IC TI 072 Search Results

vood 342

Contextual Info: b3E LC7232-8291 D 7 cl ti 7 ü 7 b QQllSDM TTb • TSA J SANYO SEMICONDUCTOR CORP CMOS LSI *3 6 7 3 Single-chip PLL and Microcontroller with LCD Driver OVERVIEW c \ o t t ic s tu n in g The LC7232-8291 is a s in g le -ch ip m ic ro c o n tro lle r th a t is best su ite d fo r car

lb1551

Abstract: H125 L51551
Contextual Info: , ; .•;- [W-yi .j - \y, - v.; ;v r ■Viy i M1'• 7 ■¿•■'.'r/v*'ïV:ç ;■fi: ' ' !Ill fjl . 11;~wsfc-^rarfrat/ag,- •b:-jjkSM!»*M;wss:Ätsv‘.' o md, 679 L B 1551 ti ^ ¿ m — -er. V '■Ä, IC r > Â < ^ l 9 * T A Jt.V / ;/ • « A fi *

LXJ 72

Abstract: 8ET1-T 35333-136
Contextual Info: ¿ a I a Lo q MICRO SWITCH i m ti n i ntynM<c«rMii_[ma] λW#ea?'fttM»«u tSËJ f EO. M FR. COOE »1929 ’ r i — lis tin o 8ET1-T SWITCH - TOGGLE MAGNETIC HOLD-IN 6 8 9 1.0 DIA 10 H CIRCUITS I - 3, 4 - 6 AND 7 - 9 MADE (E LE C TR IC A LLY MAINTAINED POSITION)

Contextual Info: I n ter n a tio n a l LL4148 S e m ic o n d u c to r , I n c . and SWITCHING DIODES LL4150 LEADLESS PACKAGE FOR SURFACE MOUNT DOUBLE SLUG CONSTRUCTION LL4148 SW ITCHING DIODE M A X IM U M R A TIN G S O p e ra ti n g T e m pe ra tu re : - 6 5 ° C to + 2 0 0 ° C

Contextual Info: 4 3 2 1 DR AW IN G MADE IN THIRD ANGLE PROJ EC TI ON T H IS DRAWING IS U N PU BLISH ED . C COPY RI GH T 19 R ELEASED FOR P U B L IC A T IO N BY AMP INCORPORATED. LOC ,1 9 DIST AF ALL INTERNATIONAL RI GHTS RESERVED. 50 R E V IS IO N S P F ZONE LTR D E SC RI PT IO N

Contextual Info: User's Guide SLVU553 – October 2011 TLV71733PEVM-072 Evaluation Module This user’s guide describes operational use of the TLV71733PEVM-072 evaluation module as a reference design for engineering demonstration and evaluation of the TLV717xxP, low-dropout linear regulator.

2SA1265

Contextual Info: 5b TOSHIBA {DISCRETE/OPTO} 90 972 50 TOSHIB A ß F | SOTTESO 0DD720Ì 56C D ISCRETE/OPTO 07289 o r~j3~ 2SA1265 SILICON PNP TRIPLE DIFFUSED TYPE_ POWER AMPLIFIER APPLICATIONS. Unit in mm 15.9 MAX. 0O.2±O.2 FEATURES: . Complementary to 2SC3182 . Recommend for 70W High Fidelity

072-0024

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. , 19 LOC G ALL RIGHTS RESERVED- REVISIONS DIST 14 LTR DESCRIPTION REDRAWN PER 0720-0244 -93 DA TE DUN APVD 25APR9G LO ME D D MAX -I CU T-OF F TAB 1 . IN SU L A TI ON DIA

220 volt switch circuit diagram

Abstract: MS35333 JS-14
Contextual Info: CATALO G SWi ICH - TOGGLE MI CRO SWITCH « w i h íjjj mirotf. 1 MAGNETIC H O LD -IN i Dimic» of L IS T IN G 25ET1 - 6 NiitTnrii »f&uufQi luiwoit .072 ± . 0 0 4 WITHIN WI DE X .031 D E E P .250 KEY WAY TO OF S H O U l . O E R - ^ CD LO DIA I F •— ( 5 ) NO. 2 0 WI RE L E A D P E R M I L - W - 2 2 7 5 9 / 7

transistor DK RN

Abstract: 7 HL 05 PA33
Contextual Info: *PWS10 ms , , Du t y C y c l e ^50 % OJ t\3 A 1 U V H /// Vr V? si >j c_ m O O CD CO o m 5 o m o cn o xi > H O c/ o J> End ji­ co CD CO ¡2 T > C-. « > J3 o o AR1A3M •X tì« I H I w SO >1 m 4 ani* ctcr o 3 Fc. M . a - 3 3 pì+ jì Pi £+ a- Í r\

Contextual Info: Subscriber Line Interface Circuit SLIC Protection SIDACtor Data Book S y b s e rib e r Lin in te r fa c e C irc u it (S L IC ) P ro te c tio n The P0641S_and the P 0721S_are unidirectional solid state protection devices constructed with a SIDACtor and integrated

E509

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. , 19 LOC DIST REVISIONS G 14 ALL RIGHTS RESERVED- LTR R DESCRIPTION DA TE REVISE/REDRAW / 0720-0679-95 DUN APVD MLE SB 9JUL95 D WIRE RANGE ¡Î 2 2 -1 6 A WG SOLID OR STRANDED

1S955

Abstract: 2SA1608 T108
Contextual Info: NEC j m*=ri\rx A S ilic o n T r a n s is to r _ 2 S A 1 6 8 f2 '>M 3 > PNP i & m ; % 4 I M i s «£ " s ? -> < fm P N P Silicon Epitaxial T ra n sisto r Audio Freq uency A m plifier and S w itching 4# it : mm

nec fs 2181

Abstract: K0462 B0886 TC-6169 PA33 T108 S0742 J-03988 PJA 0836
Contextual Info: v — S • 5 ^ — K NEC C o m p o u n dT ra n sisto r m ^=r!\rfHf S i/trt tN PN ib ° 'J= AA1 F4Z ft ft ^ - f i : mm O /M 7 x i £ f i t £ | * i / l L T ^ i 1 _0 ( R i = 22 kQ) o AN1F4Z 3 > 7° IJ / > t ( T a = 2 5 * £ * * ! ! * : £ * & iM 9 U T i i f f l T '£ ¿ 1 %

341581

Abstract: PT1132
Contextual Info: 4 DRAWING HADE IN THIRD ANGLE PROJECTION U N PU B LIS H ED . RELEASED SV C COPYRIGHT 19 AM P FOR PU B LIC A TIO N INCORPORATED. LOC ,1 9 DIST G ALL INTERNATIONAL RIGHTS RESERVED. 14 R EV IS IO N S P F ZONE LTR DESCRIPTION F REV / 0720-0953-96 DATE 18JUN96

R096

Abstract: FN1L4Z
Contextual Info: . SEC r i Ï T 7 / \ f -y-57 • 5 / - H A C om pound Transistor FN 1L4Z i&ifc 1*1I t P N p n : 4# > 'J=l> Hwm it o/< 4 - to 2 .8 ± 0 .2 Ri =47 kQ O FA 1 L4 Z t 1.5 ? > 7 ° ') / > ? ') T l f f f l T ' ë 0.65*0 1 ~ t„ ( T a = 25 °C ) m »&

Contextual Info: SAMSUNG ELECTRONICS INC 42E D MPSH10/11 Hi ?*Jb414H 000^072 4 E3SÎ1GK NPN EPITAXIAL SILICO N TRANSISTO R VHF/UHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C C h a ra c te ristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (Ta= 2 5 ° C )

DN74LS364

Abstract: DN74LS364S
Contextual Info: PANASONIC 69 3 2 8 f 2 INDL/ELEK PANAS ON IC -CICÏ 7E » Ë J bTBEflSE 0[][]7a30 □ IN OL * E L E C T R O N IC 72C 07230 LS TTL DN74LSS/U-X . DN74LS364/DN74LS364S “ ö ~ 7 - C b5~ DN 74LS364/ DN74LS364S Octal Positive Edge-Triggerd D-Type Flip-Flops with 3 - s ta te Outputs

2SD1630

Contextual Info: SEC i l > h> y< '7— b =7 7 .9 Darlington Power Transistor 2SD1630 9 N P N l fc: JV W ii/ i; □ > h = 7 > i> i&mfcmtimm, 7 .9 { & & & * * ? * • > * & U L liiJB NPN ^ ',icon EP'taxial Darlington Transistor Audio Frequency Power Amplifier Low Speed Switching

b0958

Abstract: JE 33 PA33 R054-2 je 340 sis 5511 jl06 A0246
Contextual Info: v—S •S' î a - ê - h ^ Com pound Transistor A N I L4M # ftfó m i t o 7 / M x i £ i / i £ R i = 47 f t j t kQ , L T v ^ R 2= 4 7 ( T O î : mm t o kû) c O A A 1 L 4 M ¿1 =1 > 7 ° U / > ? U - C fë ffl X " £ £ t e ( T a = 25 ° C ) g II a u 9 9

Transistor BC 227

Abstract: TRANSISTOR BC 456 TRANSISTOR BC 413 AA1A4M PA33 T108 transistor BC 247 TRANSISTOR BC 413 b 3ete ATT 1177
Contextual Info: / 7 s— ^ - 2 / — h N EC i i r / \ f 7 J ^ Com pound Transistor AA1A4M Í A 1*1Ü # c N P N X '> ij =¡> h 7 V i > X ^ ® a ip - f i : mm o / < ^ T * íÉ # l ^ [*l/t L X ^ i i"o (R ! = 10 k ñ , R 2= 10 kQ) o AN1A4M t = J > V i ) S > ÿ i ) X î t m X è £ t o

Contextual Info: Compound Transistor G Σ ÎÆ f* 3 M P N P ^ ft I M 1 L 4 M > ' 3 > : mm) m o A<'f T X IE in; £ f*aM L T ^ i 1 0 Ri = 47 kQ, R 2= 47 kQ) c B o—V A — Ri —V v \ —'* Rs o E OGA1L4M t =? >7° IJ / > 9 U M arking (T a —25 °C ) *1 a v 9 •3 v 9 9

A0222-6

Abstract: jb 5531
Contextual Info: • S/— h C om po und T ran sisto r FA I L3Z mm o ^ 'M T X f f i i Î ï r F ’î j l L W-Î>L mm ' t t ' Î l -, 2 .8 + 0 .2 (R i = 4.7 k£ì) 0 . 65Î8: is 1.5 _L o FN1L3Z t =>> •/ 'J ^ > ? ') T ttffl T J i 1", « it * * ? « (T a = ii 2 5 ”C )

Contextual Info: NEC » f / 7s— 9 • 2 /— h C o m l i- r z T r a n s is t o r GN1L3M M « p o u n d p n p i 'J □ tt > A V =7 M T O O / N '^ ! mm 2.1 ±0.1 1.25 ±0.1 (R i =4.7 kQ, R 2= 4.7 k£2) O— W V R. O GA1L3M t =i > 7° U / > ? i) zl&Fìì T * & t „ ( T a = 25 °C