IFM VS 0200 Search Results
IFM VS 0200 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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AM27C010-200DM/B |
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AM27C010 - CMOS EPROM 1 Megabit (128K x 8) |
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CO-058BNCX200-200 |
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Amphenol CO-058BNCX200-200 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 200ft | |||
SF-NDYYYH0002-002M |
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Amphenol SF-NDYYYH0002-002M 2m (6.6') 400GbE QSFP-DD Cable - Amphenol 400-Gigabit Ethernet Passive Copper QSFP Double Density Cable (Dual Entry 27 AWG) - QSFP-DD to QSFP-DD | |||
SF-NDVVYG0002-002M |
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Amphenol SF-NDVVYG0002-002M 2m (6.6') 400GbE OSFP Cable - Amphenol 400-Gigabit Ethernet Passive Copper OSFP Cable (28 AWG) – OSFP to OSFP 2m (6.6') | |||
10106130-2002001LF |
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PwrBlade+® , Power Connectors, 2HP+8S STB, Vertical, Receptacle. |
IFM VS 0200 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IFM VS 0100
Abstract: schema relais sonde ifm VS 0200 relais schema de branchement relais schema data book electronique transistor BU 110 BK-5 SCHEMA BK relay
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\DATEN\300\DB-FORM--PZD/01/09/94 IFM VS 0100 schema relais sonde ifm VS 0200 relais schema de branchement relais schema data book electronique transistor BU 110 BK-5 SCHEMA BK relay | |
IFM VS 0200
Abstract: data book electronique SF1204 sonde de temperature electronique sonde M12X1 Maxim100 sonde type k
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SF1204 SFM12ABB/US M12x1 M12-Steckverbindur \DATEN\300\DB-FORM--PZD/01/10/94 IFM VS 0200 data book electronique SF1204 sonde de temperature electronique sonde M12X1 Maxim100 sonde type k | |
IFM VS 0200
Abstract: data book electronique sonde type k SFR12ABB sonde sonde de temperature bu 1 monitor schema
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SFR12ABB/US M12x1 \DATEN\300\DB-FORM--PZD/01/02/95 IFM VS 0200 data book electronique sonde type k SFR12ABB sonde sonde de temperature bu 1 monitor schema | |
IGBT abbContextual Info: VCE IC = = 1200 V 200 A IGBT Module LoPak4 SPT 5SNS 0200V120100 PRELIMINARY • • • • • Doc. No. 5SYA1526-01 Sep. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package |
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0200V120100 5SYA1526-01 Po200V120100 CH-5600 IGBT abb | |
Contextual Info: VCE IC = = 1200 V 200 A IGBT Module LoPak4 SPT 5SNS 0200V120100 PRELIMINARY • • • • • Doc. No. 5SYA1526-01 Jun. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package |
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0200V120100 5SYA1526-01 CH-5600 | |
Contextual Info: 1SS88 Silicon Schottky Barrier Diode for CATV Balanced Mixer REJ03G0615-0200 Previous: ADE-208-187A Rev.2.00 May 09, 2005 Features • Low capacitance. (C = 0.97 pF max) • High reliability with glass seal. Ordering Information Type No. 1SS88 Cathode band |
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1SS88 REJ03G0615-0200 ADE-208-187A) 1SS88 DO-35 GRZZ0002ZB-A DO-35) Unit2607 | |
Contextual Info: WESTCODE An Date:- 22 Sept, 2006 Data Sheet Issue:- 1 IXYS Company Rectifier Diode Types W4534N#020 to W4534N#060 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 200–600 V VRSM Non-repetitive peak reverse voltage, (note 1) |
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W4534N | |
W4534NC
Abstract: W4534N W453 100A249
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W4534N W4534NC W453 100A249 | |
HSD278
Abstract: PUSF0002ZB-A
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HSD278 REJ03G0605-0200 ADE-208-1015A) PUSF0002ZB-A Tj5-900 Unit2607 HSD278 PUSF0002ZB-A | |
HSB123Contextual Info: HSB123 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0546-0200 Previous: ADE-208-487A Rev.2.00 Mar 04, 2005 Features • Low capacitance, proof against high voltage. • Fast recovery time. • CMPAK package is suitable for high density surface mounting and high speed assembly. |
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HSB123 REJ03G0546-0200 ADE-208-487A) PTSP0003ZB-A Unit2607 HSB123 | |
HSB83Contextual Info: HSB83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0187-0200Z Previous: ADE-208-489A Rev.2.00 Mar.22.2004 Features • High reverse voltage. (VR = 250 V) • CMPAK package is suitable for high density surface mounting and high speed assembly. |
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HSB83 REJ03G0187-0200Z ADE-208-489A) HSB83 | |
HSB2838Contextual Info: HSB2838 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0549-0200 Previous: ADE-208-486A Rev.2.00 Mar 04, 2005 Features • Fast recovery time. • CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information |
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HSB2838 REJ03G0549-0200 ADE-208-486A) PTSP0003ZB-A t5-900 Unit2607 HSB2838 | |
Contextual Info: HSU83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0189-0200Z Previous: ADE-208-307A Rev.2.00 Mar.22.2004 Features • High reverse voltage. (VR = 250 V) • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly. |
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HSU83 REJ03G0189-0200Z ADE-208-307A) HSU83 | |
HSB124SContextual Info: HSB124S Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0547-0200 Previous: ADE-208-488A Rev.2.00 Mar 04, 2005 Features • Low reverse current. (IR = 0.01 µA max) • CMPAK package is suitable for high density surface mounting and high speed assembly. |
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HSB124S REJ03G0547-0200 ADE-208-488A) PTSP0003ZB-A rectifi5-900 Unit2607 HSB124S | |
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6000A 16 1
Abstract: m2408n
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M2408N SM02-06CXC504 M1825NC020-060 6000A 16 1 | |
Contextual Info: EVALUATION LABORATORY Rating Report - Issue 2 Date - 23 July, 2004 Origin - PAR 985 Total Pages - 13 Fast Recovery Diode Types M2408N#020 to M2408N#060 Old Type No.: SM02-06CXC504 Author EL Check/Approval QA Approval S & M Approval N. A. Tarling Abstract The M2408N#020-060 fast recovery diode consists of a 50mm diameter silicon slice manufacturing |
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M2408N SM02-06CXC504 M1825NC020-060 | |
MBN1200E33D
Abstract: ge 521
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IGBT-SP-02005 MBN1200E33D 000cycles) MBN1200E33D ge 521 | |
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-02005 R9 MBN1200E33D Silicon N-channel IGBT FEATURES High speed, low loss IGBT module. Low driving power due to low input capacitance MOS gate. Low noise due to ultra soft fast recovery diode. High reliability, high durability module. |
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IGBT-SP-02005 MBN1200E33D 000cycles) | |
HRC0201AContextual Info: HRC0201A Silicon Schottky Barrier Diode for Rectifying REJ03G0618-0200 Rev.2.00 Jan 09, 2009 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Flat Lead Package UFP is suitable for compact and high-density surface mount design. |
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HRC0201A REJ03G0618-0200 HRC0201ATRF PWSF0002ZA-A REJ03G0618-0200 HRC0201A | |
DSA00285350
Abstract: HRL0103C HRL0103C-N hrl0103
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HRL0103C REJ03G0367-0200 HRL0103C-N) HRL0103C-N PXSF0002ZA-A REJ03G0367-0200 DSA00285350 HRL0103C HRL0103C-N hrl0103 | |
HRU0103C
Abstract: PTSP0002ZA-A
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HRU0103C REJ03G0071-0200 REJ03G0071-0200 PTSP0002ZA-A HRU0103C PTSP0002ZA-A | |
HRC0103CContextual Info: HRC0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0069-0200 Rev.2.00 Apr 08, 2008 Features • Low reverse voltage drop and suitable for high efficiency reverse current. • Ultra small Flat Package UFP is suitable for surface mount design. Ordering Information |
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HRC0103C REJ03G0069-0200 REJ03G0069-0200 PWSF0002ZA-A HRC0103C | |
Contextual Info: HRD0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0070-0200 Rev.2.00 Mar 05, 2007 Features • Low reverse voltage drop and suitable for high efficiency reverse current. • Lineup of environmental friendly Halogen free type HRD0103C-N • Super small Flat Lead Package (SFP) is suitable for surface mount design. |
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HRD0103C REJ03G0070-0200 HRD0103C-N) HRD0103C HRD0103C-N PUSF0002ZB-A | |
Contextual Info: Spec.No.IGBT-SP-02008 R5 IGBT MODULE MBN900D45A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES High speed, low loss IGBT module. Low driving power due to low input capacitance MOS gate. Low noise due to ultra soft fast recovery diode. |
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IGBT-SP-02008 MBN900D45A 000cycles) |