IC MARKING 106 Search Results

transistor MAR 819

Abstract: transistor MAR 543 sl2 357 BFS17
Contextual Info: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4

motorola Bluetooth-chipset

Abstract: Bluetooth-chipset MC13180 MC13181 MC13181FC MC71000 QFN-24
Contextual Info: Technical Data MC13181/D Rev. 1, 11/2002 MC13181 Wireless Power Management Integrated Circuit Scale 2:1 Package Information Plastic Package Case 1307 (QFN-24) Ordering Information Device Marking Package MC13181FC 13181 QFN-24 The MC13181 Wireless Power Management Integrated Circuit (PMIC) is a monolithic IC

MAR 641 TRANSISTOR

Abstract: transistor MAR 543 MAR 737 ic BFR92AR BFR92A mar 727 1646 IC 28B SOT-23 of ha 741 ic MAR 737
Contextual Info: Tem ic BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency BFR92A Marking: + P2 Plastic case SOT 23

irlm5203

Abstract: p45an marking p73 TA07-11EWA LM386 RX610 Marking R33 P33 5P53 P42AN marking P55
Contextual Info: 5 D 4 3 RX-Stick Schematics PAGE 2 1 REV REF DATE 1.00 - 28.04.2010 DESCRIPTION 1 INDEX 2 Power & Sound 3 RX610 Microcontroller 4 LED 5 Connector 6 R8C/1B Microcontroller,USB connector USB to Serial IC C B * "DNF" marking means that component does not fit by default.

BFR92a MARKING P2

Abstract: MAR 641 TRANSISTOR sot-23 marking RIP ha 1452 BFR92A
Contextual Info: T em ic BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency BFR92A Marking: + P2 Plastic case SOT 23

PC1318

Abstract: BIPOLAR MOTOROLA 2N J1 TRANSISTOR DIODE SOT-23 PACKAGE PC13180FC 13MHZ NDK MARKING 12p SOT-23 RF loop antenna 13Mhz transistor marking code 7E SOT-23 MC13180 MC71000
Contextual Info: Product Preview MC13180PP/D Rev. 2, 08/2002 MC13180 2.4 GHz Low Power Wireless Transceiver IC for Bluetooth Applications Package Information Plastic Package Case 1314 QFN-48 Ordering Information Device Marking Package PC13180FC PC13180FC QFN-48 The MC13180 2.4 GHz Low Power Wireless Transceiver for Bluetooth™ is a part of the

RA500

Abstract: marking code R66 B 722 P RA430 6041 RA480 RA650 RA225
Contextual Info: LOW PROFILE SERIES S P E C IF IC A T IO N S 4 2 0 ,4 6 0 ,4 8 0 , and 5 1 0 VAC Varistors Recognitions To Safety Agency Standards Maida Style Number Continuous Nominal Size Minimum Marking Maximum Ratings Transient Applied Voltage Energy Peak Current 8 x 20|jsec

Contextual Info: PRELIMINARY M IC R O N 1 — - MT18D T 172(S), MT18D(T)472 1 MEG, 4 MEG x 72 DRAM MODULES DRAM 1 MEG, 4 MEG x 72 R i l A n i l l C 8’ 32 MEGABYTE, ECC, 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH IVI ^ U U L C FEATURES MARKING • Timing 60ns access 70ns access

48LC

Abstract: MT18LSDT472
Contextual Info: ADVANCE 2. 4 M E G X 72 S D R A M DIM Ms |U |IC = R O N SYNCHRONOUS DRAM MODULE MT9LSD T 272A MT18LSD(T)472A FEATURES OPTIONS (DE-7) 2 Meg x 72 TSOP (shown), (DE-8) 4 Meg x 72 TSOP, (DE-27) 2 Meg x 72 SOJ, (DE-28) 4 Meg x 72 SOJ MARKING • Components SO J

Contextual Info: ADVANCE 2 MEG X 64 S D R A M SO DIM M IC Z R O fM SMALL-OUTLINE SDRAM MODULE MT8LSDT264H FEATURES OPTIONS 144-Pin Small-Outline DIMM DF-6 umilimi MARKING • Package 144-pin SODIM M (gold) G • F requen cy/C A S Latency 66 M H z /C L = 2 (10ns, 100 M Hz SDRAM s) -66CL2

2sd1628

Contextual Info: Property http://sem con.sanyo. com/en/search/property.php?clcd=106&prod=2SD1628 SANYO s e N c o n d u d û r CO-, L1 S A \Y O Low-Saturaion Voltage Transistors—Low-Saturaion Voltage Transistors Display a list Discrete Devices Product Information Ty pe No.

