IDC06S60CE Search Results

Contextual Info: IDC06S60CE 2nd generation thinQ!TM SiC Schottky Diode Features: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

MS 1117

Abstract: IEC60721-3-3 IEC60721 Storage of Products Supplied by Infineon Technologies IDC06S60CE
Contextual Info: IDC06S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching