IC TB 1245 Search Results

Contextual Info: 2SA1245 TO SHIBA 2 SA 1245 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE Unit in mm HIGH FREQUENCY AM PLIFIER AND SWITCHING APPLICATIONS V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage

TB-534

Abstract: CA1389 98PL311 CA1589 R04350B
Contextual Info: 4$>*=3 THIRD ANGLE PROJECTION REV OR A ECN No. M 123889 M 124525 REVISIONS DESCRIPTION DATE DR AUTH 08/18/09 MMG NEW RELEASE MODIFIED DRAWING, CHG. TB IN TITLE 09/22/09 MMG DJ DJ S U G G E S T E D M O U N T IN G C O N F IG U R A T IO N FOR C A 1 5 8 9 C A S E STYLE, ’’0 6 A M 0 1 ” PIN C O D E

din 867

Abstract: 842 ic 41585
Contextual Info: 13 12 10 M A T E R IA L N O TES: 1. M A T E R IA L H O U S IN G : G L A S S F IL L E D 94V-0, 2. F IN IS H : S E L E C T G O LD SELEC T BO TH POW ER PLU G PLU G 2 PLUG 3 PLU G 4 PLUG T E R M IN A L S PRODUCT 5 SHEET PARTS PEG ARE H O LES M ATES M O LEX TO

GA100TS120K

Abstract: ic tb 1245
Contextual Info: PRELIMINARY GA100TS120K ]HALF-BRODGE” IGBT INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT Features • • VCES=1200V Generation 5 IGBT NPT technology

"Power Diode" 200V 30A

Abstract: RURD3010 RURD3015 RURD3020 RURD3040 diode 200v 30a 200V30A 200V 30A TRANSISTOR
Contextual Info: H A RR IS S E M I C O N D SE CT OR RURD3010 RURD3015 RURD3020 HARRIS SbE D • IHAS 4 3 0 2 27 1 G G 4 2 4 1 2 1SD 30A Ultrafast Dual Diode With Soft Recovery Characteristic M ay 1991 TO-218AC TOP VIEW Ultrafast with Soft Recovery Characteristic trr < 45ns

PD488170L

Abstract: TB 1226 EN NEC RDRAM LN2117 NEC PD488170L
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD488170L 18M-BIT Rambus DRAM 1M-WORD X 9-BIT X 2-BANK D escription The 18-Megabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 2M w ords by 9 bits and capable of bursting up to 256 bytes o fd a ta a t2 n s p e r byte. The use o f Rambus S ignaling

Contextual Info: MOTOROLA °rder Number ^AC10EP33/D Semiconductor Components M C10EP33 SO -8, D SUFFIX 8 - L E A D P L A S T IC S O IC P A C K A G E C A S E 7 5 1 -0 6 ORDERING INFORMATION W* / * , """ j S V iiW ^ .v j / I / •- ,v j V dA vi M C 10EP33D VÜ Product Preview

Contextual Info: 0rd6rNn ^ “ MOTOROLA Semiconductor Components M C10EP33 SO -8, D SUFFIX 8 - L E A D P L A S T IC S O IC P A C K A G E C A S E 751 ORDERING INFORMATION f*+ / * , t r - * * J s v ü w ' / F 1 * .v J ,v J / I vdA vj M C 10EP33D "• S O IC vü Product Preview

GA100TS120UPBF

Contextual Info: Preliminary Data Sheet I27243 12/06 GA100TS120UPbF "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

14D241

Abstract: Bt141 mz3 ptc 14d561 PCB Potentiometers RA 16Y thermistor MZ4 OS 430 NR, VARISTOR
Contextual Info: Electrolytic Capacitors 1 Potentiometers. 21 Connectors 36 Intermediate Frequency Transformers.55 Varistors. 57 Thermistors 61

GA100TS120U

Contextual Info: PD - 50060B GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

GA100TS120U

Contextual Info: PD - 5.060A PRELIMINARY GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

MPSA42 168

Abstract: U3760MB-N ic 1240 ringer ic 1240 ringer pin diagram 220UF 2N5401 BC546 MPSA42 U3760MB-NFN atmel 948
Contextual Info: U3760MB-N Low-Voltage Standard Telephone Circuit Description Atmel Wireless & Microcontrollers’ low-voltage telephone circuit, U3760MB-N, performs all the speech and line interface functions required in an electronic telephone set tone ringer, pulse and DTMF dialing with

E3P102

Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Contextual Info: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.

2N5401

Abstract: BC546 MPSA42 U3760MB ic 1240 ringer pin diagram 1240 ringer ic 1240 ringer 8 pin diagram
Contextual Info: U3760MB Low-Voltage Standard Telephone Circuit Description TEMIC’s low-voltage telephone circuit, U3760MB, performs all the speech and line interface functions required in an electronic telephone set tone ringer, pulse and DTMF dialing with redial. Features

MPSA42 168

Abstract: 220UF 2N5401 BC546 MPSA42 U3760MB-N U3760MB-NFN
Contextual Info: U3760MB-N Low-Voltage Standard Telephone Circuit Description TEMIC Semiconductors’ low-voltage telephone circuit, U3760MB-N, performs all the speech and line interface functions required in an electronic telephone set tone ringer, pulse and DTMF dialing with redial.

GA100TS120UPBF

Contextual Info: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode

GA100TS120UPBF

Contextual Info: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT

E78996 datasheet bridge

Contextual Info: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

GA100TS120UPBF

Contextual Info: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode

GA100TS120UPBF

Contextual Info: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT

GA100TS120UPBF

Contextual Info: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK UltrafastTM Speed IGBT FEATURES • Generation 4 IGBT technology 3 • Ultrafast: optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode 6 7

SSD1298

Abstract: MARKING S403 KVP45 MARKING S196 SSD1298Z sdc 606 KVP29 MARKING S410 marking S193 marking s186
Contextual Info: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1298 Advance Information 240 RGB x 320 TFT LCD Controller Driver integrated Power Circuit, Gate and Source Driver with built-in RAM This document contains information on a new product. Specifications and information herein are subject to change

HE80012M

Abstract: HE80012S HE80016M HE80016S HE80021M HE80021S HE83000 HE83115 HE8P160 Jess Technology
Contextual Info: Suites 2202-7, Tower 6, The Gateway, 9 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 852 2123 3289 Fax: (852) 2123 3393 E-mail: sales@jesstech.com Home Page: www.jesstech.com HE8P160 HE80000 SERIES A. HE8P160 Introduction HE8P160 is a member of 8-bit Micro-controller OTP series product developed by Jess