IC NUMBER 3175 B Search Results

Contextual Info: Q a v a n tek MGA-65100 Medium Power 2 Stage GaAs FET Cascade Avantek Chip Outline Features • • Unmatched 2 Stage FET Cascade High Output Power: 24 dBm typical Pi dB at 14 GHz • High Gain: 9.5 dB typical Gi dB at 14 GHz • Single Supply Bias 3» mil

Contextual Info: O a v a n te k MSA-0486 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 86 Plastic Package Features • • • • • • • Cascadable 50 Q Gain Block 3 dB Bandwidth: DC to 3.2 GHz 12.5 dBm typical Pi <ib at 1.0 GHz

Contextual Info: Q a v a n te k MSA-0311 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek SOT-143 Package Features • • • • • • • Cascadable 50 £2 Gain Block 3 dB Bandwidth: DC to 2.3 GHz 11.0 dB typical Gain at 1.0 GHz

Contextual Info: Oavantek MSA-0386 MOD A M P C ascadable S ilic o n B ip o la r M o n o lith ic M icrow ave Integrated C irc u it A m p lifie rs Avantek 86 Plastic Package Features • Cascadable 50 Cl Gain Block • 3 dB Bandwidth: DC to 2.4 GHz • 12.0 dB typical Gain at 1.0 GHz

Contextual Info: O a v a n te k MSA-0700 MOD AMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek Chip Outline1 Features • Cascadable 50 O Gain Block • Low Operating Voltage 4.0 V typical Vd • 3 dB Bandwidth: DC to 2.5 GHz • 13.0 dB typical Gain at 1.0 GHz

Contextual Info: Oavantek MSA-0886 M O D A M P C ascadable S ilic o n B ip o la r M o n o lith ic M icrow ave Integrated C irc u it A m p lifie rs Avantek 86 Plastic Package Features • • • • • Usable Gain to 5.5 GHz High Gain: 32.5 dB typical at 0.1 GHz 22.5 dB typical at 1.0 GHz

Contextual Info: AVANTEK INC I0 A V A N eoe • d imnbb QQatbao b ■ MSA-0505 ■' MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated * : . Circuit Amplifiers; T E K • " T - T H S - O I Avantek 05 Plastic Package . Features • • Cascadable 50 £2 Gain Block

Contextual Info: AVANTEK INC O a v a SQE D n • imiTbb DODLbSE 1 ■ MSA-0311 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers t e k Avantek SOT-143 Package Features • Cascadable 50 a Gain Block • 3 dB Bandwidth: DC to 2.3 GHz .

Contextual Info: O / W A limufei OOQbbTb 4 EOE D AVANTEK INC N T E MSA-0486 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers K - w i - o i Avantek 86 Plastic Package Features • • • « • • • p Cascadable 50 f i Gain Block 3 dB Bandwidth: DC to 3.2 GHz

max8982

Abstract: NR3015T1R0N FA 600
Contextual Info: 19-5472; Rev 0; 12/10 TION KIT EVALUA BLE IL AVA A Power-Management ICs for ICERA E400/E450 Platform Features The MAX8982A/MAX8982X are complete power-management ICs for the latest LTE/WCDMA/GSM/GPRS/ EDGE data card based on the new ICERA platform E400/ E450 . The MAX8982A operates from a 4.1V to 5.5V

Avantek UA-152

Contextual Info: 5QE D AVANTEK INC n O avantek n m 3 aGObb^a MSA-0711 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Am plifiers T * W Avantek SOT-143 Package Features • • • • • • V O Cascadable 50 i i Gain Block 3 dB Bandwidth: DC to 1.9 GHz

ICE8060

Abstract: MIPF2016D KSLI-252012AG-2R2 MIPF2012D FA 600 E4-50
Contextual Info: 19-5472; Rev 2; 4/11 TION KIT EVALUA BLE IL AVA A Power-Management ICs for ICERA E400 Platform The MAX8982A/MAX8982P/MAX8982X are complete power-management ICs for the latest LTE/WCDMA/GSM/ GPRS/EDGE data card based on the new ICERA platform E400 . The MAX8982A operates from a 4.1V to 5.5V

Contextual Info: EVALUATION KIT AVAILABLE MAX8982A/MAX8982P/MAX8982X Power-Management ICs for ICERA E400 Platform General Description The MAX8982A/MAX8982P/MAX8982X are complete power-management ICs for the latest LTE/WCDMA/GSM/ GPRS/EDGE data card based on the new ICERA platform

Contextual Info: 19-4402; Rev 1; 5/09 SiGe, High-Linearity, 2000MHz to 3900MHz Downconversion Mixer with LO Buffer The MAX19996A single, high-linearity downconversion mixer provides 8.7dB conversion gain, +24.5dBm IIP3, and 9.8dB noise figure for 2000MHz to 3900MHz WCS, LTE, WiMAX , and MMDS wireless infrastructure applications. With an ultra-wide LO frequency range of

Contextual Info: data sheet van « 1982 A V A N TEK MSA-0486 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers September, 1989 Avantek 86 Plastic Package Features .020 .51 Cascadable 50 £2 Gain Block 3 dB Bandwidth: DC to 3.2 GHz 12.5 dBm typical Pi dB at 1.0 GHz

Contextual Info: data sheet MAR 9 199 2 0A VA N TEK MSA-0505 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers June, 1989 Features • • Avantek 05 Plastic Package • Cascadable 50 Q Gain Block High Output Power: 18.0 dBm typical Pi ¿Bat 1.0 GHz

hall effect sensor ugn3175

Abstract: UGN3175 h0023 UGN3177
Contextual Info: 3175 .3177 am , HALL EFFECT LATCHES These Hall effect latches are tem perature-stable and stressresistant sensors especially suited for electronic comm utation in brushless dc motors using multipole ring m agnets. Each device in­ cludes a voltage regulator, quadratic Hall voltage generator, tem pera­

AnTek

Contextual Info: data sheet & AV A NTEK msa-0186 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers September, 1989 Features • • • • • • Avantek 86 Plastic Package Cascadable 50 Q Gain Block 3 dB Bandwidth: DC to 0.9 GHz High Gain: 17.5 dB typical at 0.5 GHz

Contextual Info: SQE I> AVANTEK INC A V A N TEK • U H llb t OOObTOt =1 MSA-0786 MODAMP C ascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers T-74-e-ot Features • • • • • • • Avantek 86 Plastic Package Cascadable 50 Q Gain Block

Contextual Info: AVANTEK O a IN C w n aOE t e D l i m % h OOGbbHb b M SA-0286 M O D A M P G a sca d ab le S ilic o n Bipolar M onolithic M icrow ave Integrated Circuit Am plifiers k ' r - 7 tH 3 - o i Avantek 86 Plastic Package Features • • • • • • Cascadable 50 a Gain Block

Contextual Info: data sheet HO! e is» O ava ntek MSA-0700 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers October, 1989 Avantek Chip Outline1 Features • Cascadable 50 & Gain Block • Low Operating Voltage 4.0 V typical Vd • 3 dB Bandwidth: DC to 2.5 GHz

Contextual Info: data sheet «W 8 1992 0A V A N T E K MSA-0886 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers September, 1989 Avantek 86 Plastic Package Features • • • • • .020 Usable Gain to 5.5 GHz High Gain: 32.5 dB typical at 0.1 GHz

Contextual Info: mar dam sheet 0 1992 0A VA N TEK MSA-0800 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers October, 1989 Avantek Chip Outline1 Features • • Usable Gain to 6.0 GHz High Gain: 32.5 dB typical at 0.1 GHz 23.5 dB typical at 1.0 GHz

Contextual Info: MITSUBISHI RF POWER TRANSISTOR tiEM'iñe'J 0017bfi0 Mbl NPN EPITAXIAL PLANAR T Y P E DISCRIPTION OUTLINE DRAWING 2SC3241 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dimensions in mm FEATU RES