IC SEM 2004 Search Results

V405A

Abstract: BFR38 2N2907 plastic BFR99 BFY18 BFY64 sgs 2n2907a transistor 2N4033 2N2894 2N3209
Contextual Info: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors P N P High Speed Saturated Switching Transistors Metal Can T018, T039 R E FE R E N C E T A B L E For medium speed - see générai purpose section C H A R A C T E R IS T IC S M A X R A T IN G S

6502 microprocessor

Abstract: plessey cla 3000 crompton K-50-50 ferranti ztx SP92701 draw pin configuration of ic 7404 SP9754
Contextual Info: DATA CONVERTERS & Voltage References IC Handbook APLE SSE Y Sem iconductors Foreword The collective description of Data Conversion covers a vast range of applications which is limited only by the imagination of today’s system designers. Traditionally the name of Plessey

L1606

Abstract: a 1201 sanyo 2SD1837
Contextual Info: SANYO SEM IC ON D UC TOR CORP 1HE D I ? tiT?Q?b DDDSEb4 2SD1837 T-33-2041 NPN Planar Silicon Darlington Transistor Driver Applications 2231A Applications . Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers Features

1s126a

Abstract: 2SD1837 1S126
Contextual Info: SANYO SEM IC ON D UC TOR CORP 1HE D I ? tiT?Q?b DDDSEb4 T-33- 2SD1837 2041 NPN Planar Silicon Darlington Transistor Driver Applications 2231A Applications . Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers Features

C4448

Abstract: VCC18
Contextual Info: DUAL PLL IC FOR CORDLESS TELEPHONE SETS SEM CONDUCTOR DUAL PLL FOR TRANSMISSION/RECEIVING SYSTEMS HOUSED IN A SINGLE CHIP EN­ ABLING LOW VOLTAGE OPERATION WITH TWO NI-CD BATTERIES Ne w s M64080GP u N The newly-developed PLL semiconduc­ tor integrated circuit, M64080GP for

IC SEM 2004

Abstract: kdv350f
Contextual Info: SEM IC O N D U C T O R KDV350F TE CHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES C ATHODE MARK • High Capacitance Ratio : C lv/C 4v=2.8 Min. E • Low Series Resistance. : rs=0.5 Q , (max.) • Good C-V linearity.

IC SEM 2004

Abstract: c5387 CMZ5356B
Contextual Info: Central CMZ5342B THRU CMZ5388B SURFACE MOUNT HIGH POWER SILICON ZENER DIODE 6.8 VOLTS THRU 200 VOLTS 5.0W, 5% TOLERANCE Sem iconductor Corp. DESCRIPTION: The C E N T R A L S E M IC O N D U C T O R C M Z5342B Series Silicon Zener Diode is a high quality

mjab

Abstract: melco APD 26P0 str 2105 M5M4C1000-10 Hl97 MEAB L9739 DYNAMIC RAM CROSS REFERENCE L-12
Contextual Info: M IT S U B IS H I SEM IC O N D U C TO R S M5M4C1000P,J,L-10,-12,-15 1 * 1. 1 0 4 8 5 7 6 -B IT 1 0 4 8 576-W O R D BY 1 -B IT D Y N A M IC RAM —F ast P ag e Mode— S E P , 16, 19 8 6 DESCRIPTION This is a family of 1,048,576-word by 1-bit dynamic RAMs,

MUR-6040

Abstract: MUR6040 340E-01 MUR6020 MUR6030
Contextual Info: MOTOROLA SEM IC O N D U CT O R b3ti725S ODflbSl? SIT • MOT? b4F P MO TO RO LA SC D IO DE S / O P T O TECHNICAL DATA MUR6020 MUR6030 MUR6040 SW ITCH M O DE Power Rectifiers MUR6020 and MUR6040 a n Motorola Preferred Devices . designed for use in switching power supplies, inverters and as free wheeling diodes,

mic bias circuit

Abstract: "SIDE TONE CONTROL" FORMIC Genarator tsz02201 BU7841GLU mb20n BRTT y28k
Contextual Info: Semiconductor Integrated Circuit ST R U C T U R E sem iconductor lotegrated circuit PRO D U C T PC M Voice C O D EC IC for mobile phone M O D ELN A M E BU 7 8 4 1 G LU EX T ER N A L V IEW Figure-1 BLO C K DIAGRAM F EA T U R E S BU7841GLU Extem a! View Figure-2 Block diagram

