IFX POWER Search Results

LR33050

Abstract: LR33050HC25 LR33000 R2010 mips processor R3010 mips processor AX2016 LR33050HC40 R2000 mips R2000 mips processor Enhanced Self-Embedding Processor Core
Contextual Info: LSI LOGIC LR33050 MIPS IFX Processor Preliminary Introduction The LR33050 M IP S IFX Integer and FloatingPoint A cce le rato r P ro ce sso r is part of LSI Logic's LR33000 M IP S Self-Em bedding pro­ ce sso r family. The LR33050 is a 32-bit Reduced Instruction Set Computer (R ISC ) p rocessor that

ddr2 ram

Abstract: 1 gb ddr2 ram ddr2 ram laptop gigabyte RAM DDR2 ddr2 ram laptop data sheet download DDR2-400 INFINEON TECHnology ddr2 ram datasheet DDR2-533 28011
Contextual Info: Infineon Introduces Innovative, Space-Saving and Power-Saving Memory Products for Mobile and Handheld Applications Munich, Germany – June 14, 2004 – Infineon Technologies AG FSE/NYSE: IFX today announced new memory products for mobile applications such as notebooks,

DUSLIC

Abstract: CODEC-SLIC 20-F TR57 DuSLIC modem
Contextual Info: Infineon Announces Industry’s Smallest, Full-Featured Dual Channel CODEC/SLIC Chipset Ideal for VoIP Applications San Jose/Munich, Germany, August 28, 2001 – Infineon Technologies FSE/NYSE: IFX , a leading provider of communications integrated circuits, announced today the

SHDSL chips

Abstract: shdsl transceiver SHDSL Echo Canceller G.SHDSL Industry Single-Chip Line Driver SHDSL PEB22623 501 PHOTO SHDSL Line Driver g991 SHDSL
Contextual Info: Infineon Extends Lead in SHDSL With the Industry’s First Low Power, SingleChip Single-Channel SHDSL Transceiver San Jose, August 14, 2001 –– Infineon Technologies FSE/NYSE: IFX , a leading supplier of communications integrated circuits, today announced the availability of

KEYFOB

Abstract: PMA51xx C166
Contextual Info: PMA71xx/PMA51xx SmartLEWISTM MCU IFX Software and Tools Support Software and Tools Overview Revision 1.0, 2009-11-19 Wireless Control Edition 2009-11-19 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.

dram structure

Abstract: 2240 6T SRAM micron sram
Contextual Info: Joint News Release by Infineon and Micron Infineon Technologies and Micron Technology Announce Cooperation to Develop ‘CellularRAM’ Munich, Germany/Boise, Idaho, USA, June 24, 2002 - Infineon Technologies AG FSE, NYSE: IFX and Micron Technology, Inc., (NYSE: MU) today announced they

G.SHDSL

Abstract: Metalink 20-F Infineon shdsl chip set
Contextual Info: Infineon and Metalink Drive G.SHDSL Interoperability Momentum San Jose, Calif. and Yakum, Israel, July 10, 2001 – Infineon Technologies FSE/NYSE: IFX , a leading supplier of communication IC solutions, and Metalink Ltd (NASDAQ:MTLK), a leading broadband access chip-set provider, today announced

Contextual Info: IFX Fiber Optics - DWDM Product Introduction NEW : MUX/DEMUX W/ Integrated PM P. Neumann FO ON 17.9.2001 Page 1 NEW Joint Product Development Infineon - Wavesplitter NEW New market challenges regarding further integration of DWDM functionality is answered by

smd Transistor 1117

Abstract: 1117 3.3 Transistor b 1117 c 1117 adj 1117 sot223 1117 1117 AT 1117 regulator 1117 A 33 Vr 1117
Contextual Info: Voltage Regulator IFX 1117 Data Sheet Features • • • • • • • Output voltage 3.3 V or adjustable 1.0 A output current Low drop voltage < 1.2 V @ 800 mA Short circuit protected Overtemperature protected Operating range up to 15 V Industrial type

EPX880-10

Abstract: altera epx740
Contextual Info: FLASHIogic Programmable Logic Device Family Features. • ■ Prelim inary Information ■ ■ ■ Formerly Intel's FLEXlogic iFX family High-performance programmable logic device (PLD) family SRAM-based logic w ith shadow EPROM or FLASH memory elements fabricated on 0.6- and 0.8-micron CMOS technology

