IC MARKING FZ Search Results

964312-1

Contextual Info: CUSTOMER-PART Ku nde n -Te i I e MATERIAL MARKING Mafer ia lk en nze Ic hn u ng 'SPT ' 4,8mm MALE TERM, SINGLE-WIRE S E A T LOR SET 4 ^ M m \ d C S 2\ 1 . 5 mm \MALE\ T E R M ^ ^ T YCO- PA R T- NO, CONTACT BODY: 4 , 0 0 mmA2 \ \ 964314-1 Grundfeder: Cu Fe

MARKING KN1

Contextual Info: NOT RECOMMENDED FOR NEW DESIGN USE FZT491 DZT491 NPN SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available DZT591C Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications

Contextual Info: NOT RECOMMENDED FOR NEW DESIGN USE FZT591 DZT591C PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DZT491 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications

Contextual Info: NOT RECOMMENDED FOR NEW DESIGN USE FZT658 DZT658 NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications

P315 transistor

Contextual Info: NOT RECOMMENDED FOR NEW DESIGN USE FZT788B DPLS315E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Features •        Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70m at 3A High DC Current Gain hFE > 300 at IC = 2A

Contextual Info: NOT RECOMMENDED FOR NEW DESIGN USE FZT688B DNLS412E LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Features •        Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 57.5m at 4A High DC Current Gain hFE > 400 at IC = 3A

Contextual Info: NOT RECOMMENDED FOR NEW DESIGN USE FZT751 DZT751 LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available (DZT651) Ideally Suited for Automated Assembly Processes

Contextual Info: Not recommended for new design. Alternative is FZT789A DPLS325E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Features N •        Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70m at 3A High DC Current Gain hFE > 200 at IC = 2A

transistor fzt651

Abstract: MARKING KN2
Contextual Info: NOT RECOMMENDED FOR NEW DESIGN USE FZT651 DZT651 LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DZT751) Ideally Suited for Automated Assembly Processes

Contextual Info: Transistors IC SMD Type PNP Silicon Planar Medium Power Transistor FZT589 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 -0.2 • Features ● Power Collector dissipation: PC=2W ● Continuous Collector Current: IC=-1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 6.50 +0.2

smd transistor pnp 591

Contextual Info: Transistors IC SMD Type PNP Silicon Planar Medium Power Transistor FZT591 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 -0.2 • Features ● Power Collector dissipation: PC=2W ● Continuous Collector Current: IC=-1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 6.50 +0.2

Contextual Info: Transistors IC SMD Type Product specification FZT489 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 ● Continuous Collector Current: IC=1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Power Dissipation: PC=2W +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3

Contextual Info: Product specification FZT589 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 -0.2 • Features ● Power Collector dissipation: PC=2W ● Continuous Collector Current: IC=-1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 6.50 +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3 4 1 Base

Contextual Info: Product specification FZT591A SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 -0.2 • Features ● Power Collector dissipation: PC=2W ● Continuous Collector Current: IC=-1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 6.50 +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3 4 1 Base

549 SMD transistor

Contextual Info: Transistors IC SMD Type PNP Silicon Planar Medium Power Transistor FZT549 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 -0.2 • Features ● Power Collector dissipation: PC=2W ● Continuous Collector Current: IC=-1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 6.50 +0.2

Contextual Info: Transistors IC SMD Type PNP Silicon Planar Medium Power Transistor FZT591A SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 -0.2 • Features ● Power Collector dissipation: PC=2W ● Continuous Collector Current: IC=-1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 6.50 +0.2

MARKING SMD PNP TRANSISTOR 2a

Abstract: smd transistor MARKING 2A marking fzt790a smd transistor 2A FZT790A
Contextual Info: Transistors SMD Type PNP Silicon Planar Medium Power High Gain Transistor FZT790A SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Low equivalent on-resistance; RCE sat 125mÙ at 2A. Gain of 200 at IC=1 Amps and Very low saturation voltage. +0.1 3.00-0.1 +0.15 1.65-0.15

Contextual Info: Transistors IC SMD Type Product specification FZT491 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 ● Continuous Collector Current: IC=1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Power Dissipation: PC=2W +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3

Contextual Info: Transistors IC SMD Type NPN Silicon Planar Medium Power Transistor FZT489 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 ● Continuous Collector Current: IC=1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Power Dissipation: PC=2W +0.2 0.90-0.2 +0.1

Contextual Info: Product specification FZT591 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 -0.2 • Features ● Power Collector dissipation: PC=2W ● Continuous Collector Current: IC=-1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 6.50 +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3 4 1 Base

MARKING SMD npn TRANSISTOR 1a

Abstract: FZT692B smd transistor marking 1A TRANSISTOR SMD 1A smd ic marking 1A smd transistor 2A TRANSISTOR SMD 1a 9 SMD TRANSISTOR MARKING 2A SOT223 marking 1A BR smd transistor MARKING
Contextual Info: Transistors SMD Type NPN Silcon Planar Medium Power High Gain Transistor FZT692B SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 High gain + very low saturation voltage. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3

Contextual Info: Product specification FZT549 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 -0.2 • Features ● Power Collector dissipation: PC=2W ● Continuous Collector Current: IC=-1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 6.50 +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3 4 1 Base

Contextual Info: Transistors IC SMD Type PNP Silicon Planar Medium Power High Transistor FZT1151A SOT-223 • Features Unit: mm +0.2 3.50-0.2 ● Low saturation Voltage ● High Gain +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3

Contextual Info: Product specification FZT790A SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Low equivalent on-resistance; RCE sat 125mÙ at 2A. Gain of 200 at IC=1 Amps and Very low saturation voltage. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2