Contextual Info: 35E D Bi Ö23tj320 001703b 5 WkSIP. NPN Silicon RF Transistor oj _ SIEMENS/ SPCL-, SEMICONDS _/a B F R 106 _ _ • For low-noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers C ESD: Electrostatic discharge sensitive device, observe handling precautions!

sot-23 rks

Abstract: marking code RKS transistors transistor bf 194 NF 841 pcb antenna 1356 Q62702-F1346 bf 194 pin configuration
Contextual Info: BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESD: Electrostatic discharge sensitive device, observe handling precaution!

S100 NPN Transistor

Abstract: 2SC3142 S100
Contextual Info: Ordering num ber:E N 1066A N o .1066A 2SC3142 // NPN Epitaxial Planar Silicon Transistor High-Frequency General-Purpose Amp Applications Features . FBET series. . Compact package enabling compactness of sets. . High fT and small cre. fT=750MHz typ, cre=0.6 typ

BFR106

Abstract: Q62702-F1219 GMA marking Transistor BFR 80 BFr pnp transistor
Contextual Info: BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFr pnp transistor

Abstract: BFR106 Transistor BFR 80 BFR 30 transistor
Contextual Info: BFR 106 NPN Silicon RF Transistor 3
For low noise, high-gain amplifiers
For linear broadband amplifiers
Special application: antenna amplifiers
Complementary type: BFR 194 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: TOSHIBA RN1101 ~ R N 1 106 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1101, RN1102, RN1103, RN1104, RN1105, RN1106 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6Í0.2 O.B±0.1

1069A

Abstract: D1485 2SA1069
Contextual Info: DATA SHEET SILICON POWER TRANSISTORS 2SA1069, 1069A PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1069/1069A are the mold power transistors developed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power

ILS 404 CB

Abstract: 2n706 transistor transistor array K1 marking 3001 8AT transistor 2n706
Contextual Info: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.

Q62702-P5031

Abstract: Q62702-P5050 Q62702-P5205 Q62702-P5206 Q62702-P5207 FA 8 600 SFH 340
Contextual Info: NPN-Silizium-Fototransistor in SMR Gehäuse Silicon NPN Phototransistor in SMR Package SFH 3500/FA SFH 3505/FA SFH 3500 SFH 3500FA SFH 3505 SFH 3505FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1060 nm SFH 3500/3505 und

p5050

Abstract: Q62702-P5031 Q62702-P5050 Q62702-P5205 Q62702-P5206 Q62702-P5207 GEOY6969 Q62702-P5051
Contextual Info: NPN-Silizium-Fototransistor in SMR Gehäuse Silicon NPN Phototransistor in SMR® Package SFH 3500/FA SFH 3505/FA SFH 3500 SFH 3500FA SFH 3505 SFH 3505FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1060 nm SFH 3500/3505 und

Contextual Info: Application Note 1063 Design Consideration with AP3211 Prepared by Ji Jin System Engineering Dept. 1. Introduction 2. Function Block Description The AP3211 is a 1.4MHz fixed frequency, current mode, PWM buck step-down DC-DC converter, capable of driving a 1.5A load with high efficiency,

Contextual Info: Application Note 1063 Design Consideration with AP3211 Prepared by Ji Jin System Engineering Dept. 1. Introduction 2. Function Block Description The AP3211 is a 1.4MHz fixed frequency, current mode, PWM buck step-down DC-DC converter, capable of driving a 1.5A load with high efficiency,

p5050

Abstract: Q62702-P5031 Q62702-P5050 Q62702-P5205 Q62702-P5206 Q62702-P5207
Contextual Info: NPN-Silizium-Fototransistor in SMR Gehäuse Silicon NPN Phototransistor in SMR® Package SFH 3500/FA SFH 3505/FA SFH 3500 SFH 3500FA SFH 3505 SFH 3505FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1060 nm SFH 3500/3505 und