IGBT 3 PIN Search Results
IGBT 3 PIN Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| GT50J123 |
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IGBT, 600 V, 59 A, TO-3P(N) | Datasheet | ||
| GT30J122A |
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IGBT, 600 V, 30 A, TO-3P(N) | Datasheet | ||
| GT30J121 |
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IGBT, 600 V, 30 A, TO-3P(N) | Datasheet | ||
| GT20J121 |
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IGBT, 600 V, 20 A, TO-220SIS | Datasheet | ||
| GT20J341 |
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IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS | Datasheet |
IGBT 3 PIN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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pm20cma060
Abstract: 3 phase rectifier circuit diagram igbt ultrafast n channel 600v 20a IGBT h 9128 Alcohol detection with vehicle controlling pm20c P channel 600v 20a IGBT resistor sms diode B5C 3 phase UPS block WITH CIRCUIT diagram
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OCR Scan |
PM20CMA060 300VDC, 25kHz PM20CMA060 10-Timing S5M52 3 phase rectifier circuit diagram igbt ultrafast n channel 600v 20a IGBT h 9128 Alcohol detection with vehicle controlling pm20c P channel 600v 20a IGBT resistor sms diode B5C 3 phase UPS block WITH CIRCUIT diagram | |
pin diagram of ic 4440
Abstract: 4440 ic wiring diagram SDIP-25L thermistor table STGIPS10K60A 3-phase 400 hz inverters circuit diagram single phase to 3 phase inverter AC GIPS10K60
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STGIPS10K60A SDIP-25L pin diagram of ic 4440 4440 ic wiring diagram SDIP-25L thermistor table STGIPS10K60A 3-phase 400 hz inverters circuit diagram single phase to 3 phase inverter AC GIPS10K60 | |
ultrafast n channel 600v 20a IGBTContextual Info: International IMlRecbfier provisional P D -9.1284 IPM2060 IGBT INTELLIGENT MODULE Features • • • • • • • • • 3 phase IGBT bridge with drive and protection circuit. 3 kW output power at 300VDC, 8kHz, Tc = 85°C "UltraFast" IGBT and "HEXFRED"™ Ultrafast, Soft Recovery Diodes, |
OCR Scan |
300VDC, 25kHz IPM2060 IPM2060 HEXFRED2060 10-Timing 4flS5452 0022S2M ultrafast n channel 600v 20a IGBT | |
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Contextual Info: STGIPN3H60A SLLIMM -nano small low-loss intelligent molded module IPM, 3 A - 600 V 3-phase IGBT inverter bridge Datasheet − production data Features • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes |
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STGIPN3H60A NDIP-26L | |
td65
Abstract: high voltage gate drive transformer AC200V CM50MD1-12H M57174BL-06B
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OCR Scan |
M57174BL-06B M57174BL-06B AC200V td65 high voltage gate drive transformer CM50MD1-12H | |
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Contextual Info: STGIPN3H60 SLLIMM -nano small low-loss intelligent molded module IPM, 3 A - 600 V 3-phase IGBT inverter bridge Datasheet − production data Features • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes |
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STGIPN3H60 | |
KU21
Abstract: FS20R06W1E3 DL94 UCW24
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FS20R06W1E3 KU21 FS20R06W1E3 DL94 UCW24 | |
FS50R06W1E3
Abstract: SF92 rf 6z
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FS50R06W1E3 FS50R06W1E3 SF92 rf 6z | |
zener DIODE A112
Abstract: DC Motor control IGBT FUJI ELECTRIC ipm 7mbp75ra120 IGBT DRIVE 500V 300A 7MBP50RA120 application note 7MBP50RA06001 overcurrent circuit protection shock fuji ipm calculation of IGBT snubber TLP521-1GR
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REH983 zener DIODE A112 DC Motor control IGBT FUJI ELECTRIC ipm 7mbp75ra120 IGBT DRIVE 500V 300A 7MBP50RA120 application note 7MBP50RA06001 overcurrent circuit protection shock fuji ipm calculation of IGBT snubber TLP521-1GR | |
3DD3Contextual Info: Technische Information / technical information FB20R06XE3 IGBT-Module IGBT-modules Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values EDD32!"C32#132214BBFB$ DD323"C326D4$3 |
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FB20R06XE3 14BBFB$ A4F32 F223B 3265C 1231423567896A4BC3D6E23F 61F7DC 3DD3 | |
LTC4098-3.6
Abstract: SXA-01GW-P0.6
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FB20R06YE3 14BBFB& A4F32 F223B 3265C 1231423567896A4BC3D6E23F 61F7DC LTC4098-3.6 SXA-01GW-P0.6 | |
