ICES 003 CLASS B Search Results

ICES 003 CLASS B Result Highlights (4)

Part	Manufacturer	Description
LM4673SDBD/NOPB	Texas Instruments	Filterless, 2.65W, Mono, Class D Audio Power Amplifier
TPA311DGNR	Texas Instruments	350-mW Mono Class-AB Audio Amplifier 8-MSOP-PowerPAD
TPA311DGN	Texas Instruments	350-mW Mono Class-AB Audio Amplifier 8-MSOP-PowerPAD
TAS2557YZT	Texas Instruments	5.7-W Class-D Mono Audio Amplifier with Class-H Boost and Speaker Sense 42-DSBGA -40 to 85

ICES 003 CLASS B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
AVD015F Abstract: TACAN ASI10556 Contextual Info: AVD015F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B The ASI AVD015F is Designed for Class C, DME/TACAN Applications up to 1150 MHz. A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES: • Class C Operation • PG = 10 dB at 15 W/1150 MHz	Original	AVD015F AVD015F ASI10556 TACAN ASI10556	PDF
TACAN Contextual Info: AVD0.5S NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: A The ASI AVD0.5S is Designed for Class A, DME/TACAN Applications up to 1150 MHz. 45° C E B E B FEATURES: C D J • Class A Operation • PG = 10 dB at 0.5 W/1150 MHz • Omnigold Metalization System	Original		PDF
ASI10691 Contextual Info: UML3 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: A The ASI UML3 is Designed for 45° C High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment. E B E B C D J FEATURES: E • Class C Operation • PG = 12 dB at 3.0 W/400 MHz	Original	ASI10691 ASI10691	PDF
ic 245 Abstract: TACAN ASI10558 AVD035F DSA0029008 724G Contextual Info: AVD035F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B The ASI AVD035F is a medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. A .100 X 45° ØD C B E FEATURES: F G H • Class C Operation • PG = 10 dB at 35 W/1150 MHz	Original	AVD035F AVD035F ASI10558 ic 245 TACAN ASI10558 DSA0029008 724G	PDF
ASI10587 Abstract: FMB075 Contextual Info: FMB075 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB075 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: E FULL R • Class C Operation • PG = 10 dB at 75 W/108 MHz • Omnigold Metalization System	Original	FMB075 FMB075 112x45° ASI10587 ASI10587	PDF
TP9380 Abstract: transistor j 108 Contextual Info: TP9380 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TP9380 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: E FULL R • Class C Operation • PG = 10 dB at 75 W/108 MHz • Omnigold Metalization System	Original	TP9380 TP9380 112x45° transistor j 108	PDF
ic 006 Abstract: SD8250 F B J22 Contextual Info: SD8250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N B E C G F I Q M A XIM U M M IN IM U M D IM in ch e s / m m in ch e s / m m .140 / 3.56 A .110 / 2.80 B .110 / 2.80 .395 / 10.03 .407 / 10.34 .193 / 4.90 E MAXIMUM RATINGS .230 / 5.84	Original	SD8250 SD8250 ic 006 F B J22	PDF
tp9380 Contextual Info: TP93805 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TP9380 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: E FULL R • Class C Operation • PG = 10 dB at 75 W/108 MHz • Omnigold Metalization System	Original	TP93805 TP9380 112x45°	PDF
MLN1037F Abstract: ASI10628 Contextual Info: MLN1037F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MLN1037F is Designed for Class A Linear Applications up to 1.0 GHz. A ØD B FEATURES: .060 x 45° CHAMFER C E • Class A Operation • PG = 10 dB at 5.0 W/1.0 GHz • Omnigold Metalization System	Original	MLN1037F MLN1037F ASI10628	PDF
ASI10589 Abstract: FMB175 c 108 m 229 Contextual Info: FMB175 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB175 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN • Class C Operation • PG = 10 dB at 175 W/108 MHz • Omnigold Metalization System	Original	FMB175 FMB175 ASI10589 ASI10589 c 108 m 229	PDF
Contextual Info: MLN2037F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MLN2037F is Designed for Class A Linear Applications up to 2.0 GHz. A ØD B FEATURES: E • Class A Operation • PG = 5.0 dB at 5.0 W/2.0 GHz • Omnigold Metalization System	Original	MLN2037F MLN2037F ASI10635	PDF
AVD035F Abstract: TACAN ASI10558 1402 Transistor Contextual Info: AVD035F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B The ASI AVD035F is a medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. A .100 X 45° ØD .088 x 45° CHAMFER C B E FEATURES: F G H • Class C Operation	Original	AVD035F AVD035F 10AXIMUM TACAN ASI10558 1402 Transistor	PDF
for IR IGBT die Abstract: 300C IRG4CC71KB IRG4PSC71K MIL-HDBK-263 Contextual Info: PD- 91834A IRG4CC71KB IRG4CC71KB IGBT Die in Wafer Form C 600 V Size 7.1 Ultra-Fast Speed Circuit Rated Rated G 6" Wafer E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage	Original	1834A IRG4CC71KB IRG4CC71KB for IR IGBT die 300C IRG4PSC71K MIL-HDBK-263	PDF
Contextual Info: PD- 91875A IRG4CC81KB IRG4CC81KB IGBT Die in Wafer Form C 600 V Size 8.1 Ultra-Fast Speed Short Circuit Rated G 6" Wafer E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage	Original	1875A IRG4CC81KB IRG4CC81KB	PDF

