ICES 003 CLASS B Search Results

ICES 003 CLASS B Result Highlights (5)

Part	Manufacturer	Description	Download
86093488109758E1LF	Amphenol Communications Solutions	Receptacle, Vertical, Solder-Eyelet, Style C, 48 ways, Class II	PDF
86094327614745ELF	Amphenol Communications Solutions	DIN Straight Header Solder-to-Board Style R/2 32 ways, Class III	PDF
86094647894745E1LF	Amphenol Communications Solutions	DIN Straight Header Press-Fit Style R 64 ways, Class III, Tail Length: 4.20mm	PDF
86094641113765E1LF	Amphenol Communications Solutions	DIN Right Angle Header Solder-to-Board Style C64 ways, Class I	PDF
86093967894765E1LF	Amphenol Communications Solutions	DIN Straight Header Press-Fit Style R 96 ways, Class I, Tail Length: 4.20mm	PDF

ICES 003 CLASS B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TACAN Contextual Info: AVD0.5S NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: A The ASI AVD0.5S is Designed for Class A, DME/TACAN Applications up to 1150 MHz. 45° C E B E B FEATURES: C D J • Class A Operation • PG = 10 dB at 0.5 W/1150 MHz • Omnigold Metalization System	Original		PDF
ic 245 Abstract: TACAN ASI10558 AVD035F DSA0029008 724G Contextual Info: AVD035F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B The ASI AVD035F is a medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. A .100 X 45° ØD C B E FEATURES: F G H • Class C Operation • PG = 10 dB at 35 W/1150 MHz	Original	AVD035F AVD035F ASI10558 ic 245 TACAN ASI10558 DSA0029008 724G	PDF
ASI10587 Abstract: FMB075 Contextual Info: FMB075 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB075 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: E FULL R • Class C Operation • PG = 10 dB at 75 W/108 MHz • Omnigold Metalization System	Original	FMB075 FMB075 112x45° ASI10587 ASI10587	PDF
TP9380 Abstract: transistor j 108 Contextual Info: TP9380 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TP9380 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: E FULL R • Class C Operation • PG = 10 dB at 75 W/108 MHz • Omnigold Metalization System	Original	TP9380 TP9380 112x45° transistor j 108	PDF
ic 006 Abstract: SD8250 F B J22 Contextual Info: SD8250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N B E C G F I Q M A XIM U M M IN IM U M D IM in ch e s / m m in ch e s / m m .140 / 3.56 A .110 / 2.80 B .110 / 2.80 .395 / 10.03 .407 / 10.34 .193 / 4.90 E MAXIMUM RATINGS .230 / 5.84	Original	SD8250 SD8250 ic 006 F B J22	PDF
Contextual Info: MLN2037F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MLN2037F is Designed for Class A Linear Applications up to 2.0 GHz. A ØD B FEATURES: E • Class A Operation • PG = 5.0 dB at 5.0 W/2.0 GHz • Omnigold Metalization System	Original	MLN2037F MLN2037F ASI10635	PDF
for IR IGBT die Abstract: 300C IRG4CC71KB IRG4PSC71K MIL-HDBK-263 Contextual Info: PD- 91834A IRG4CC71KB IRG4CC71KB IGBT Die in Wafer Form C 600 V Size 7.1 Ultra-Fast Speed Circuit Rated Rated G 6" Wafer E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage	Original	1834A IRG4CC71KB IRG4CC71KB for IR IGBT die 300C IRG4PSC71K MIL-HDBK-263	PDF
Contextual Info: PD- 91875A IRG4CC81KB IRG4CC81KB IGBT Die in Wafer Form C 600 V Size 8.1 Ultra-Fast Speed Short Circuit Rated G 6" Wafer E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage	Original	1875A IRG4CC81KB IRG4CC81KB	PDF
AVD002F Abstract: TACAN ASI10552 Contextual Info: AVD002F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B A The ASI AVD002F is Designed for Class C, DME/TACAN Applications up to 1150 MHz. .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES: • Internal Input Matching Network • PG = 9.0 dB at 2.0 W/1150 MHz	Original	AVD002F AVD002F ASI10552 TACAN ASI10552	PDF
TACAN Abstract: ASI10562 AVD090F Contextual Info: AVD090F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B A The ASI AVD090F is Designed for Class C, DME/TACAN Applications up to 1150 MHz. .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES: • Internal Input Matching Network • PG = 8.5 dB at 90 W/1150 MHz	Original	AVD090F AVD090F ASI10562 TACAN ASI10562	PDF
MLN2037F Abstract: D 5888 s transistor 1548 b D 5888 equivalent transistor c 5888 ASI10635 Contextual Info: MLN2037F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MLN2037F is Designed for Class A Linear Applications up to 2.0 GHz. A ØD FEATURES: B E • Class A Operation • PG = 5.0 dB at 5.0 W/2.0 GHz • Omnigold Metalization System	Original	MLN2037F MLN2037F D 5888 s transistor 1548 b D 5888 equivalent transistor c 5888 ASI10635	PDF
AVD075F Abstract: ic 245 TACAN ASI10560 Contextual Info: AVD075F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B The ASI AVD075F is designed for applications requiring Class C, High Peak Power and low duty cycle such as IFF, DME and TACAN A .100 X 45° ØD C B E FEATURES: F G H • Internal Input Matching Network	Original	AVD075F AVD075F ASI10560 ic 245 TACAN ASI10560	PDF
BLW80 Contextual Info: BLW80 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: The ASI BLW80 is Designed for Class A,B or C UHF & VHF Communication applications up to 470 MHz. A 45° C E B E B FEATURES: C D • PG = 8.0 dB Typical at 470 MHz • Omnigold Metallization System	Original	BLW80 BLW80	PDF
AVF150 Abstract: TACAN ASI10570 1402 Transistor Contextual Info: AVF150 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG B DESCRIPTION: A .100 X 45° The ASI AVF150 is a high power Class C transistor, Designed forIFF/DME/TACAN Applications in 960-1215 MHz. ØD .088 x 45° CHAMFER C B FEATURES: E F • Internal Input/Output Matching Networks	Original	AVF150 AVF150 ASI10570 TACAN ASI10570 1402 Transistor	PDF