128M-BIT

Abstract: idc 16m 128-MBIT
Contextual Info: Infineon Technologies Announces Availability of 128-Mbit Mobile-RAM in Sample Quantities; New Low-Power Memory Compliant with JEDEC Standard Munich, Germany – July 25, 2001 – Infineon Technologies FSE/NYSE: IFX today announced the availability of sample quantities of its 128-Mbit Mobile-RAM. Designed

HYB18M512

Contextual Info: . Home > Products > Packages > Green Products > Introduction On 27.01.2003 the European Parliament and the council adopted the directives: 2002/95/EC on the Restriction of the use of certain Hazardous Substances in electrical and electronic

c 1117 adj

Abstract: 1117 regulator 1117 1117 sot223 1117 A 33 marking 1117 1117 3.3 1117 voltage regulator IFX IC 1117v
Contextual Info: Voltage Regulator IFX 1117 Data Sheet Features • • • • • • • • Output voltage 3.3 V or adjustable 1.0 A output current Low drop voltage < 1.2 V @ 800 mA Short circuit protected Overtemperature protected Operating range up to 15 V Industrial type

ifx power

Contextual Info: Voltage Regulator IFX 1117 Data Sheet Features • • • • • • • • Output voltage 3.3 V or adjustable 1.0 A output current Low drop voltage < 1.2 V @ 800 mA Short circuit protected Overtemperature protected Operating range up to 15 V Industrial type

ibm ASIC SRAM

Abstract: IBM Microelectronics ASIC routers in Dax semico OC-768 US Marketing Services
Contextual Info: Infineon Technologies announces Availability of 256-Mbit Reduced Latency DRAM; New High Performance Memory Designed for High-Speed Networking Applications Munich, February 11, 2002 – Infineon Technologies AG FSE/NYSE: IFX today announced the availability of sample quantities of 256-Mbit Reduced Latency DRAM

IMZ3A

Abstract: veb12
Contextual Info: IMZ3A h 7 'y V 7k$ / I ransistors I M 7 ^ A 7 < v - u t 7 K ^ z ; e - ; i/ K t / H 7 Isolated Mini-Mold Device —^ /JNit-§-iSlliffl/General Small Signal Amp. • • ^ fé \r;£ 0 /D im e n s io n s Unit : mm 1) SMT (SC-59) t m —tfcïJKC PNP t N PN <T>21MCD =7> v 7.5 ifX-oT^&o

CFJC

Abstract: ic or 4071
Contextual Info: S îfi 5# Î4 TECHNICAL INFORMATIONS 7 ^ - ^ K S r IT O -220j £ r IT O -3Pj Insulated Package “ITO-220” and “ITO-3P” 7 K 3Ü IT O -2 2 0 , IT O -3 P < 7 V ? y ^ - > t± , '•& < z t ifx * <o t t i t &, i A' &, m m m r± v a c 2 * '! W ith an insulated type ITO -220 or IT 0 " 3 P package, except

BSB280N15NZ3 G

Contextual Info: n-Channel Power MOSFET OptiMOS BSB280N15NZ3 G Data Sheet 2.4, 2011-07-20 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB280N15NZ3 G 1 Description OptiMOS™150V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together

Contextual Info: n-Channel Power MOSFET OptiMOS BSF077N06NT3 G Data Sheet 1.3, 2011-03-01 Preliminary Industrial & Multimarket OptiMOS™ Power-MOSFET BSF077N06NT3 G 1 Description OptiMOS™60V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together

BSB150N15NZ3G

Contextual Info: n-Channel Power MOSFET OptiMOS BSB150N15NZ3 Data Sheet 2.3, 2011-03-01 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB150N15NZ3 G 1 Description OptiMOS™150V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together

Contextual Info: n-Channel Power MOSFET OptiMOS BSZ018NE2LS Data Sheet 2.0, 2011-03-29 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSZ018NE2LS 1 Description OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together

Contextual Info: n-Channel Power MOSFET OptiMOS BSB056N10NN3 G Data Sheet 2.3, 2011-02-28 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB056N10NN3 G 1 Description OptiMOS™100V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together

BSC010NE2LS

Abstract: 010NE2Ls BSC010nE2LS1 IEC61249-2-21 JESD22
Contextual Info: n-Channel Power MOSFET OptiMOS BSC010NE2LS Data Sheet 0.4, 2010-02-23 Target Industrial & Multimarket OptiMOS™ Power-MOSFET BSC010NE2LS 1 Description OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together

BSZ0909NS

Abstract: IEC61249-2-21 JESD22
Contextual Info: n-Channel Power MOSFET OptiMOS BSZ0909NS Data Sheet 2.0, 2010-05-31 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSZ0909NS 1 Description OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together