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    IGBT 10 A Search Results

    IGBT 10 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT50J123
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 59 A, TO-3P(N) Datasheet
    GT20J121
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 20 A, TO-220SIS Datasheet
    GT30J121
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Datasheet
    GT30J122A
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Datasheet
    GT20N135SRA
    Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 40 A, Built-in Diodes, TO-247 Datasheet

    IGBT 10 A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GT100LA120UX

    Contextual Info: GT100LA120UX Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 s short circuit capability SOT-227 • Fully isolated package


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    GT100LA120UX OT-227 E78996 2002/95/EC OT-227 11-Mar-11 GT100LA120UX PDF

    VS-GT100LA120UX

    Contextual Info: VS-GT100LA120UX www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 s short circuit capability • Fully isolated package


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    VS-GT100LA120UX OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A VS-GT100LA120UX PDF

    Contextual Info: SENSITRON SEMICONDUCTOR MOD1008 TECHNICAL DATA DATA SHEET 2015, REV. - 12 1 2 3 600 VOLT, 40 AMP IGBT MODULE 4 5 11 10 9 6 ELECTRICAL CHARACTERISTICS PER IGBT DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED PARAMETER SYMBOL MIN TYP MAX 600 - - - - 40 UNIT IGBT SPECIFICATIONS


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    MOD1008 /-20V PDF

    GT100NA120UX

    Abstract: dc to dc chopper using igbt GT-100 gt100na120
    Contextual Info: GT100NA120UX Vishay High Power Products "High Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 µs short circuit capability SOT-227 • Fully isolated package


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    GT100NA120UX OT-227 2002/95/EC OT-227 18-Jul-08 GT100NA120UX dc to dc chopper using igbt GT-100 gt100na120 PDF

    Contextual Info: Bulletin I27279 11/06 GB10XF120K IGBT SIXPACK MODULE Features VCES = 1200V • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC =13A • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ=150°C • HEXFRED Antiparallel Diode with Ultrasoft


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    I27279 GB10XF120K PDF

    MSK4454D

    Abstract: MSK4454G MSK4454S MSK4454U use igbt for 3 phase induction motor
    Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. M.S. KENNEDY CORP. 4454 10 AMP, 600 VOLT IGBT SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 600V,10 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 2.2°C/W (Each IGBT)


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    MIL-PRF-38534 25KHz MSK4454S MSK4454D MSK4454U MSK4454G MSK4454D MSK4454G MSK4454S MSK4454U use igbt for 3 phase induction motor PDF

    IPM STMicroelectronics

    Abstract: TN0107 SDIP-25L STGIPS10K60A
    Contextual Info: STGIPS10K60A IGBT intelligent power module IPM 10 A - 600 V - SDIP-25L molded Preliminary data Features • 600 V, 10 A 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ 3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull down


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    STGIPS10K60A SDIP-25L IPM STMicroelectronics TN0107 STGIPS10K60A PDF

    Contextual Info: Bulletin I27299 01/07 GB30XF60K IGBT SIXPACK MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 35A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ=150°C • HEXFRED Antiparallel Diode with Ultrasoft


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    I27299 GB30XF60K PDF

    Contextual Info: STGIPS10K60A 600 V - 10 A - SDIP-25L molded IGBT intelligent power module Preliminary data Features • 600 V, 10 A 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ 3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull down


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    STGIPS10K60A SDIP-25L PDF

    Contextual Info: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. M.S. KENNEDY CORP. 4354 10 AMP, 600 VOLT IGBT SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 600V,10 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 1.35°C/W (Each IGBT)


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    MIL-PRF-38534 25KHz MSK4354 PDF

    Contextual Info: VS-40MT120UHAPbF, VS-40MT120UHTAPbF www.vishay.com Vishay Semiconductors "Half Bridge" IGBT MTP Ultrafast NPT IGBT , 80 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient Available • 10 s short circuit capability


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    VS-40MT120UHAPbF, VS-40MT120UHTAPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    40MT120UHAPBF

    Abstract: ultrafast igbt 40MT120UHAP
    Contextual Info: 40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Ultrafast NPT IGBT , 80 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • Square RBSOA


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    40MT120UHAPbF, 40MT120UHTAPbF E78996 2002/95/EC 18-Jul-08 40MT120UHAPBF ultrafast igbt 40MT120UHAP PDF

    bridge rectifier driver

    Contextual Info: SK 10 GH 123 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT 5-" 5'-" & &= $ 3 10 4!      


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    10hyristor bridge rectifier driver PDF

    GT100DA120U

    Abstract: gt100da120 A5034 gt100 GT100DA
    Contextual Info: GT100DA120U Vishay High Power Products Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


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    GT100DA120U OT-227 2002/95/EC 18-Jul-08 GT100DA120U gt100da120 A5034 gt100 GT100DA PDF

    Contextual Info: 20MT120UFAPbF Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


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    20MT120UFAPbF E78996 2002/95/EC 18-Jul-08 PDF

    Contextual Info: 20MT120UFAPbF Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


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    20MT120UFAPbF E78996 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    RG 56

    Abstract: igbt 300V 10A datasheet
    Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 10 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


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    PDF

    Contextual Info: 2-Pack IGBT 1400V 300A 2MBI 300P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications


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    300P-140 PDF

    VS-GT400TH120N

    Contextual Info: VS-GT400TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 400 A FEATURES • Low VCE on trench IGBT technology • Low switching losses • 10 s short circuit capability • VCE(on) with positive temperature coefficient


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    VS-GT400TH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GT400TH120N PDF

    motor IG 2200 19 X 000 15 R

    Contextual Info: PD -5040 CPV364M4F PRELIMINARY IGBT SIP MODULE Fast IGBT 1 Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating 1 to 10 kHz


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    CPV364M4F 360Vdc, 08-Mar-07 motor IG 2200 19 X 000 15 R PDF

    Contextual Info: PD -5038 CPV363M4F PRELIMINARY IGBT SIP MODULE Fast IGBT 1 Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating 1 to 10 kHz


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    CPV363M4F 360Vdc, 08-Mar-07 PDF

    full bridge driver 600v

    Abstract: 20MT120UFP ultrafast igbt S610A
    Contextual Info: 20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


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    20MT120UFP E78996 2002/95/EC 18-Jul-08 full bridge driver 600v 20MT120UFP ultrafast igbt S610A PDF

    igbt sixpack

    Abstract: 95089 ECONO2-6PACK IGBT module
    Contextual Info: GB20XF60K Vishay High Power Products IGBT Sixpack Module, 21 A FEATURES • Low diode VF • 10 µs short circuit capability RoHS • Square RBSOA COMPLIANT • Low VCE on non punch through IGBT technology • HEXFRED antiparallel diode with ultrasoft reverse


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    GB20XF60K 18-Jul-08 igbt sixpack 95089 ECONO2-6PACK IGBT module PDF

    ir igbt 1200V 40A

    Abstract: IGBT 900V 80A 40MT120UH 40MT120UHT 1E-005 UJ-3600
    Contextual Info: I27126 rev. C 02/03 40MT120UH "HALF-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery


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    I27126 40MT120UH E78996) 20KHz ir igbt 1200V 40A IGBT 900V 80A 40MT120UH 40MT120UHT 1E-005 UJ-3600 PDF