TACAN Abstract: ASI10562 AVD090F Contextual Info: AVD090F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B A The ASI AVD090F is Designed for Class C, DME/TACAN Applications up to 1150 MHz. .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES: • Internal Input Matching Network • PG = 8.5 dB at 90 W/1150 MHz	Original	AVD090F AVD090F ASI10562 TACAN ASI10562	PDF
MLN2037F Abstract: D 5888 s transistor 1548 b D 5888 equivalent transistor c 5888 ASI10635 Contextual Info: MLN2037F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MLN2037F is Designed for Class A Linear Applications up to 2.0 GHz. A ØD FEATURES: B E • Class A Operation • PG = 5.0 dB at 5.0 W/2.0 GHz • Omnigold Metalization System	Original	MLN2037F MLN2037F D 5888 s transistor 1548 b D 5888 equivalent transistor c 5888 ASI10635	PDF
AVD075F Abstract: ic 245 TACAN ASI10560 Contextual Info: AVD075F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B The ASI AVD075F is designed for applications requiring Class C, High Peak Power and low duty cycle such as IFF, DME and TACAN A .100 X 45° ØD C B E FEATURES: F G H • Internal Input Matching Network	Original	AVD075F AVD075F ASI10560 ic 245 TACAN ASI10560	PDF
BLW80 Contextual Info: BLW80 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: The ASI BLW80 is Designed for Class A,B or C UHF & VHF Communication applications up to 470 MHz. A 45° C E B E B FEATURES: C D • PG = 8.0 dB Typical at 470 MHz • Omnigold Metallization System	Original	BLW80 BLW80	PDF
AVF150 Abstract: TACAN ASI10570 1402 Transistor Contextual Info: AVF150 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG B DESCRIPTION: A .100 X 45° The ASI AVF150 is a high power Class C transistor, Designed forIFF/DME/TACAN Applications in 960-1215 MHz. ØD .088 x 45° CHAMFER C B FEATURES: E F • Internal Input/Output Matching Networks	Original	AVF150 AVF150 ASI10570 TACAN ASI10570 1402 Transistor	PDF
MSC1090M Abstract: 1402 Transistor transistor k 790 Contextual Info: MSC1090M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B A .100 X 45° The ASI MSC1090M is a common base Class C transistor, designed for Avionics, DME Applications from 1025 to 1150 MHz. ØD 1 3 C B .088 x 45° CHAMFER 4 2 E F FEATURES:	Original	MSC1090M MSC1090M 1402 Transistor transistor k 790	PDF
MSC81035M Abstract: TACAN TACAN 41 Contextual Info: MSC81035M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC81035M is a common base device, medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. PACKAGE STYLE .250 2L FLG B A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES:	Original	MSC81035M MSC81035M TACAN TACAN 41	PDF
BLW81 Contextual Info: BLW81 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: The ASI BLW81 is Designed for Class A,B or C UHF & VHF Communications A 45° C E B FEATURES: E B • PG = 6 dB Typical at 470 MHz • Omnigold Metallization System C D J E I F	Original	BLW81 BLW81	PDF
Contextual Info: BLU20/12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLU20/12 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 6.5 dB at 20 W/470 MHz • Omnigold Metalization System	Original	BLU20/12 BLU20/12	PDF
100WPEP Abstract: ASI10608 HF100-28 E270 Contextual Info: HF100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF100-28 is a class AB common Emitter Transistor Designed for broadband amplifier operations up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° A • PG = 15 dB min. at 100 W/30 MHz • High linear power output	Original	HF100-28 HF100-28 112x45° ASI10608 100WPEP ASI10608 E270	PDF

ICES 003 CLASS B Search Results

ICES 003 CLASS B Result Highlights (4)

ICES 003 CLASS B Datasheets Context Search

AVD015F

TACAN

ASI10691

ic 245

ASI10587

TP9380

ic 006

tp9380

MLN1037F

ASI10589

AVD035F

for IR IGBT die

TACAN

MLN2037F

AVD075F

BLW80

AVF150

MSC1090M

MSC81035M

BLW81

100WPEP