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Contextual Info: IXA40RG1200DHGLB tentative XPT IGBT = ISOPLUS Surface Mount Power Device Boost Topology XPT IGBT Part number Backside: isolated 7 BD VDD 9 1 FWD 3 2 8 Features / Advantages: XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling |
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IXA40RG1200DHGLB 60747and | |
Tag 225-600
Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
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DS5766-4. Tag 225-600 IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes | |
STGIPN3H60
Abstract: AN4043 GIPN3H60-H gipn3h60
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STGIPN3H60-H NDIP-26L STGIPN3H60 AN4043 GIPN3H60-H gipn3h60 | |
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Contextual Info: IXA30RG1200DHGLB tentative XPT IGBT = ISOPLUS Surface Mount Power Device Boost Topology XPT IGBT Part number Backside: isolated 7 BD VDD 9 1 FWD 3 2 8 Features / Advantages: XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling |
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IXA30RG1200DHGLB 60747and | |
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Contextual Info: IXA20RG1200DHGLB tentative XPT IGBT = ISOPLUS Surface Mount Power Device Boost Topology XPT IGBT Part number Backside: isolated 7 BD VDD 9 1 FWD 3 2 8 Features / Advantages: XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling |
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IXA20RG1200DHGLB 60747and | |
PM15CMA060
Abstract: PM15CMA ls igbt block circuit diagram for igbt driver 3 phase UPS block diagram
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OCR Scan |
300VDC, 25kHz PM15CMA060 PM15CMA060 PM15CMA ls igbt block circuit diagram for igbt driver 3 phase UPS block diagram | |
V23990-k438Contextual Info: Power Modules New MiniSKiiP Modules with Mitsubishi’s Latest IGBT 6.1 Product name ® MiniSKiiP PIM 3 16 x 82 x 59 mm Vincotech has extended its range of MiniSKiiP® PIM 3 and MiniSKiiP® PACK 3 power modules featuring Mitsubishi IGBT 6.1 versions covering |
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20-to-70 37NAB12T4V1 38NAB12T4V1 V23990-K438-F60-PM 37AC12T4V1 V23990-K439-F60-PM 38AC12T4V1 V23990-K430-F60-PM 39AC12T4V1 Oct-14 V23990-k438 | |
200 amp 120 V igbt
Abstract: MHPM6B20A60D
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MHPM6B20A60D/D MHPM6B20A60D MHPM6B20A60D/D* 200 amp 120 V igbt MHPM6B20A60D | |
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Contextual Info: SENSITRON SEMICONDUCTOR MOD1008 TECHNICAL DATA DATA SHEET 2015, REV. - 12 1 2 3 600 VOLT, 40 AMP IGBT MODULE 4 5 11 10 9 6 ELECTRICAL CHARACTERISTICS PER IGBT DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED PARAMETER SYMBOL MIN TYP MAX 600 - - - - 40 UNIT IGBT SPECIFICATIONS |
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MOD1008 /-20V | |
tyco igbt module 25A
Abstract: tyco igbt module 25A 1200V tyco igbt module 15A tyco igbt module tyco igbt tyco P487 tyco igbt P487 p487 tyco igbt p483 V23990-P48X-A
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D-81359 V23990-P48X-A V23990P481- tyco igbt module 25A tyco igbt module 25A 1200V tyco igbt module 15A tyco igbt module tyco igbt tyco P487 tyco igbt P487 p487 tyco igbt p483 V23990-P48X-A | |
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Contextual Info: SENSITRON SEMICONDUCTOR MOD1008 TECHNICAL DATA DATA SHEET 2015, REV. - 12 1 2 3 600 VOLT, 40 AMP IGBT MODULE 4 5 11 10 9 6 ELECTRICAL CHARACTERISTICS PER IGBT DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED PARAMETER SYMBOL MIN TYP MAX 600 - - - - 40 UNIT IGBT SPECIFICATIONS |
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MOD1008 /-20V | |
motorola e6 SCHEMATIC
Abstract: MHPM6B15A120D
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MHPM6B15A120D/D MHPM6B15A120D 2500re MHPM6B15A120D/D* motorola e6 SCHEMATIC MHPM6B15A120D | |
MHPM6B10A120DContextual Info: MOTOROLA Order this document by MHPM6B10A120D/D SEMICONDUCTOR TECHNICAL DATA MHPM6B10A120D Hybrid Power Module Motorola Preferred Device 6–Pack Integrated Power Stage This module integrates Six IGBT’s in a 3–phase IGBT inverter configuration. The output inverter utilizes advanced insulated gate bipolar transistors IGBT |
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MHPM6B10A120D/D MHPM6B10A120D 2500re MHPM6B10A120D/D* MHPM6B10A120D | |