Contextual Info: Order this data sheet by HCA62A00/D M MOTOROLA HCA62A00 Series SEM ICO NDUCTO RS P.O. BOX 20912 • PHOENIX, ARIZO NA 85036 HCA62A00 SERIES CM OS MACROCELL ARRAYS T h e H C A 62A 00 series m acrocell arrays are im p le m e n te d in sil­ icon gate, 2-m ic ro n d raw n gate len gth , d u a l-lay er m etal interco n ­

sem 3040

Abstract: 44022 ee ca 3161 e IC
Contextual Info: SALES NETWORK LG Semicon OVERSEAS SUBSIDIARIES & OFFICES U.S.A LG Semicon America, Inc. 3003 North First Street San Jose, CA 95134-2004 Tel : 1 408-432-5000 Fax : (1)408-432-6067 LGSA Raleigh Office 5511 Capital Center Drive, Suite 430, Raleigh, NC 27606

Contextual Info: 1470-19 3 / 11 4 TH IS DRAWING IS 2 A U N P U B L IS H E D . RELEASED FOR PUBLICATION DEC ,2004- R E V IS IO N S SEM ALL RIGHTS RESERVED. COPYRIGHT 2004 By - P : m D 1 - 0 □ - 5 HI AS SHOWN: 1- - 0 CONNECTOR DWG (0 .9 5 ) (1 .5 ) 0.8 0 .8 5 □ Y-

AN8015SH

Contextual Info: Code No.: IC3F4738 Total Pages Page 17 1 Part No. AN8015SH Package Code No. SSOP010-P-0225A Analogue LSI Business Unit Semiconductor Company Matsushita Electric Industrial Co., Ltd. Established by Applied by ^ K.Komichi Checked by •ty 4 c tfm ìÙ Ìi M.Hiramatsu

AXP 209 IC

Abstract: sem 2105 16 pin AXP 202 AEG T 51 N 1200 77480 48409 IC SEM 2105 Pioneer PA 0016 94-4033 sem 2105
Contextual Info: Tem ic Sales Offices Semiconductors Addresses Europe Poland Sweden TE M IC TELEFU N K EN m icroelectronic Gm bH Theresienstrasse 2 74072 H eilbronn Postfach 3535, PLZ 74025 Tel: 49 7131 67 3737 Fax: 49 7131 672444 TEM IC TE LE FU N K E N m icroelectronic Gm bH

TRANSISTOR si 6822

Abstract: LM 3140 si 6822 transistor transistor 6822 si transistors Si 6822 lm3140 SN-72500 transistors br 6822 Siemens technische transistor 6823
Contextual Info: Technische Erläuterungen SIEMENS Allgem eines O ptoelektronische Bauelem ente haben in der m odernen Elektronik und dam it in fast allen Bereichen unseres Lebens weiten Eingang gefunden. Sie sind in hohem Maße an dem Um stellungsprozeß von Mechanik auf Elektronik beteiligt und haben, aufgrund ihrer Funktion als

str f 6456

Abstract: str x 6456 SM 5126 BP STR F 6168 str 6668 STR G 6352 STR 6456 str f 6468 321 CJ 7121 AXP 209 IC
Contextual Info: Tem ic Se ni i co n fi li c t ci Sales Offices rs Addresses Europe France TE M IC France Les Q uadrants 3. avenue du centre B.P. 309 78054 S t.-Q uentin-en-Y veL nes Cedex Tel: 33 I 3060 7000 F a x :33 I 3060 V 11 i Germany TE M IC TE LEFU N K EN m icroelectronic G m bH

Contextual Info: KSC2785 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC. TO -92S • C om plem ent to KS A 1175 • Col lector-Base Voltage V Cb o = 6 0 V ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Rating Unit 60 50 5 V V V Col lector-Base Voltage

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC945 AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC. T O -92 • C om plem ent to KSA733 • Col lector-Base Voltage V Cb o = 6 0 V • High C urrent Gain Bandwidth Product fj= 3 0 0 M H z Typ ABSOLUTE MAXIMUM RATINGS (TA=25°C)

Contextual Info: KSD5041 NPN EPITAXIAL SILICON TRANSISTOR AF OUTPUT AMPLIFIER FOR ELECTRONIC FLASH UNIT • Low C ollector-E m itter Saturation Voltage • High Perform ance at Low Supply Voltage ABSO LU TE M AXIMUM RATINGS TA=25°C Characteristic Sym bol Rating Unit Col lector-Base Voltage

Contextual Info: KSC1222 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY LOW NOISE AMPLIFIER • Col lector-Base Voltage: V Cb o = 5 0 V • Low Noise Level: N L=40mV Max ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage

KSC815

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC815 LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR T O -92 • C om plem ent to KSA539 • Col lector-Base Voltage V Cbo = 6 0 V ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage

Contextual Info: KSD1021 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • C om plem ent to K S B811 • C ollector C urrent |c=1 A • C ollector D issipation P c=350m W ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Sym bol Rating Unit V V Col lector-Base Voltage

300xa

Abstract: KSC3488
Contextual Info: KSC3488 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO -92S • C om plem ent to KSA1378 • C ollector Dissipation Pc=300m W ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Rating Unit Col lector-Base Voltage V cB O 30 V C ollector-E m itter Voltage