IGBT 1200V 8A Search Results

SIGC12T120

Abstract: ic 2028
Contextual Info: Preliminary SIGC12T120 3 IGBT Chip FEATURES: • 1200V Trench & Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC12T120 VCE ICn 1200V 8A This chip is used for: • power module

SIGC12T120L

Abstract: infineon igbt die 1200V
Contextual Info: SIGC12T120L 3 IGBT Chip FEATURES: • 1200V Trench & Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC12T120L VCE ICn 1200V 8A This chip is used for:

SIGC12T120

Abstract: infineon igbt die 1200V
Contextual Info: SIGC12T120 3 IGBT Chip FEATURES: • 1200V Trench & Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC12T120 VCE ICn 1200V 8A This chip is used for: • power module

SIGC12T120L

Contextual Info: SIGC12T120L 3 IGBT Chip FEATURES: • 1200V Trench & Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC12T120L VCE ICn 1200V 8A This chip is used for:

SIGC12T120

Contextual Info: SIGC12T120 3 IGBT Chip FEATURES: • 1200V Trench & Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC12T120 VCE ICn 1200V 8A This chip is used for: • power module

Contextual Info: SIGC12T120L 3 IGBT Chip FEATURES: • 1200V Trench & Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC12T120L VCE ICn 1200V 8A This chip is used for:

SIGC12T120

Contextual Info: Preliminary SIGC12T120 3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC12T120 VCE ICn 1200V 8A This chip is used for: • power module

Contextual Info: Preliminary SIGC12T120 3 IGBT Chip FEATURES: • 1200V Trench & Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC12T120 VCE ICn 1200V 8A This chip is used for: • power module

SIGC12T120L

Contextual Info: Preliminary SIGC12T120L 3 IGBT Chip FEATURES: • 1200V Trench & Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC12T120L VCE ICn 1200V 8A This chip is used for:

A003

Abstract: SIGC16T120CL
Contextual Info: Preliminary SIGC16T120CL IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CL 1200V This chip is used for: • chip only

SIGC16T120CL

Contextual Info: Preliminary SIGC16T120CL IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CL 1200V This chip is used for: • chip only

soft solder die bonding

Abstract: igbt "sawn on foil" SMPS IC 2003 SGP07N120 SIGC16T120CS infineon igbt3 1200v
Contextual Info: SIGC16T120CS IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CS 1200V This chip is used for: • SGP07N120 Applications:

Contextual Info: SIGC16T120CS IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CS 1200V This chip is used for: • SGP07N120 Applications:

SGP07N120

Abstract: SIGC16T120CS infineon igbt3 1200v
Contextual Info: Preliminary SIGC16T120CS IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CS 1200V This chip is used for: • SGP07N120

7131

Contextual Info: SIGC16T120CL IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CL 1200V This chip is used for: • chip only G Applications:

SIGC16T120CL

Contextual Info: SIGC16T120CL IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CL 1200V This chip is used for: • chip only G Applications:

311D

Abstract: A003 SIGC16T120C bup212
Contextual Info: Preliminary SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212

bup 311d

Abstract: bup212 igbt to220 311D SIGC16T120C
Contextual Info: Preliminary SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212

TO220 package infineon

Abstract: 311D SIGC16T120C BUP311D bup 311d
Contextual Info: SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212 G Applications:

Contextual Info: SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212 G Applications:

2sd315ai

Abstract: 2sc0108t bi-directional switch IGBT driver 2SC0435T 2SD106AI 2SD106Ai-17 2sc0108 2sc0435 CT-Concept igbt trafo drivers
Contextual Info: AN 5946 Driving Dynex High Power IGBT modules with Concept Gate Drives Application Note AN5946-2.0 September 2009 LN26854 Author: Dinesh Chamund Introduction Dynex Semiconductor manufactures a variety of IGBT modules ranging from 1200V to 6500V and 100A to 2400A.

Contextual Info: Preliminary Technical Information GenX3TM 1200V IGBT VCES = 1200V IC90 = 20A VCE sat ≤ 3.1V IXGA20N120B3 IXGP20N120B3 High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXGP20N120B3

Abstract: IXGP20N120B IXGA20N120B3 IXGA20N120B
Contextual Info: Preliminary Technical Information VCES = 1200V IC90 = 20A VCE sat ≤ 3.1V IXGA20N120B3 IXGP20N120B3 GenX3TM 1200V IGBT High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IR E78996

Abstract: GB25RF120K
Contextual Info: Bulletin PD - 94552 rev.A 05/03 GB25RF120K IGBT PIM MODULE VCES = 1200V Features • • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics