IC MARKING VT Search Results

B78416

Abstract: marking code xl BCM6410 B78416A1829A003 A1829 4236 8 pin ic marking code BROADCOM 1414 marking BCM64 FIN0240-I-E
Contextual Info: EP 5 XL xDSL Transformers ADSL Interface B78416A1829A003 Application Dimensional drawing • Matched to Broadcom IC 7.5 max. BladeRunner BCM6410/20 6.2 max. 7.5 max. Features 7 max. ■ Bobbin material, insulating tape and wire are UL listed Marking Pin 1

A1822

Abstract: ic 4565 marking code rdc FIN0243-G-E FIN0244-0 FIN0245-W marking code ep peb 4365 epcos filter
Contextual Info: EP 7 xDSL Applications ADSL Low Pass Filter B78417A1822A003 Application Dimensional drawing • Matched to Infineon IC Geminax 10 max. PEB 4565, 3558; PEF 22716, 22720 8 max. 9.4 max. in case 2-section 10.9 max. Features ■ Lead-free terminals Marking Pin 1

motorola Bluetooth-chipset

Abstract: Bluetooth-chipset MC13180 MC13181 MC13181FC MC71000 QFN-24
Contextual Info: Technical Data MC13181/D Rev. 1, 11/2002 MC13181 Wireless Power Management Integrated Circuit Scale 2:1 Package Information Plastic Package Case 1307 (QFN-24) Ordering Information Device Marking Package MC13181FC 13181 QFN-24 The MC13181 Wireless Power Management Integrated Circuit (PMIC) is a monolithic IC

SOT-23 Marking code MU

Abstract: F 5 Ld SOT-23
Contextual Info: TN2124 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVdss / R d s <o n V GS lh) b v dgs (max) (max) TO-236AB* Die N IC * 240V 15a 2.0V TN2124K1 TN2124ND

Contextual Info: PRELIMINARY MT58LC128K16C6 128K X 16 SYNCBURST SRAM l^ ic n o N 128K X 16 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST COUNTER FEATURES • • • • • • • • OPTIONS MARKING • Timing 12ns clock cycle 83 MHz 13ns clock cycle (75 MHz)

Contextual Info: Transistors NPN General Purpose Transistor I BC848BW/BC848B/BC848C fF M tu ra t •E x te rn a l dimensions Units : mm 1 ) BV ceo< 3 0V (Ic — 1mA) 2 ) C om plem ents the BC 858B /B C858BW . BC848BW •P a c k a g e , marking and packaging specifications

Contextual Info: PRELIMINARY |U|IC=RON 1 MEG X MT8LS1 32 32 SRAM M O D U LE 1 MEG X 32 SRAM SRAM MODULE 3.3V WITH OUTPUT ENABLE FEATURES • • • • • • OPTIONS 72-Pin SIMM SE-4 72-Pin ZIP (SG-4) MARKING • T im in g 15ns access 20n s access 25n s access 35n s access

48LC

Abstract: MT18LSDT472
Contextual Info: ADVANCE 2. 4 M E G X 72 S D R A M DIM Ms |U |IC = R O N SYNCHRONOUS DRAM MODULE MT9LSD T 272A MT18LSD(T)472A FEATURES OPTIONS (DE-7) 2 Meg x 72 TSOP (shown), (DE-8) 4 Meg x 72 TSOP, (DE-27) 2 Meg x 72 SOJ, (DE-28) 4 Meg x 72 SOJ MARKING • Components SO J

Contextual Info: ADVANCE 2 MEG X 64 S D R A M SO DIM M IC Z R O fM SMALL-OUTLINE SDRAM MODULE MT8LSDT264H FEATURES OPTIONS 144-Pin Small-Outline DIMM DF-6 umilimi MARKING • Package 144-pin SODIM M (gold) G • F requen cy/C A S Latency 66 M H z /C L = 2 (10ns, 100 M Hz SDRAM s) -66CL2

Contextual Info: VT6X1 / EMX51 Datasheet Power management dual transistors l Outline Parameter Tr1 and Tr2 VCEO 20V IC 200mA VMT6 EMT6 VT6X1 EMX51 (SC-107C) l Features

Contextual Info: VT6X2 / EMX52 Datasheet Power management dual transistors l Outline Parameter Tr1 and Tr2 VCEO 50V IC 100mA VMT6 EMT6 VT6X2 EMX52 (SC-107C) l Features

Contextual Info: VT6T1 / EMT51 Datasheet General purpose transister isolated dual transistors l Outline Parameter Tr1 and Tr2 VCEO -20V IC -200mA VMT6 EMT6 VT6T1 EMT51 (SC-107C)

Contextual Info: VT6T2 / EMT52 Datasheet General purpose transister isolated dual transistors l Outline Parameter Tr1 and Tr2 VCEO -50V IC -100mA VMT6 EMT6 VT6T2 EMT52 (SC-107C)

MOSFET marking smd

Abstract: marking kp SMD TRANSISTOR MARKING 93 MOSFET smd marking mosfet vth 5v vth mos 2SK2033
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK2033 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High input impedance. 0.4 3 1 0.55 Enhancement-Mode +0.1 1.3-0.1 +0.1 2.4-0.1 Low gate threshold voltage :Vth=0.5 to 1.5V 2 +0.1 0.95-0.1 +0.1 1.9-0.1

4405

Abstract: SLD-2083
Contextual Info: PROPRIETARY DATA Thli dooumant m ij not ba raprodnoad. REVISION HISTORY REV dlackaad. or otbanriaa and, In ib o h or h put. vttlvut tfca vrlttan pm nU an of S K E N Z A M IC R O D E V IC E S A DESCRIPTION ENGINEERING RELEASE B 2- ECO APPR DATE 4405 WTD 0 9 /1 5 /0 4

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD U74AHCT1G14 CMOS IC SINGLE SCHMITT-TRIGGER INVERTER „ DESCRIPTION The U74AHCT1G14 is a single schmitt-trigger inverter providing the function Y=A. The gates of device have different input threshold levels for positive- going VT+ and negative-going(VT-) signals because of the

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD U74LVC1G17 CMOS IC SINGLE SCHMITT-TRIGGER BUFFER DESCRIPTION „ The U74LVC1G17 is a single Schmitt-trigger buffer, it provides the function Y=A. The device have different input threshold levels for positivegoing VT+ and negative-going(VT-) signals because of the

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD U74LVC1G14 CMOS IC SINGLE SCHMITT-TRIGGER INVERTER „ DESCRIPTION The UTC U74LVC1G14 is a single Schmitt-trigger inverter, it provides the function Y= A . The device have different input threshold levels for positivegoing VT+ and negative-going(VT-) signals because of the

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD U74LVC1G17 CMOS IC SINGLE SCHMITT-TRIGGER BUFFER „ DESCRIPTION The UTC U74LVC1G17 is a single Schmitt-trigger buffer, it provides the function Y=A. The device have different input threshold levels for positivegoing VT+ and negative-going(VT-) signals because of the

Contextual Info: 2SJ317 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Low voltage operation Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.

Contextual Info: SiW1711 VTUNE VREFM_CAP VREFP_CAP VBB_RDY VDD_IO VBB_OUT VBATT_DIG • Single chip IC with 2.4 GHz transceiver and GFSK modem with digital interface to external baseband processor. • Fully compliant with Bluetooth specification 1.1 and 1.2. • Supports multiple external reference

Contextual Info: SiW1711 VTUNE VREFM_CAP VREFP_CAP VBB_RDY VDD_IO VBB_OUT VBATT_DIG • Single chip IC with 2.4 GHz transceiver and GFSK modem with digital interface to external baseband processor. • Fully compliant with Bluetooth specification 1.1 and 1.2. • Supports multiple external reference

BC237

Abstract: 2.4GHZ synthesizer
Contextual Info: SiW1711 BLUETOOTH RADIO MODEM Voltage Regulator and Power Distribution CHG_PUMP VTUNE VREFM_CAP VREFP_CAP VBB_RDY VDD_IO VBB_OUT • Integrated RF transceiver and modem for Bluetooth® Wireless Technology, with digital interface to external baseband processor.

amp TYCO sub-d

Abstract: subd Sub-D 25-pol
Contextual Info: R E LE A S ED FOR P U B LIC A TIO N DEL 2004 ^ATED WITH: F A S S E N D ZU: FREI BY C O P Y R I G FIT 2 0 0 4 TYCO ELEC TR O N IC S FUER V E R Ö F F E N T L I C H U N G ALL RIGHTS R ESER VED . CORPORATIO N. LOC D IST REV IS I O N S AENDERUNGEN AI I F R FT H TF VTIRRFHAI T F N .