ICES 003 CLASS B Search Results

TACAN

Contextual Info: AVD0.5S NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: A The ASI AVD0.5S is Designed for Class A, DME/TACAN Applications up to 1150 MHz. 45° C E B E B FEATURES: C D J • Class A Operation • PG = 10 dB at 0.5 W/1150 MHz • Omnigold Metalization System

ic 245

Abstract: TACAN ASI10558 AVD035F DSA0029008 724G
Contextual Info: AVD035F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B The ASI AVD035F is a medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. A .100 X 45° ØD C B E FEATURES: F G H • Class C Operation • PG = 10 dB at 35 W/1150 MHz

ic 006

Abstract: SD8250 F B J22
Contextual Info: SD8250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N B E C G F I Q M A XIM U M M IN IM U M D IM in ch e s / m m in ch e s / m m .140 / 3.56 A .110 / 2.80 B .110 / 2.80 .395 / 10.03 .407 / 10.34 .193 / 4.90 E MAXIMUM RATINGS .230 / 5.84

Contextual Info: MLN2037F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MLN2037F is Designed for Class A Linear Applications up to 2.0 GHz. A ØD B FEATURES: E • Class A Operation • PG = 5.0 dB at 5.0 W/2.0 GHz • Omnigold Metalization System

Contextual Info: PD- 91875A IRG4CC81KB IRG4CC81KB IGBT Die in Wafer Form C 600 V Size 8.1 Ultra-Fast Speed Short Circuit Rated G 6" Wafer E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage

MLN2037F

Abstract: D 5888 s transistor 1548 b D 5888 equivalent transistor c 5888 ASI10635
Contextual Info: MLN2037F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MLN2037F is Designed for Class A Linear Applications up to 2.0 GHz. A ØD FEATURES: B E • Class A Operation • PG = 5.0 dB at 5.0 W/2.0 GHz • Omnigold Metalization System

AVD075F

Abstract: ic 245 TACAN ASI10560
Contextual Info: AVD075F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B The ASI AVD075F is designed for applications requiring Class C, High Peak Power and low duty cycle such as IFF, DME and TACAN A .100 X 45° ØD C B E FEATURES: F G H • Internal Input Matching Network

BLW80

Contextual Info: BLW80 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: The ASI BLW80 is Designed for Class A,B or C UHF & VHF Communication applications up to 470 MHz. A 45° C E B E B FEATURES: C D • PG = 8.0 dB Typical at 470 MHz • Omnigold Metallization System

AVF150

Abstract: TACAN ASI10570 1402 Transistor
Contextual Info: AVF150 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG B DESCRIPTION: A .100 X 45° The ASI AVF150 is a high power Class C transistor, Designed forIFF/DME/TACAN Applications in 960-1215 MHz. ØD .088 x 45° CHAMFER C B FEATURES: E F • Internal Input/Output Matching Networks

MSC81035M

Abstract: TACAN TACAN 41
Contextual Info: MSC81035M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC81035M is a common base device, medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. PACKAGE STYLE .250 2L FLG B A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES:

BLW81

Contextual Info: BLW81 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: The ASI BLW81 is Designed for Class A,B or C UHF & VHF Communications A 45° C E B FEATURES: E B • PG = 6 dB Typical at 470 MHz • Omnigold Metallization System C D J E I F

Contextual Info: BLU20/12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLU20/12 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 6.5 dB at 20 W/470 MHz • Omnigold Metalization System

Rack PDU

Abstract: AP7998
Contextual Info: APC World Wide[ Change] HomeProducts SupportServices Selectors How to Buy Switched Rack PDU Rack PDU, Switched, Zero U,12.5kW,208V, 21 C13&(3)C19; 10' Cord AP7998 Email Technical Specifications Printer Friendly AP7998 APC Switched Rack PDU , Input: 208V 3PH ,

ASI10541

Abstract: ASI4000
Contextual Info: ASI4000 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 4000 is Designed for General Purpose Class C Power Amplifier Applications up to 4200 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 5 dB min. at 0.5 W / 4,000 MHz

SD1407

Abstract: 1257 transistor
Contextual Info: SD1407 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1407 is a class AB common Emitter Transistor Designed for broadband amplifier operations up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° A • PG = 15 dB min. at 125 W/30 MHz • High linear power output

SD1477

Contextual Info: SD1477 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1477 is Designed for 12.5 V, Class C High-Band Applications up to 175 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 6.0 dB at 100 W/175 MHz • Omnigold Metalization System

SD1480

Contextual Info: SD1480 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1480 is Designed for Class C, 28 V High Band Applications up to 175 MHz. FEATURES: PACKAGE STYLE .500 6L FLG • Internal Input Matching Network • Common Emitter • PG = 9.0 dB at 125 W/175 MHz

BLW96

Abstract: blw96 equivalent amplifier blw96 2464g BLW96 HF power amplifier
Contextual Info: BLW96 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW96 is Designed for High Linearity Class A, AB HF Power Amplifier Applications up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 14 dB Typical at 200 W/28 MHz • IMD3 = -32 dBc Typ. at 220 W PEP

LP9002

Abstract: DHHS ICES-003 CSA22 LP9000 LP9002L-F2 DHHS 21CFR
Contextual Info: LightPulse LP9002L 2Gb/s Fibre Channel PCI Host Bus Adapter The LightPulse™ LP9002L Fibre Channel PCI host adapter provides support for 2Gb/s Fibre Channel data rates, delivering the industry’s highest performance. The LP9002L features automatic speed negotiation capability

VHB40-12F5

Contextual Info: VHB40-12F5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The VHB40-12F5 is Designed for Class C Amplifier Applications in VHF Mobile Radios. PACKAGE STYLE .500 6L FLG 3 2x Ø N FU LL R D 2 B MAXIMUM RATINGS E .725/18,42 F G M K H 5.0 A 36 V VCBO A 3 • PG = 9.5 dB Typ. at 40 W /175 MHz

16C654

Abstract: ices 003 class b
Contextual Info: AccelePort Xr 920 Multiport Serial Cards Serial card designed for a wide range of applications allows a variety of parameter settings, superior CPU utilization, fast data throughput, and extra surge protection on every pin. Overview The AccelePort Xr 920 family is one of the industry’s best

CBSL150

Abstract: ASI10586
Contextual Info: CBSL150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL150 is Designed for 900 MHz Class AB Cellular Base Station Amplifiers. PACKAGE STYLE .400 BAL FLG C .080x45° FEATURES: A B FULL R (4X).060 R • Internal Input/Output Matching • PG = 9.0 dB Typ. at 150 W/ 900 MHz

MZ0912B50Y

Contextual Info: MZ0912B50Y NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MZ0912B50Y is Designed for General Purpose Class C Power Amplifier Applications up to 1215 MHz. PACKAGE STYLE .400 2L FLG L N FEATURES: J O A B • PG = 7.0 dB min.at 50 W / 1215 MHz • Common Base

Contextual Info: i, Una, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. SD1434 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS 470 MHz 12.5 VOLTS COMMON EMITTER POUT = 45 W MIN. WITH 5.0 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1434 BRANDING SD1434 PIN CONNECTION