IC D 4242 Search Results

500 watt power circuit diagram uc3825

Abstract: AXP 202 AXP 192 1N4465 unitrode Applications Note U-107 u107 SEM500 USD1140 tesla diode ZENER 500 watt power circuit diagram uc3825 U-110 CURRENT MODE CONTROLLED WATT POWER SUPPLY
Contextual Info: U-110 _ U N IT R O D E APPLICATION NOTE 1.5 MHZ CURRENT MODE IC CONTROLLED 50 WATT POWER SUPPLY Abstract Introduction This application note highlights the development of a 1.5 megahertz current mode IC controlled, 50 watt power supply. Push-pull topology is

424260 NEC

Abstract: 424260-80
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description T h e //P D 42S 4260,424260 are 262,144 w o rd s by 16 b its d y n a m ic C M OS R A M s. T h e fa s t page m o d e and b yte

UC3850

Abstract: UNITRODE TRANSISTORS
Contextual Info: UNITRODE C OR P/U NITR ODE IC ^2» D • *i340Sn D Q Q W 4 D ■ U N I 7" • ~ ^>E ' \\~31 ' LINEAR INTEGRATED CIRCUITS UC3850 Sw itching Power Supply Control System FEATURES • Single Chip PWM Control System • Programmable Under-Voltage Sense • Remote Enable with Soft-Start

PLN 2032

Abstract: TO-226A to-237
Contextual Info: TELEDYNE COMPONENTS aaE j> o aii?t.Qa ûüab44i a T-31-25 SD3300, SD3301 SE M IC O N D U C TO R N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION SD33Q0CHP SD3301CHP TO-205AF TO-39 Hermetic Package SD3300Ht> SD3301HB TO-226AA (TO-92) Plastic Package

capacitor AA8

Abstract: LC75711E Data Display DL 216 Sanyo lot code Capacitor AM13E LC75710 ca5044
Contextual Info: b3E D LC75710E, 75711E T T T T O T b D D l l bO S fll3 M T S A J S A N Y O S E M IC O N D U C T O R C O R P ♦ C M O S LSI 3159 Dot-matrix VFD Controller/Driver OVERVIEW PINOUT The LC75710E and LC75711E are 1- to 16-character dot-matrix vacuum-fluorescent display VFD control­

424256 pin out

Abstract: TIO 872-M 424256 pd42256 nec 424256 DG342
Contextual Info: blE ]> • bM27525 D O a m 1!? DMT MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. N E C 0. 3 - ELECTRONICS INC Description Pin Configuration T h e M C -4 2 5 1 2 A 3 6 a n d th e M C -4 2 4 5 1 2 A 3 6 a re d y n a m ic

Contextual Info: PFC Mint Specifications ty p ic a l a t 2 5 °C , n o m in a l lin e, 7 5 % lo a d , u n le s s o th e rw is e s p e c ifie d PFC Mini AC-DC Switcher Up to 1500 Watts Features • Fan Cooled ■ Power Factor Corrected ■ 1-6 Outputs ■ Enable/D isable

424210-60-G

Abstract: d424210
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT « P D 424210 4 M -BIT DYNAMIC RAM 256K-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The f i PD424210 is a 262,144 words by 16 bits CM OS dynam ic RAM with optional EDO. EDO is a kind of page mode and is useful for the read operation.

Contextual Info: /Turm _ LT1109 TECHNOLOGY M ic ro p o w e r Low C ost D C -to-D C C o n v e rte r Fixed 5V, 12V F€flTUR€S D C S C R IPTIO n • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT1109-5 and LT1109-12 are simple step-up DC-DC converters. Available in 3-lead TO-92,8-pin SO or miniDIP

42-10A

Contextual Info: NEC MOS INTEGRATED CIRCUIT ju P D 4 2 S 4 2 1 0 A , 4 2 4 2 1 0 A 4 M BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description ThepPD 42S4210A , 424210 A are 262 144 w ords by 16 bits dynam ic CMOS RAMs w ith optional hyper page

r927

Abstract: colour tv yoke TDA1170 TDA1170 Application yoke diagram colour tv kit circuit diagram flyback tv tda 1170 tda1270 tv circuit board 12-PIN
Contextual Info: TDA1170 • TDA1270 TV VERTICAL DEFLECTION SYSTEMS FAIRCHILD LINEAR INTEGRATED C IR C U IT G E N E R A L D E S C R IP TIO N - T h e T D A 1 1 7 0 a n d T D A 1 2 7 0 a re m o n o lith ic in te g ra te d c ir c u its d e s ig n e d fo r u s e in T V v e rtic a l d e fle c tio n s y s te m s . T h e y a re m a n u fa c tu re d u s in g

TDA1170

Abstract: TDA1170 Application r927 tda1270 colour tv yoke flyback tv tda 1170 12-PIN c 4237
Contextual Info: TDA1170 • TDA1270 TV VERTICAL DEFLECTION SYSTEMS FAIRCHILD LINEAR INTEGRATED C IR C U IT G E N E R A L D E S C R IP TIO N - T h e T D A 1 1 7 0 a n d T D A 1 2 7 0 a re m o n o lith ic in te g ra te d c ir c u its d e s ig n e d fo r u s e in T V v e rtic a l d e fle c tio n s y s te m s . T h e y a re m a n u fa c tu re d u s in g

8 WAY RESISTOR PACK

Abstract: 3.7v battery charger circuit diagram
Contextual Info: UCC3952-1/-2/-3/-4 U IM IT R O D E ADVANCED INFORMATION Enhanced Single Cell Lithium-Ion Battery Protection IC FEATURES DESCRIPTION • Protects sensitive Lithium ion cells from over-charging and over-discharging The UCC3952 is a monolithic BiCMOS lithium-ion battery protection circuit

ns 4248

Abstract: 74LS196N 54LS196 LS196 54LS197 74LS196 74LS197 DM54 DM54LS196 DM74LS196
Contextual Info: DM54LS196/DM74LS196, DM54LS197/DM74LS197 National Semiconductor DM54LS196/DM74LS196, DM54LS197/DM74LS197 Presettable Decade and Binary Counters General Description These h ig h-speed c o u n te rs c o n s is t o f fo u r d-c co up le d, m a ste r-sla ve flip -flo p s w h ic h are in te rn a lly in te rc o n ­

42s4260

Contextual Info: N E C ELECTRONICS INC blE D N EC NEC Electronics Inc. • b427525 0033037 053 « N E C E #iPD424260A/L, 42S4260A/L 262,144 X 16-Bit Dynamic CMOS RAM 17 Description The /JPD424260A/L and /JPD42S4260A/L are fast-page dynam ic RAMs organized as 262,144 words by 16 bits

UNITRODE TRANSISTORS

Abstract: UC1704 UC3704
Contextual Info: UNITRODE CORP/UNITRODE IC 'JSD D • W A S IR LI N t AK IN Ih U K A Ih U Ü IK C U IIS Bridge Transducer Switch 0010002 1 UU1/U4 UC3704 , FEATURES • Dual matched current sources • High-gain differential sensing circuit • Wide common-mode input capability

UCC1582

Abstract: UCC3582
Contextual Info: IN T E G R A T E D C I R C U IT S UCC1582 UCC2582 UCC3582 UNITRODE High Efficiency Synchronous, Step Down Controller FEATURES BiCMOS Voltage Mode PWM Controller 4.5V to 13V Input Voltage Range Power Saving Mode at Light Load Sleep Mode Ic = 15|xA typ Lossless Short Circuit

D4242

Contextual Info: ’*V W NEC Electronics Inc. fiPD424263A/L, 42S4263A/L 262,144 X 16-Bit D ynam ic C M O S RAM Prelim inary Information Description The /uPD424263A/L and /JPD42S4263A/L are fast-page dynamic RAMs with the write-per-bit option, organized as 262,144 words by 16 bits, and designed to operate

UCOP02

Contextual Info: UNITRODE CO RP / U N I T R O DE IC ‘ISD D • =134651=1 Q01Q1S2 LINEAR INTEGRATED CIRCUITS Inverting High Speed Operational Amplifier u u u r v r UCOPOIC UCOP01G UCOP01H FEATURES DESCRIPTION • Fast Settling Time— 1¡xsec to 0.1% The UCOP-01 high speed operational amplifier features high slew rate and fast

HG22

Contextual Info: UNITROSE COR P/ UN IT ROD? IC • £]> D ■ W i S l ' i 001011b 3 H U N I LINEAR INTEGRATED CIRCUITS UC5180/5181 -0 3 O ctal Line Receiver FEATURES 4 • Meets EIA 232D/423A/422A and CCITT V.10, V.11, V.28 • Single + 5 V Supply— TTL Compatible Outputs

IAGCD

Abstract: 32P4910 ssi32p4910 32P4910A
Contextual Info: é é m s v s tm ' A TDK Group/Company SSI 32P4910A PRML Read Channel with PR4,8/9 ENDEC, 4-burst Servo A d v a n c e In f o r m a t io n February 1996 DESCRIPTION FEATURES The SSI 32P4910A is a high performance BiCMOS read channel IC that provides all of the functions

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT jU P D 4 2 4 2 1 0 4 M -BIT DYNAM IC RAM 256K-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The ¿¡PD424210 is a 262,144 words by 16 bits CMOS dynamic RAM with optional EDO. EDO is a kind of page mode and is useful for the read operation.

SEEQ 52B33

Abstract: 52B23 memory 52B13 WE VQE 11 E WE VQE 24 E 19Jl WE VQE 23 E SEEQ 52B23 5252 S 52B33
Contextual Info: v. O c <F V 000701 r ^ %>' ,J> 7 52 B 13/ 52 B 23/ 52B 33 52B 13H / 52 B 23 H / 52 B 33H Electrically Erasable RO M March 1983 P R E L IM IN A R Y D A T A S H E E T Features • Input Latches ■ ■ ■ ■ ■ ■ ■ ■ th e o th e r d e v ic e s in th e fa m ily re q u ire o n ly a T TL

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT iu P D 4 2 4 2 6 0 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD424260 is a 262,144 w ords by 16 bits dynam ic CM OS RAM. The fast page mode and byte read/write mode capability realize high speed access and low pow er consum ption.