MSC81035M Abstract: TACAN TACAN 41 Contextual Info: MSC81035M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC81035M is a common base device, medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. PACKAGE STYLE .250 2L FLG B A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES:	Original	MSC81035M MSC81035M TACAN TACAN 41	PDF
BLW81 Contextual Info: BLW81 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: The ASI BLW81 is Designed for Class A,B or C UHF & VHF Communications A 45° C E B FEATURES: E B • PG = 6 dB Typical at 470 MHz • Omnigold Metallization System C D J E I F	Original	BLW81 BLW81	PDF
Contextual Info: BLU20/12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLU20/12 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 6.5 dB at 20 W/470 MHz • Omnigold Metalization System	Original	BLU20/12 BLU20/12	PDF
Rack PDU Abstract: AP7998 Contextual Info: APC World Wide[ Change] HomeProducts SupportServices Selectors How to Buy Switched Rack PDU Rack PDU, Switched, Zero U,12.5kW,208V, 21 C13&(3)C19; 10' Cord AP7998 Email Technical Specifications Printer Friendly AP7998 APC Switched Rack PDU , Input: 208V 3PH ,	Original	AP7998 AP7998 CS8365C Rack PDU	PDF
ASI10541 Abstract: ASI4000 Contextual Info: ASI4000 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 4000 is Designed for General Purpose Class C Power Amplifier Applications up to 4200 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 5 dB min. at 0.5 W / 4,000 MHz	Original	ASI4000 CHARACTE165 ASI10541 ASI4000	PDF
AM1011-075 Contextual Info: AM1011-075 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AM1011-075 is a high power Class C transistor designed for L-Band Avionics pulse output and driver applications. PACKAGE STYLE .400 2L FLG A 2xB I • Internal Input/Output Matching Networks	Original	AM1011-075 AM1011-075	PDF
cbsl100 Abstract: ASI10585 018j TRANSISTOR 1335 Contextual Info: CBSL100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL100 is Designed for Class AB, Cellular Base Station Applications up to 960 MHz. PACKAGE STYLE .400 BAL FLG C .080x45° A B FULL R FEATURES: (4X).060 R E • Internal Input/Output Matching Network	Original	CBSL100 CBSL100 080x45° ASI10585 ASI10585 018j TRANSISTOR 1335	PDF
D 1803 TRANSISTOR Abstract: ASI10575 AVF450 Contextual Info: AVF450 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG A DESCRIPTION: 2xB The ASI AVF450 is Designed for Class C, IFF Applications up to 1090 MHz. I N DIM M IN IM UM M A X IM UM inches / m m inches / m m A .135 / 3.43 .145 / 3.68 B .100 / 2.54 .120 / 3.05	Original	AVF450 AVF450 D 1803 TRANSISTOR ASI10575	PDF
Contextual Info: VHB100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB100-12 is Designed for 12.5 V, Class C High-Band Applications up to 175 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 6.0 dB at 100 W/175 MHz • Omnigold Metalization System	Original	VHB100-12 VHB100-12 ASI10719	PDF
SD1407 Abstract: 1257 transistor Contextual Info: SD1407 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1407 is a class AB common Emitter Transistor Designed for broadband amplifier operations up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° A • PG = 15 dB min. at 125 W/30 MHz • High linear power output	Original	SD1407 SD1407 112x45° 1257 transistor	PDF

ICES 003 CLASS B Search Results

ICES 003 CLASS B Result Highlights (5)

ICES 003 CLASS B Datasheets Context Search

TACAN

ic 245

ASI10587

TP9380

ic 006

for IR IGBT die

AVD002F

TACAN

MLN2037F

AVD075F

BLW80

AVF150

MSC81035M

BLW81

Rack PDU

ASI10541

AM1011-075

cbsl100

D 1803 TRANSISTOR

SD1407