IGBT 40 A Search Results

IGBT 40 A Result Highlights (5)

Part	Manufacturer	Description	Download
GT50J123	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 59 A, TO-3P(N)	Datasheet
GT30J122A	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT20J121	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, TO-220SIS	Datasheet
GT30J121	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT20J341	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS	Datasheet

IGBT 40 A Price and Stock

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Power Integrations


Power Integrations 2SP0320V2A0-2MBI1400VXB-170E-50 Gate Drivers ONLY for FUJI 2MBI1400VXB-170E-50 module
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	2SP0320V2A0-2MBI1400VXB-170E-50					1 $197.57 10 $197.57 100 $197.57 1000 $197.57 10000 $197.57	Get Quote
	2SP0320V2A0-2MBI1400VXB-170E-50					1 $197.57 10 $197.57 100 $197.57 1000 $197.57 10000 $197.57	Get Quote
Power Integrations 2SP0320V2A0-2MBI1400VXB-170P-50 Gate Drivers ONLY for FUJI 2MBI1400VXB-170P-50 module
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	2SP0320V2A0-2MBI1400VXB-170P-50					1 $197.57 10 $197.57 100 $197.57 1000 $197.57 10000 $197.57	Get Quote
	2SP0320V2A0-2MBI1400VXB-170P-50					1 $197.57 10 $197.57 100 $197.57 1000 $197.57 10000 $197.57	Get Quote

IGBT 40 A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BSM100GB120DLCK Abstract: UF01 Contextual Info: Technische Information / technical information BSM100GB120DLCK IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ % & ' ' $ 3. 3 ' 9 $ > > ' & / ? /012 # 0 + -. (0 + ,-. 40 567 40 # :+# ' % ( * + ,-.	Original	BSM100GB120DLCK BSM100GB120DLCK UF01	PDF
Contextual Info: SENSITRON SEMICONDUCTOR MOD1008 TECHNICAL DATA DATA SHEET 2015, REV. - 12 1 2 3 600 VOLT, 40 AMP IGBT MODULE 4 5 11 10 9 6 ELECTRICAL CHARACTERISTICS PER IGBT DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED PARAMETER SYMBOL MIN TYP MAX 600 - - - - 40 UNIT IGBT SPECIFICATIONS	Original	MOD1008 /-20V	PDF
Contextual Info: SENSITRON SEMICONDUCTOR MOD1008 TECHNICAL DATA DATA SHEET 2015, REV. - 12 1 2 3 600 VOLT, 40 AMP IGBT MODULE 4 5 11 10 9 6 ELECTRICAL CHARACTERISTICS PER IGBT DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED PARAMETER SYMBOL MIN TYP MAX 600 - - - - 40 UNIT IGBT SPECIFICATIONS	Original	MOD1008 /-20V	PDF
Contextual Info: SENSITRON SEMICONDUCTOR MOD1010 TECHNICAL DATA DATA SHEET 2016, REV. - 12 1 2 3 4 600 VOLT, 40 AMP IGBT MODULE 5 11 10 9 8 7 6 ELECTRICAL CHARACTERISTICS PER IGBT DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED PARAMETER SYMBOL MIN TYP MAX 600 - - - - 40 UNIT	Original	MOD1010 /-20V	PDF
Contextual Info: SENSITRON SEMICONDUCTOR MOD1010 TECHNICAL DATA DATA SHEET 2016, REV. - 12 1 2 3 4 600 VOLT, 40 AMP IGBT MODULE 5 11 10 9 8 7 6 ELECTRICAL CHARACTERISTICS PER IGBT DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED PARAMETER SYMBOL MIN TYP MAX 600 - - - - 40 UNIT	Original	MOD1010 /-20V	PDF
Contextual Info: International lORRectifi G f PD - 5.047B PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA250TS60U Ultra-Fast Speed IGBT Features V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz In hard switching, >200	OCR Scan	GA250TS60U	PDF
Contextual Info: SENSITRON SEMICONDUCTOR MOD1004 TECHNICAL DATA DATA SHEET 1125, REV. 12 1 2 3 4 5 11 10 9 8 7 6 600 VOLT, 40 AMP IGBT H-BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER Tj=250C UNLESS OTHERWISE SPECIFIED SYMBOL MIN TYP MAX UNIT 600 - - V - - 40	Original	MOD1004 /-20V	PDF
"IGBT h-bridge" Contextual Info: SENSITRON SEMICONDUCTOR MOD1004 TECHNICAL DATA DATA SHEET 1125, REV. 12 1 2 3 4 5 11 10 9 8 7 6 600 VOLT, 40 AMP IGBT H-BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER Tj=250C UNLESS OTHERWISE SPECIFIED SYMBOL MIN TYP MAX UNIT 600 - - V - - 40	Original	MOD1004 /-20V "IGBT h-bridge"	PDF
Contextual Info: International TOR Rectifier PD -5.048 PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA500TD60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces - 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200	OCR Scan	GA500TD60U	PDF
GA100TS120UPBF Contextual Info: Preliminary Data Sheet I27243 12/06 GA100TS120UPbF "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode	Original	I27243 GA100TS120UPbF GA100TS120UPBF	PDF
GA400TD60U Contextual Info: PD - 5.059B PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA400TD60U Ultra-FastTM Speed IGBT Feature Featuress VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode	Original	GA400TD60U GA400TD60U	PDF
GA150TS60U Abstract: 150TS60U Contextual Info: International 3BSR Rectifi6r preliminary "HALF-BRIDGE" IGBT INT-A-PAK PD'5056 G A 150TS60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology VcES = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200	OCR Scan	150TS60U GA150TS60U 150TS60U	PDF
GA100TS120UPBF Contextual Info: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK UltrafastTM Speed IGBT FEATURES • Generation 4 IGBT technology 3 • Ultrafast: optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode 6 7	Original	GA100TS120UPbF 12-Mar-07 GA100TS120UPBF	PDF
GA100TS120U Contextual Info: PD - 50060B GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses	Original	50060B GA100TS120U T52-7105 GA100TS120U	PDF

