IGBT 3 KA 3.3KV Search Results

IGBT 3 KA 3.3KV Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
GT50J123		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 59 A, TO-3P(N)	Datasheet
GT30J122A		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT20J121		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, TO-220SIS	Datasheet
GT30J121		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT20J341		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS	Datasheet

IGBT 3 KA 3.3KV Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
6.5kV IGBT Abstract: 6.5kV IGBT loss igbt 6.5kv igbt3 igbt2 infineon L280N A-9500 igbt2 infineon infineon igbt3 ohm HIGH VOLTAGE DIODE 3.3kv 3.3kv diode Contextual Info: 6.5kV IGBT and FWD with Trench and VLD Technology for reduced Losses and high dynamic Ruggedness 1 2) 2) 3) 3) Thomas Duetemeyer , Josef-Georg Bauer , Elmar Falck , Carsten Schaeffer , G. Schmidt , 1) Burkhard Stemmer , 1 Infineon Technologies AG, Max-Planck-Straße 5, D-59581 Warstein Germany	Original	D-59581 D-85579 6.5kV IGBT 6.5kV IGBT loss igbt 6.5kv igbt3 igbt2 infineon L280N A-9500 igbt2 infineon infineon igbt3 ohm HIGH VOLTAGE DIODE 3.3kv 3.3kv diode	PDF
FS300R12OE4P Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3 Contextual Info: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in	Original		PDF
FZ1200R33KF1 Abstract: igbt 500V 2A IGBT 3.3kv eupec igbt 3.3kv siemens IGBT 600a Brunner IGBT FZ1200 HIGH VOLTAGE DIODE 3.3kv Contextual Info: Application and Characteristics of High Voltage IGBT Modules M.Hierholzer, eupec GmbH & Co KG, Warstein, Germany A.Porst, Th.Laska, H.Brunner, Siemens AG, München, Germany New IGBT modules with blocking voltage of 3300V and current capability up to 1200A became	Original	200V/1600V FZ1200R33KF1 FZ1200R33KF1 igbt 500V 2A IGBT 3.3kv eupec igbt 3.3kv siemens IGBT 600a Brunner IGBT FZ1200 HIGH VOLTAGE DIODE 3.3kv	PDF
BUSBAR calculation Abstract: BUSBAR calculation datasheet calculation of IGBT snubber 3 level inverter 3 phase motor inverters circuit diagram igbt 3 phase inverters circuit diagram igbt DC Link capacitor calculation design dc link inverter IGBT inverter calculation inductances types Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Design Aspects for Inverters with IGBT High Power Modules Dr.-Ing. Th. Schütze, eupec GmbH & Co KG, Warstein, Germany Abstract With regard to the blocking ability and efficiency of the new 3.3 kV IGBT high voltage modules IHV with nominal	Original		PDF
1287-standard Abstract: SiC IGBT High Power Modules eupec igbt 3.3kv failure analysis IGBT PCIM 96 igbt failure fit HIGH VOLTAGE DIODE 3.3kv "DATA MATRIX" EUPEC Contextual Info: Further Improvements in the Reliability of IGBT Modules Thomas Schütze, Hermann Berg, Martin Hierholzer eupec GmbH & Co. KG Max-Planck-Straße 5 59581 Warstein, Germany Abstract- This paper gives a survey of the measures and the resulting improvements of IGBT module reliability	Original		PDF
HIGH VOLTAGE DIODE 3.3kv Abstract: 3.3kv diode FZ1200R33KF2C EUPEC T 503 junction termination extension igbt 3 KA 3.3kv emcon diode diode current 1200A FZ1200r igbt 3.3kv Contextual Info: New 3300V High Power Emcon-HDR Diode with High Dynamic Robustness J. Biermann1 , K.-H. Hoppe1), O. Schilling1), J.G. Bauer2), A. Mauder2), E. Falck2), H.-J. Schulze2), H. Rüthing2), G. Achatz3) 1 2 eupec GmbH, Max-Planck-Straße, D-59581 Warstein, Germany	Original	D-59581 D-81541 HIGH VOLTAGE DIODE 3.3kv 3.3kv diode FZ1200R33KF2C EUPEC T 503 junction termination extension igbt 3 KA 3.3kv emcon diode diode current 1200A FZ1200r igbt 3.3kv	PDF