Traceability
Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN-07/004 Optional extension of Date Code Marking on standard IC-packages TYPE OF CHANGE: • Optional extension of Date Code D/C Marking on standard IC-packages current D/C: YYWW future D/C: YYWWss YY = year WW = week
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BTN5551N3
Abstract: BTP5401N3
Contextual Info: Spec. No. : C307N3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP5401N3 Description • The BTP5401N3 is designed for general purpose amplification. • Large IC , IC Max = -0.6A
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TRANSISTOR n5401 b
Abstract: n5401 n5401 transistor C307A3 BTN5551A3 BTP5401A3 TRANSISTOR n5401 3n5401
Contextual Info: Spec. No. : C307A3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP5401A3 Description • The BTP5401A3 is designed for general purpose amplification. • Large IC , IC Max = -0.6A
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c307a3btp5401a3-150vbtn5551a3+6ul94v-0transistor n5401 bn5401n5401 transistortransistor n54013n5401
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D2150
Abstract: NPN transistor ECB TO-92 PT10m BTD2150A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2006.03.14 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA
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c848a3btd2150a3100mabtb1424a3+4ul94v-0d2150npn transistor ecb to-92pt10m
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D2150
Abstract: D2150 s BTD2150A3 NPN transistor ECB TO-92 500ma 1A
Contextual Info: CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2005.06.03 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA
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c848a3btd2150a3100mabtb1424a3+4ul94v-0d2150d2150 snpn transistor ecb to-92 500ma 1a
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SOT89 transistor marking 5A
Abstract: BTC5103M3 MARKING 5A SOT-89
Contextual Info: CYStech Electronics Corp. Spec. No. : C651M3 Issued Date : 2003.11.07 Revised Date : Page No. : 1/4 NPN Epitaxial Planar Transistor BTC5103M3 Features • High IC, IC DC =5A • Low VCE(sat), 0.3V typically • Good current gain linearity Symbol Outline BTC5103M3
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c651m3btc5103m3ot-89ul94v-0+2sot89 transistor marking 5amarking 5a sot-89
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b772 p
Abstract: TRANSISTOR b772 p complementary b772 H B772 TO-251 B772 BTD8 b772 B772 SPECIFICATION TRANSISTOR b772 B772 TRANSISTOR
Contextual Info: CYStech Electronics Corp. Spec. No. : C817I3-H Issued Date : 2003.04.02 Revised Date: 2009.02.04 Page:1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772I3 BVCEO IC RCESAT -30V -3A 150mΩ Features • Low VCE sat ,typically -0.3 V at IC / IB = -2A / -0.2A
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c817i3-hbtb772i3btd882i3o-251+12pw350sul94v-0b772 ptransistor b772 pcomplementary b772h b772to-251 b772btd8b772b772 specificationtransistor b772b772 transistor
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C5103
Abstract: transistor C5103 semiconductor C5103 e semiconductor C5103 k c5103 C5103 e C5103 Transistor BTA1952I3 BTC5103 BTC5103I3
Contextual Info: CYStech Electronics Corp. High Speed Switching Transistor BVCEO IC RCESAT BTC5103I3 Features Spec. No. : C651I3 Issued Date : 2005.10.05 Revised Date :2009.02.04 Page No. : 1/5 60V 5A 110mΩ • Low VCE sat , VCE(sat)=0.33 V(typical), at IC / IB = 3A / 0.3A
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btc5103i3c651i3bta1952i3o-251+9ul94v-0c5103transistor c5103semiconductor c5103 esemiconductor c5103k c5103c5103 ec5103 transistorbtc5103
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A1952
Abstract: transistor A1952 MARKING A1952 BTA1952I3 a1952 transistor C601I3 transistor BTC5103I3
Contextual Info: Spec. No. : C601I3 Issued Date : 2005.10.14 Revised Date : 2009.02.04 Page No. : 1/ 5 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTA1952I3 BVCEO IC RCESAT -100V -5A 150mΩ Features • Low VCE sat , VCE(sat)=-0.45 V (typical), at IC / IB = -3A / -0.15A
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D882 TRANSISTOR PIN
Abstract: D882 SPECIFICATION transistor "D882 p" D882 J D882 D882 TRANSISTOR h D882 D882 tp C848I3-H transistor D882 datasheet
Contextual Info: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD882I3 BVCEO IC RCESAT Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2009.02.04 Page No. : 1/6 30V 3A 125mΩ typ. Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A
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btd882i3c848i3-hbtb772i3o-251+11pw350sul94v-0d882 transistor pind882 specificationtransistor "d882 pd882j d882d882 transistorh d882d882 tptransistor d882 datasheet
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transistor A1952
Abstract: A1952 MARKING A1952 a1952 transistor A1952 R Q BTA1952J3 BTC5103J3
Contextual Info: Spec. No. : C601J3 Issued Date : 2004.05.17 Revised Date :2009.02.04 Page No. : 1/6 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTA1952J3 BVCEO IC RCESAT -100V -5A 150mΩ Features • Low VCE sat , VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A
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c601j3bta1952j3-100vbtc5103j3+7o-252ul94v-0transistor a1952a1952marking a1952a1952 transistora1952 r q
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A1640 pnp
Abstract: transistor a1640 A1640 bta1640j3
Contextual Info: Spec. No. : C657J3 Issued Date : 2007.04.04 Revised Date :2009.02.04 Page No. : 1/6 CYStech Electronics Corp. BVCEO IC RCESAT PNP Epitaxial Planar Power Transistor BTA1640J3 -50V -7A 70mΩ Features • Low collector-emitter saturation voltage, VCE sat = -0.4V(max) @ IC = -3A, IB=-0.15A
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D882 TRANSISTOR PIN
Abstract: D882 SPECIFICATION D882 TRANSISTOR TO 252 D882 D882 252 d882 J D882 d882 to252 transistor "D882 p" d882 power transistor
Contextual Info: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD882J3 BVCEO IC RCESAT Spec. No. : C848J3-H Issued Date : 2003.04.02 Revised Date :2009.02.04 Page No. : 1/7 30V 3A 125mΩ typ. Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A
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btd882j3c848j3-hbtb772j3o-252+12pw350usul94v-0d882 transistor pind882 specificationd882 transistorto 252 d882d882252 d882j d882d882 to252transistor "d882 pd882 power transistor
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BTB1260M3
Abstract: BTD5213M3
Contextual Info: CYStech Electronics Corp. Spec. No. : C310M3 Issued Date : 2003.06.27 Revised Date : Page No. : 1/3 NPN Epitaxial Planar Transistor BTD5213M3 Features • High VCEO, VCEO=80V • High IC, IC DC =1A • Low VCE(sat) • Good current gain linearity • Complementary to BTB1260M3
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SHARP LCD MATRIX LM16X21A
Abstract: LM16X21A 14 pin DOT MATRIX LM16X21A LM16*21A lm16x2 LM16*21 LM16X sharp lm16x21a VU meter with LCD lm16x21a TYPE549
Contextual Info: PREPARED APPROVED BY : BY : DATE SHARP DATE ELECTR O N IC SHARP COM PONENTS CROUP SP E C N o. FILE No . LC634 08 ISSU E Apr. PACE 16 SPECIFICATION O lV SIO N D IC a SEM ICO N D U CTO R DIV. • LCD Q A P P L IC A T IO N DIV. ELE C TR O N IC 01V’ COM PONENTS
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lc63416-character/2-linelm16x21axxxxl101+9sharp lcd matrix lm16x21a14 pin dot matrix lm16x21alm16*21alm16x2lm16*21lm16xsharp lm16x21avu meter with lcd lm16x21atype549
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d1760
Abstract: TRANSISTOR d1760 d1760 NPN Transistor C848J3 BTB1184J3 BTD1760J3 BTD1760
Contextual Info: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1760J3 BVCEO IC RCESAT Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2009.02.04 Page No. : 1/6 50V 3A 125mΩ typ. Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A
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btd1760j3c848j3btb1184j3o-252+5ul94v-0d1760transistor d1760d1760 npn transistorbtd1760
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Transistor B1205
Abstract: c815 btb18 B1205 BTB1205I3
Contextual Info: CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB1205I3 BVCEO IC RCESAT Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 1/ 6 -20V -5A 127mΩ typ. Features • Low VCE sat , VCE(sat)=-0.38 V (typical), at IC / IB = -3A / -60mA
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transistor b1412
Abstract: b1412 BTB1412J3 B14-12 to252 footprint wave soldering BTD2118J3
Contextual Info: Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2009.02.04 Page No. : 1/7 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BVCEO IC RCESAT BTB1412J3 -30V -5A 75mΩ typ. Features • Low VCE sat , VCE(sat)=-0.5 V (max), at IC / IB = -4A / -0.1A
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c816j3btb1412j3btd2118j3o-252+5ul94v-0transistor b1412b1412b14-12to252 footprint wave soldering
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murata REEL label lot number
Contextual Info: PREPARED BY: DATE SPEC NO. FILE No. ISSUE CHECKED BY: DATE ELECTRONIC COMPOMENTS AND DEVICES GROUP APPROVED BY: DATE PAGE Dec. 4, 2012 1/22 REPRESENTATIVE DIVISION U SHARP CORPORATION SPECIFICATION SYSTEM DEVICE DIVISION DEVICE SPECIFICATION FOR 5GHz Wireless LAN Front-End IC
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Contextual Info: PREPARED BY: Reference DATE SPEC NO. FILE No. CHECKED BY: ELECTRONIC COMPOMENTS DATE AND DEVICES GROUP APPROVED BY: ISSUE Mar. 28, 2013 PAGE 1/22 REPRESENTATIVE DIVISION SHARP CORPORATION DATE SPECIFICATION SYSTEM DEVICE DIVISION DEVICE SPECIFICATION FOR 2.4GHz Wireless LAN Front-End IC
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murata REEL label lot number
Contextual Info: Reference PREPARED BY: SPEC NO. DATE FILE No. CHECKED BY: DATE ELECTRONIC COMPOMENTS AND DEVICES GROUP APPROVED BY: DATE ISSUE Mar. 28, 2013 PAGE 1/22 REPRESENTATIVE DIVISION SHARP CORPORATION SPECIFICATION SYSTEM DEVICE DIVISION DEVICE SPECIFICATION FOR 5GHz Wireless LAN Front-End IC
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murata REEL label lot number
Contextual Info: PREPARED BY: DATE Reference SPEC NO. FILE No. ISSUE CHECKED BY: DATE ELECTRONIC COMPOMENTS AND DEVICES GROUP APPROVED BY: DATE PAGE Dec. 4, 2012 1/22 REPRESENTATIVE DIVISION SHARP CORPORATION SPECIFICATION SYSTEM DEVICE DIVISION DEVICE SPECIFICATION FOR 2.4GHz Wireless LAN Front-End IC
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ZLP32300
Abstract: IC R249
Contextual Info: Product Update Errata for ZLP32300 Engineering Sample AB Silicon UP007103-0707 Applicable Silicon Revision The errata listed in Table 1 is found in the Revision AB silicon for the ZLP32300 product. This errata sheet is only applicable on date code 0437 or the date before it. Any IC with a later date code does not have this
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H31002P
Abstract: ic2005 h31002 H1N4004 H1N4148 HMBZ5230B HMBZ5235B
Contextual Info: HI-SINCERITY Spec. No. : IC200501 Issued Date : 2005.03.01 Revised Date : 2005.03.25 Page No. : 1/5 MICROELECTRONICS CORP. H31002P BIPOLAR TONE RINGER IC Description 8-Lead Plastic DIP-8 Package Code: P The H31002P is a bipolar integrated circuit. It is designed for telephone bell replacement. It
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