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft recovery under typical |
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ISL9R30120G2 ISL9R30120G2 120lopment. | |
diode 500A
Abstract: IGBT 500A 1200V FF51
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SKIIP DRIVERContextual Info: SKiiP 592 GH 170 - 2*271 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and InverseDiode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms |
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Contextual Info: SKiiP 592 GB 170 - 271 CTV Absolute Maximum Ratings Symbol 4 Conditions 1) Values Visol Top ,Tstg AC, 1min Operating / stor. temperature IGBT and VCES 5) VCC IC 3) Tj IF IFM IFSM 2 I t Diode) Driver VS1 VS2 fsmax dV/dt Diode Operating DC link voltage IGBT |
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diode b73Contextual Info: SKiiP 592 GB 170 - 271 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and InverseDiode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms IFSM |
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semikron skiip 3
Abstract: semikron skiip 10 diode b73
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Contextual Info: SKiiP 592 GH 170 - 2*271 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and InverseDiode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms |
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Contextual Info: PRELIMINARY DATASHEET NO. PD-9.802 International S ] Rectifier IRGPC50UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT • Latch-proof • Simple gate drive • High operating frequency • Switching-loss rating includes |
OCR Scan |
IRGPC50UD2 Liguna49 00220b3 | |