IC MARKING 1005 5 PIN Search Results

1005 Ic Data

Abstract: NESG260234 IC MARKING 1005 1005 TRANSISTOR
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz

1005 Ic Data

Abstract: NESG270034
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz

nec 2501

Abstract: marking NEC rf transistor ic nec 2501 PU10577EJ01V0DS nec 2012 2501 NEC NESG270034 nec npn rf 15 w RF POWER TRANSISTOR NPN
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz

NESG260234

Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz

ic nec 2501

Abstract: NESG270034 NESG270034-T1 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1-AZ IC MARKING 1005 5 pin nec microwave marking NEC rf transistor
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz

NESG270034

Abstract: ic nec 2501 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ 2012 NEC
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz

transistor t5c

Contextual Info: PRELIMINARY MT5C1005 256K X 4 SRAM SRAM WITH OUTPUT ENABLE FEATURES PIN ASSIGNMENT Top View • High speed: 25,35, and 45ns • High performance, low power, CMOS double metal process • Single +5V (±10%) power supply • Easy memory expansion with CE and OE

nec 2012

Abstract: NESG270034 2012 NEC PU10577EJ01V0DS nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz

DSRC 5.8 GHz

Abstract: 5.8 ghz amplifier power 5.8 ghz TRANSMITTER IC
Contextual Info: DATA SHEET NEC's NPN SiGe RF IC UPA901TU IN A 8-PIN LEAD-LESS MINIMOLD FEATURES DESCRIPTION • OUTPUT POWER: Pout = 19 dBm @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz NEC's UPA901TU is a silicon germanium HBT IC designed • LOW POWER: IC = 90 mA @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz

DSRC 5.8 GHz

Abstract: L-1005 865 IC marking video transmitter 2.4 GHz A901 UPA901TU UPA901TU-A UPA901TU-T3 UPA901TU-T3-A 5.8 ghz TRANSMITTER IC
Contextual Info: DATA SHEET NEC's NPN SiGe RF IC UPA901TU IN A 8-PIN LEAD-LESS MINIMOLD FEATURES DESCRIPTION • OUTPUT POWER: Pout = 19 dBm @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz NEC's UPA901TU is a silicon germanium HBT IC designed • LOW POWER: IC = 90 mA @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz

8712 RESISTOR

Abstract: DSRC 5.8 GHz A901 PCB FR-4 5.8 ghz dsrc 5.8 ghz transmitter
Contextual Info: DATA SHEET NPN SiGe RF ANALOG INTEGRATED CIRCUIT µPA901TU NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD DESCRIPTION The µPA901TU is a silicon germanium HBT IC designed for the power amplifier of 5.8 GHz cordless phone and other 5.8 GHz applications. This IC consists of two stage amplifiers and has excellent performance, high efficiency,

Contextual Info: OUTLINE TYPE KVA The signal transmission rate of personal computer peripheral devices and digital devices as represented by USB2.0 devices is being increased year by year, and countermeasures against ESD are critical in high-frequency bands. We have developed Type KVA

JIS-Z-3282

Abstract: JISZ3282 surge absorber
Contextual Info: No. P-KVA-002 DATE 2008-10 PRODUCTS DATA SHEET ESD protection SURGE ABSORBER Type KVA LEAD FREE Size 1005, 1608 OUTLINE The signal transmission rate of personal computer peripheral devices and digital devices as represented by USB2.0 devices is being increased year by year, and countermeasures against ESD are critical in high-frequency bands. We have developed Type KVA

H60S

Abstract: H60A H63A JISZ3282 catalog of oscilloscope
Contextual Info: OUTLINE TYPE KVA The signal transmission rate of personal computer peripheral devices and digital devices as represented by USB2.0 devices is being increased year by year, and countermeasures against ESD are critical in high-frequency bands. We have developed Type KVA

AK1228

Abstract: AK2360A
Contextual Info: [AK1228] AK1228 10~2000MHz Low Noise Mixer 1. General Description AK1228 is a high linearity and low noise mixer. Signal input frequency range coverage is from 10 to 2000MHz and output coverage is from 10 to 1000MHz. AK1228 can be driven by a single ended signal input

Contextual Info: ADVANCE M T 5L C 1005 256K X 4 SRAM |V|IC=RON 256Kx 4 SRAM SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I / O pins are 5V tolerant • High speed: 15,1 7 , 20, 25, 35 and 45ns • High-perform ance, low-power, CM OS double-metal process • Single +3.3V ±0.3V power supply

Contextual Info: Datasheet 4.5V to 25V Input, 1ch Synchronous Buck DC/DC Controller BD95601MUV-LB ●Description BD95601MUV-LB is a high current buck regulator that produces low output voltage 0.75V to 2.0V from a wide input voltage range (4.5V to 25V). High efficiency is

Contextual Info: Datasheet 4.5V to 25V Input 1ch Synchronous Buck DC/DC Controller BD95601MUV-LB General Description Key Specifications       This is the product guarantees long time support in industrial market. BD95601MUV-LB is a high current buck regulator that

RESISTOR ROHM R20

Contextual Info: Datasheet 4.5V to 25V Input, 1ch Synchronous Buck DC/DC Controller BD95601MUV-LB ●Description BD95601MUV-LB is a high current buck regulator that produces low output voltage 0.75V to 2.0V from a wide input voltage range (4.5V to 25V). High efficiency is

Contextual Info: MX0615/MX0615LV Surface Mount Clock Reeves FREQUENCY PRODUCTS Features: • • • • • Frequency Range 1 to 60 MHz Surface Mount Tristate Output Available ASIC Based Design CMOS/TTL Compatible • 14 Pin DIP Compatible Package CLOCKS The CTS Reeves Model MX0615 is a Surface Mount

Contextual Info: Datasheet Switching Regulator with external FET 3.9 to 30V, 2ch Synchronous Rectification Step-Down Controller BD9015KV-M BD9016KV-M General Description Key Specifications „ „ „ „ „ „ The BD9015KV-M and BD9016KV-M are high performance synchronous rectification switching controllers

3225 diode

Contextual Info: Datasheet Switching Regulator with external FET 3.9 to 30V, 2ch Synchronous Rectification Step-Down Controller BD9015KV-M BD9016KV-M General Description Key Specifications „ „ „ „ „ „ The BD9015KV-M and BD9016KV-M are high performance synchronous rectification switching controllers

SG3081

Abstract: sg3081j uA701 TRANSISTOR SMD MARKING CODE 97 transistor smd marking 431 SMD Transistor 431 ac qml-38535 GDIP1-T16 MIL-PRF38535 6 pin TRANSISTOR SMD CODE PA
Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED 02-06-25 R. MONNIN Make correction to the HFE test as specified under table I. - ro THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV SHEET REV STATUS REV A A A A A A A A OF SHEETS

smd TRANSISTOR H2 MARKING CODE

Abstract: smd transistor h25 marking code H10 SMD Transistor SMD transistor MARKING CODE H25 smd transistor marking h10 smd marking H6 TRANSISTOR SMD MARKING CODE H2 MARKING CODE SMD IC marking h100 4953 ic 8 pin
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Change for 1.3 collector-emitter voltage maximum limit. Change limits and conditions for base offset voltage, change in emitter-base offset, collector leakage, base leakage, current gain and gain match tests.