IC LM 3419 Search Results

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

471-1 METAL

Contextual Info: SEMELAB NEW PRODUCT LM 7800-220M SERIES POSITIVE VOLTAGE REGULATOR TO 220 METAL MECHANICAL DATA Dimensions in mm FEATURES • HERMETIC TO 220 METAL PACKAGE It • HIGH RELIABILTY • ISOLATED OPTION • MILITARY OPTION • SCREENING OPTIONS f- P I N 1 - ln p u t

GFB7400D

Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5

Contextual Info: MLX90360  Triaxis Position Sensor IC Features and Benefits Triaxis Hall Technology On Chip Signal Processing for Robust Absolute Position Sensing Simple Magnetic Design Programmable Measurement Range Programmable Linear Transfer Characteristic Multi-points or Piece-Wise-Linear

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

BFC41

Contextual Info: mi BFC41 SEME LAB 4TH GENERATION MOSFET T 0 2 4 7 -A D Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS U Terminal 1 Terminal 3 2 21 IQ 087) 2 59 (0 102) Gate Source L _ . 10 5 (0 4 3 0 ) BSC Terminal 2

sml40g100an

Abstract: PIC204
Contextual Info: SEMELAB PLC = ^ bDE P • 6133157 00006^5 = M O S r a s a SEME SflLB_ P O W E R 4 'T - Z ° t - Z ì IG B T SML40G100AN LAB TTT ■ 1000V 40A N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol

Contextual Info: - 01 331 07 ODGObfib m b bOE D SENELAB PLC •SHLB '"T'3iì*3>l =^i SEME MOS POWER 4 IGBT LAB SML50G60BN SML50G50BN 600V 500V 50A 50A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Parameter Collector-Emitter Voltage

N4020A

Abstract: 3525AN sml4020an sml4025an sml3520an
Contextual Info: SEM ELAB PLC fll3 3 1 fl7 LOE D IM I i^ = G0GD7M2 D7S ISMLB MOS POW ER d T ^ -v s SEME SML4020AN SML3520AN SML4025AN SML3525AN LAB 400V 350V 400V 350V 22.5A 22.5A 20.0A 20.0A 0.20Q 0.20Q 0.25Q 0.25Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: Tc = 25°C unless otherw ise specified.

Contextual Info: mi BFC50 SEME LAB 4TH GENERATION MOSFET T 0 2 4 7 - A D P a cka g e O u tlin e. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Vpss ^D(cont) ^DS(on) 500V 23.0A 0.250 BSC Terminal 1 Terminal 3 Gate Source Terminal 2 ABSOLUTE MAXIMUM RATINGS

6040BN

Abstract: sml5540bn
Contextual Info: _ SEMELAB = ^ bOE PLC 0133107 D ODOObHß b02 • S I1LB MOS POWER 4 = SML6040BN SML5540BN SML6045BN SML5545BN SEM E LAB 600V 550V 600V 550V 18.0A 18.0A 17.0A 17.0A 0.4012 0.4012 0.4512 0.4512 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

Contextual Info: mi itF i IMI SEME BFC13 LAB 4TH GENERATION MOSFET SOT-227 Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS 4 1 (0 1 6 1 ) 4 3 (0 1 6 9 ) I ' 4 0 (0 1 5 7 ) 4 2 ( 0 .1 6 5 ) VDSS I ! 3 3 ( 0 1 2 9) 3 6 ( 0 1 4 3)

SML1001R1BN

Abstract: APT901R1BN 1001R1BN SML1001R3BN SML901R1BN SML901R3BN APT901R
Contextual Info: SEMELAB t>OE PLC - 01 3 3 1 0 7 O O O O b ü O 73S « S m B D MOS POWER 4 SML1001R1BN 1000V 10.5A 1.1 OQ SML901R1BN 900V 10.5A 1.1 OQ SML1001R3BN 1000V 10.0A 1.3012 SML901R3BN 900V 10.0A 1.3012 SEME LAB N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

L601R

Abstract: sml551r3gn
Contextual Info: SEHELAB PLC bQE D Ò Ì33107 INI 0000542 T Sb • S M L B 4 MOS POWER 1 FFË T -3 ° i-'3 SML601R3GN SML551R3GN SML601R6GN SML551R6GN SEME LAB 600V 550V 600V 550V 5.5A 5.5A 5.0A 5.0A 1.30ft 1.30ft 1.60ft 1.60ft N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

TTK SG 2368

Abstract: BV EI 303 3628 7 segment LD 1106 BS LM 6863 D I8253 yx 8018 0308 082c ez 422 BV EI 304 3083 0429 01 2701 00 RELE 12,8 mhz e 4895 lf
Contextual Info: AP-55A APPLICATION NOTE i n t e i A u g u s t 1979 S.A. Distributor E l e c t r o n ic \ \ B u il d in g E l e m e n t s p t y l t d PURVEYORS OF a l l ELECTRONIC COMWNENTS Tel eph on e 7 8 - 9 2 2 1 / 6 P O B o x 4 6 0 9 , Pretoria T e l e x 3 01 8 1 S A

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

Contextual Info: -P P - IP140A IP140 IP7800A IP7800 LM140 = ll7i= SEME I Â Q L M D SERIES SERIES SERIES SERIES SERIES 1 AMP POSITIVE VOLTAGE REGULATOR FEATURES Pin 1 - V|N Pin 2 - V qut Case - Ground K Package - TO-3 Pin 1 - V|N Pin 2 - Vqut Case - Ground R Package - TO-66

Contextual Info: h a - 5 1 5 2 /8 8 3 ffl h a r r is Dual, Low Power O perational Amplifier January 1989 Features D escrip tio n • This Circuit Is Processed In Accordance to M ll-S td 883 and Is Fully Conform ant U nder the Provisions of Paragraph 1.2.1. The H A -5152/883 dual operational am plifier is part of a

TFK U 3212 M

Abstract: TFK U 3212 telefunken rc 890 cd LIN 5642 G tfk 623 ta 8659 cn str f 6268 cd 3313 eo PEX 8603 ORP 12
Contextual Info: Tem ic Sales Offices S e m i c o n d u c t o r s Addresses Europe Denmark T E M IC D ansk c /o A E G Industri A/S R oskildevej 8 -1 0 2 620 A lbeitslund Tel: 45 4 2 6485 22 Fax: 45 43 6262 28 T E M IC T E L E F U N K E N m icro ­ electro n ic G m bH K ruppstrasse 6

212-152

Abstract: NS6W183A NF2W757AR-V1
Contextual Info: General Lighting Automotive C R E A T I V E L I G H T UV 世 界 をもっと 変 え て いく 光 の 未 来 創 造 Display LCD Backlighting Specialty Lighting 2013-1 2013-1 Contents ［ 目 次 ］ 084 ･････････････････････････････････････････････････

Contextual Info: in te i EXTENDED TEMPERATURE 28F016SA 16 MBIT 1 MBIT x 16, 2 MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Operation 40°C to + 85°C User-Selectable 3.3V or 5V VCc 100 ns Maximum Access Time at 5V (Extended Temperature Range) 1 Million Typical Erase Cycles per