IGBT 1200A 600V Search Results

IC A 3120 igbt drive

Abstract: IGBT 1200A half bridge inverter schematic Power IGBT full bridge Inverter IGBT 1500 volts igbt bridge switching power supply IGBT full bridge 1200 igbt 600V igbt inverter reference schematics PP1200D060
Contextual Info: TENTATIVE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 PP1200D060 TM POW-R-PAK 1200A / 600V Half Bridge IGBT Assembly Description: TM The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a

24v 125A IGBT

Contextual Info: TENTATIVE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 PP1200D060 TM POW-R-PAK 1200A / 600V Half Bridge IGBT Assembly Description: TM The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a

2MBI1200U4G-120

Abstract: IGBT 1200A 600V
Contextual Info: / 2MBI1200U4G-120 IGBT Modules IGBT MODULE U series 1200V / 1200A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier

1MBI1200U4C-120

Abstract: 1mbi1200u 1MBI1200
Contextual Info: 1MBI1200U4C-120 IGBT Modules IGBT MODULE U series 1200V / 1200A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply

fast recovery diode 600v 1200A

Abstract: diode current 1200A MBN1200GR12A IGBT 1200A PDE-N1200GR12A-0 IGBT 1200A 600V
Contextual Info: PDE-N1200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN1200GR12A [Rated 1200A/1200V, Single-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.

hitachi igbt

Abstract: IGBT 1200A MBN1200GR12A Hitachi DSA0047
Contextual Info: PDE-N1200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN1200GR12A [Rated 1200A/1200V, Single-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.

AN4503

Abstract: AN4502 AN4505 GP1200FSS18
Contextual Info: GP1200FSS18 GP1200FSS18 Single Switch IGBT Module Replaces February 2000 version, DS5260-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200A Per Module DS5260-3.1 January 2001 KEY PARAMETERS

BQ JN

Abstract: PHMB1200B12 IGBT G033
Contextual Info: TENTATIVE IGBT MODULE PHMB1200B12 Single 1200A 1200V CIRCUIT OUTLINE DRAWING 4- fasten- tab No 110 Dimension mm Approximate Weight : 1,200g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation

AN4503

Abstract: AN4502 AN4505 AN4506 GP1200FSM18 AN5000
Contextual Info: GP1200FSM18 GP1200FSM18 Hi-Reliability Single Switch IGBT Module DS5410-1.2 January 2001 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 1200A Per Module KEY PARAMETERS VCES typ VCE(sat)

Contextual Info: JULY 1996 GP1200FSS12S ADVANCE ENGINEERING DATA DS4547-1.2 GP1200FSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 1200A IC(CONT) 2400A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control.

IGBT G033

Abstract: CC60 IGBT 600V 1200A
Contextual Info: TENTATIVE IGBT MODULE PHMB1200B12 Single 1200A 1200V CIRCUIT OUTLINE DRAWING 4- fasten- tab No 110 Dimension mm Approximate Weight : g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation

transistor 8929

Contextual Info: DIM1200FSS12-A000 Single Switch IGBT Module DS5834-1.0 March 2005 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) (LN23835) 1200V 2.2V 1200A 2400A Isolated Copper Baseplate

723 ic internal diagram

Abstract: GP1201FSS18 AN4502 AN4503 AN4505 AN4506
Contextual Info: GP1201FSS18 GP1201FSS18 Single Switch Low VCE SAT IGBT Module DS5411-1.1 January 2001 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200A Per Module KEY PARAMETERS VCES (typ)

semikron snubber

Abstract: snubber resistance of IGBT semikron IGBT snubber power mosfet 600v 600A IGBT 1200A SKIIPPACK Power MOSFET 150 A mosfet 600V 600A circuit snubber igbt
Contextual Info: SEMIKRPN innovation+ service U tf&i Now SEMIKRON introduces SKiiP SKiiP , a new compact technology for integrated intelligent power. SKiiPPACK® IGBT product range from 600 to 1700V from 150 to 800A sixpack 600V from 150 to 300A sixpack 1200/1700V from 400 to 1200A halfbridge 1200/1700V

Contextual Info: DIM600WHS12-E000 Single Switch IGBT Module DS5837-1.0 April 2005 FEATURES Trench Gate Field Stop Technology Low Conduction Losses KEY PARAMETERS VCES VCE sat (typ) IC (max) IC(PK) (max) (LN23871) 1200V 1.7 V 600A 1200A Low Switching Losses 10 s Short Circuit Withstand

DIM600BSS17-A000

Contextual Info: DIM600BSS17-A000 Single Switch IGBT Module DS5692-1.4.0 September 2007 LN25581 FEATURES 10 s Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES VCE (sat) * (typ) IC (max) IC(PK) (max) 1700V 2.7 V 600A 1200A *(Measured at the power bus-bars and not the auxiliary

Contextual Info: DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.2 May 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25346) 4500V 2.9 V 600A 1200A *(measured at the power busbars and not the auxiliary terminals)

DIM600NSM45-F000

Contextual Info: DIM600NSM45-F000 Single Switch IGBT Module DS5873-1.4 December 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25833) 4500V 2.9 V 600A 1200A *(measured at the power busbars and not the auxiliary terminals)

DIM600XSM45-F000

Abstract: 110nF
Contextual Info: DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.3 December 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25832) 4500V 2.9 V 600A 1200A *(measured at the power busbars and not the auxiliary terminals)

IGBT 1200A

Abstract: diode current 1200A MBN1200GR12A IGBT 1200A 600V 600VIC
Contextual Info: PDJ-N1200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN1200GR12A [定格 1200A/1200V, 1in1 パッケージタイプ] 特長 外形寸法図 • 低飽和電圧特性高速スイッチング • 低ターンオフスイッチング損失 • 高速ソフトリカバリダイオード USFD 採用

FZ1600R12KF4

Abstract: IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb
Contextual Info: power . Home Products IGBT 600V the News 1200V Contact Job Offers Company Search Site Content 1600V/1700V 2500V/3300V Sixpack Power Integrated Modules In Editorials future Low Loss. Half-Bridge Packages 50A BSM 50GB60DLC 75A BSM 75GB60DLC 100A BSM 100GB60DLC

CM600HU-12H

Abstract: E80276
Contextual Info: MITSUBISHI IGBT MODULES CM600HU-12H HIGH POWER SWITCHING USE INSULATED TYPE CM600HU-12H ● IC . 600A ● VCES . 600V ● Insulated Type

Contextual Info: MITSUBISHI IGBT MODULES CM600HU-12H HIGH POWER SWITCHING USE INSULATED TYPE CM600HU-12H ● IC . 600A ● VCES . 600V ● Insulated Type

T1200TB

Abstract: transistor 7830 diode current 1200A
Contextual Info: WESTCODE An Date:- 12 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T1200TB25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.