iu728 Contextual Info: International ISgR Rectifier preliminary "HALF-BRIDGE" IGBT INT-A-PAK PD'5047A GA250TS60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V c e s = 60 0V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200	OCR Scan	GA250TS60U iu728	PDF
GA100TS120U Abstract: 18672 Contextual Info: PD - 5.060 PRELIMINARY GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses	Original	GA100TS120U GA100TS120U 18672	PDF
Contextual Info: International IQ R Rectifier PD - 5.047B PRELIMINARY "HALF-BRIDGE” IGBT INT-A-PAK GA250TS60U Ultra-Fast Speed IGBT Fe at ur es • Generation 4 IGBT technology V ces = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200	OCR Scan	GA250TS60U	PDF
GA200TD120U Contextual Info: PD - 50061D GA200TD120U "HALF-BRIDGE" IGBT DUAL INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses	Original	50061D GA200TD120U GA200TD120U	PDF
GA300TD60U Contextual Info: PD -50057D GA300TD60U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses	Original	-50057D GA300TD60U GA300TD60U	PDF
Contextual Info: International IOR Rectifie f PD - 5.048B PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK GA500TD60U Ultra-Fast Speed IGBT Features V ce s = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200	OCR Scan	GA500TD60U 1000S	PDF
ic 5056 mv 85 Abstract: GA150TS60U Contextual Info: PD -5.056 PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA150TS60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses	Original	GA150TS60U ic 5056 mv 85 GA150TS60U	PDF
GA500TD60U Contextual Info: PD - 50048C GA500TD60U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses	Original	50048C GA500TD60U GA500TD60U	PDF
GE 443 Abstract: GA100TS60U Contextual Info: PD -50055B GA100TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses	Original	-50055B GA100TS60U GE 443 GA100TS60U	PDF
DIODE 1439 Abstract: 60 27755 GA300TD60U Contextual Info: PD -50057E GA300TD60U "HALF-BRIDGE" IGBT DUAL INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses	Original	-50057E GA300TD60U DIODE 1439 60 27755 GA300TD60U	PDF

IGBT 40 A Search Results

IGBT 40 A Result Highlights (5)

IGBT 40 A Price and Stock

Power Integrations 2SP0320V2A0-2MBI1400VXB-170E-50

Power Integrations 2SP0320V2A0-2MBI1400VXB-170P-50

IGBT 40 A Datasheets Context Search

BSM100GB120DLCK

"IGBT h-bridge"

GA100TS120UPBF

GA400TD60U

GA150TS60U

GA100TS120UPBF

GA100TS120U

iu728

GA100TS120U

GA200TD120U

GA300TD60U

ic 5056 mv 85

GA500TD60U

GE 443

DIODE 1439