IFP4N60 Search Results

IFP4N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IFP4N60 Abstract: IFP4 Contextual Info: IFP4N60 N-Channel MOSFET Features • RDS on (Max 2.5 Ω)@VGS=10 V • Gate Charge (Typical 15 nC) • Maximum Junction Temperature Range (150 °C) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25 °C)	Original	IFP4N60 300us, IFP4N60-TSe 576x463 IFP4N60 IFP4	PDF
IL311ANM Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D Contextual Info: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.	Original		PDF

Catalog Datasheet

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Document Tags

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IFP4N60

Abstract: IFP4
Contextual Info: IFP4N60 N-Channel MOSFET Features • RDS on (Max 2.5 Ω)@VGS=10 V • Gate Charge (Typical 15 nC) • Maximum Junction Temperature Range (150 °C) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25 °C)

Original

IFP4N60 300us, IFP4N60-TSe 576x463 IFP4N60 IFP4

PDF

IL311ANM

Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
Contextual Info: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.

Original

PDF