IGBT 10 A Search Results

pin diagram of ic 4440

Abstract: 4440 ic wiring diagram SDIP-25L thermistor table STGIPS10K60A 3-phase 400 hz inverters circuit diagram single phase to 3 phase inverter AC GIPS10K60
Contextual Info: STGIPS10K60A SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter - 10 A, 600 V short-circuit rugged IGBT Features • IPM 10 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ Short-circuit rugged IGBT

VS-GT100NA120UX

Contextual Info: VS-GT100NA120UX www.vishay.com Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 s short circuit capability • Fully isolated package

GT100NA120UX

Contextual Info: GT100NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 s short circuit capability • Fully isolated package SOT-227

gt100

Abstract: GT100NA120UX
Contextual Info: GT100NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 s short circuit capability • Fully isolated package SOT-227

GT100LA120UX

Contextual Info: GT100LA120UX Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 s short circuit capability SOT-227 • Fully isolated package

VS-GT100LA120UX

Contextual Info: VS-GT100LA120UX www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 s short circuit capability • Fully isolated package

GT100LA120UX

Contextual Info: GT100LA120UX Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 s short circuit capability SOT-227 • Fully isolated package

GT100LA120UX

Abstract: gt100 induction heating igbt 0 227 200 001 IR igbt gate driver ic 87TC igbt 100 T100L
Contextual Info: GT100LA120UX Vishay High Power Products "Low Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 µs short circuit capability SOT-227 • Fully isolated package

Contextual Info: SENSITRON SEMICONDUCTOR MOD1008 TECHNICAL DATA DATA SHEET 2015, REV. - 12 1 2 3 600 VOLT, 40 AMP IGBT MODULE 4 5 11 10 9 6 ELECTRICAL CHARACTERISTICS PER IGBT DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED PARAMETER SYMBOL MIN TYP MAX 600 - - - - 40 UNIT IGBT SPECIFICATIONS

GT100NA120UX

Abstract: dc to dc chopper using igbt GT-100 gt100na120
Contextual Info: GT100NA120UX Vishay High Power Products "High Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 µs short circuit capability SOT-227 • Fully isolated package

Contextual Info: Bulletin I27279 11/06 GB10XF120K IGBT SIXPACK MODULE Features VCES = 1200V • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC =13A • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ=150°C • HEXFRED Antiparallel Diode with Ultrasoft

MSK4454D

Abstract: MSK4454G MSK4454S MSK4454U use igbt for 3 phase induction motor
Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. M.S. KENNEDY CORP. 4454 10 AMP, 600 VOLT IGBT SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 600V,10 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 2.2°C/W (Each IGBT)

STGIPS10K60A

Abstract: SDIP-25L TN0107
Contextual Info: STGIPS10K60A IGBT intelligent power module IPM 10 A, 600 V, DBC isolated SDIP-25L molded Features • 10 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ 3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull down

IPM STMicroelectronics

Abstract: TN0107 SDIP-25L STGIPS10K60A
Contextual Info: STGIPS10K60A IGBT intelligent power module IPM 10 A - 600 V - SDIP-25L molded Preliminary data Features • 600 V, 10 A 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ 3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull down

Contextual Info: STGIPS10K60A 600 V - 10 A - SDIP-25L molded IGBT intelligent power module Preliminary data Features • 600 V, 10 A 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ 3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull down

Contextual Info: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. M.S. KENNEDY CORP. 4354 10 AMP, 600 VOLT IGBT SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 600V,10 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 1.35°C/W (Each IGBT)

Contextual Info: Bulletin I27308 01/06 GB10RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 12A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

GT100DA120U

Contextual Info: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

GT100DA120U

Contextual Info: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

GT100DA120U

Contextual Info: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

Contextual Info: VS-40MT120UHAPbF, VS-40MT120UHTAPbF www.vishay.com Vishay Semiconductors "Half Bridge" IGBT MTP Ultrafast NPT IGBT , 80 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient Available • 10 s short circuit capability

QDGM573

Abstract: 10D060 S4008
Contextual Info: FUJI IGBT & FWD 600 V 10 A 1M B G 10 D -060 @ lU M S n B O S Fuji Discrete Package IGBT Outline Drawing • Features •S q u a re RBSOA • Low Saturation Voltage • Less Total Pow er Dissipation • Minim ized Internal Stray Inductance ■ Applications

Contextual Info: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery

GT100DA120U

Contextual Info: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse