IE 1CL3 Search Results

IE-1CL3

Abstract: 1CL3 IE 1CL3
Contextual Info: Waitrony Infrared Emitting Diode_ Module No.: IE-1CL3 1. General Description: Dimensions IE-1CL3 is a high output power GaAlAs infrared light emitting diode, mounted in a low-cost, end looking ceramic package. It emits narrow band of radiation peaking at 940nm and is

2SC2233

Contextual Info: 2SC2233 SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. 1CL3MAX. ¡¿ & 6 ± a e dT x FEATURES: I . ä i! . Large Collector Current Capability. . Large Collector Power Dissipation Capability. tfíi_ 1.5M AX. MAXIMUM RATINGS Ta=25°C

Contextual Info: KODENSHI CORP S T -IC L 3 H £ V Z t - b ? 5 7 55E D ^ x A b « L • S245b0a DDQ014S 7 ■ tz m U S t& n '> ' a DIMENSIONS (Unit:mm) 'i'm x’& M t e v t < n x \ r u - V i tz u tz y s i« » t= * a - e f . The ST-1CL3H is a high sensitivity NPN silicon

2sa1307

Contextual Info: T oshiba -c d i s c r e t ë / o p t o } 9097250 T O S H IB A Tm 7ESa 56 ^ C D IS C R E T E/O P T O 730^ 0^ 5 1 1 '? 2SA1307 SILICON PNP EPITAXIAL TYPE PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. 1CL3MAX. 7.0 3 .2 ± Û 2 A FEATURES: . Low Saturation Voltage

2SC3345

Abstract: 2SA1328 AC75
Contextual Info: T O S H I B A -C D IS C R E T E / O P T O J 90 972 50 T OS HI BA Sb »^^0^7250 0007700 S DISCRETE/OPTO SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1CL3MAX, 0 3 .6 * 0 .2 FEATURES: • VcE(sat)~0*^V(Max.) (at Ic=6A)

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1327 U nit in mm STROBE FLASH APPLICATIONS. AUDIO POWER AMPLIFIER APPLICATIONS. • • • • 1CL3MAX. MIN. hpE of 70 at —2V, —8A —10A Rated Collector Current MAX. V cE (sat)of -0.5V at -8 A Ic 20W at 25°C Case Temperature

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1327 STROBO FLASH APPLICATIONS. Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 1Cl3 MAX. FEATURES: . MIN. hpg of 70 at -2V, -8A . -10A Rated Collector Current . MAX. VcE sat of -0.5V . 20W at -8A Ic at 25°C Case Temperature

Contextual Info: 2SC3257 SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION. 1CL3MAX. FEATURES: . Excellent Switching Times : tr= l .0/is Max. , t f = l .0#s( M a x . ) at I^=6A

2SD5250

Abstract: 2SD525 transistor 2sd525 a935 2SD525-Y 2SD525R 2SD525-0 AC75 A 935 2SD525Y
Contextual Info: * 2/ ' J D V N P N = » E I R ^ + H B h 5 > 2; ^ SILICON NPN T RIPLE DIFFUSED M ESA TRANSISTOR o % o u m m 2 s d 525 m Power Unit Amplifier Applications in 1CL3MAX. É f¿ 3 .6 ± X Z O e-î • x m z i H i - p i t ^ y m t i S K i s v t - r •. • ¡SiHET-fo

Contextual Info: MMA-495933-Q5 4.9 – 5.9 GHz Linear Power Amplifier Preliminary Data Sheet June 2007 Features: • • • • • • • 46 dBm IP3 33 dBm P1dB 26 dBm Pout @ 2.0% EVM 10.5 dB Gain Input and Output Matched to 50 Ω for Easy Cascade RoHS Compliant Surface Mount QFN Package

SMU200A

Contextual Info: MMA-495933-Q5 4.9 – 5.9 GHz Linear Power Amplifier Preliminary Data Sheet June 2007 Features: • Frequency Range: 4.9 to 5.9 GHz • 46 dBm IP3 • 33 dBm P1dB • 26 dBm Pout @ 2.0% EVM • 10.5 dB Gain • Input and Output Matched to 50 Ω for Easy Cascade

2SD1052A

Abstract: AC75 2sd1052
Contextual Info: TOSHIBA -CDISCRETE/OPTÔ3- ^ D F | T G T ? a S 0 □□□7flS2 b | ~ y 9097250 TOSHIBA <DIS CR E TE /O PT O 56C S IL IC O N NPN T R IP L E D IF F U SE D TYPE PCT PROCESS) D 7 *- 07852 2 S D 1 5 2 A Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS .