IC 817 B Search Results

2SA817

Abstract: 2SA817Y 2SA817-Y 2SC1627
Contextual Info: 5/UD>PNPl£9*S/P;WBh^:/2tt5> PCTfiiC 2SA 817 ^ L IC O N PNP EPITAXIAL TENTATIVE o m m & m m m O «£EJtKSffl o Driver o Voltage Stage Amplifier Amplifier 2SC162? t ^ Applications Applications y ') 'JlCiilito 2O~2 5 f B 7 y 7 0 F 7 ^ ' - | t f a t t „ Complementary

C1740

Abstract: ic 817 Q62702-C1740 C1505 Q 817 c1740 npn 6CS marking code sot 23 B 817 C1738 Q62702-C1505
Contextual Info: NPN Silicon AF Transistors ● ● ● ● ● BC 817 BC 818 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 807, BC 808 PNP Type Marking Ordering Code Pin Configuration

ic 817

Abstract: Q62702-C1740 marking 6bs 6CS marking code sot 23 Q62702-C1505 Q62702-C1690 Q62702-C1732 Q62702-C1738 Q62702-C1739 bc 170
Contextual Info: NPN Silicon AF Transistors ● ● ● ● ● BC 817 BC 818 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 807, BC 808 PNP 2 3 1 Type Marking Ordering Code Pin Configuration

BC817-40

Abstract: 6as sot23 BC807 BC808 BC817 BC817-16 BC817-25 BC818 BC818-16 BC818-25
Contextual Info: BC817, BC818 NPN Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage 2
Complementary types: BC807, BC808 PNP 1 Type Marking Pin Configuration BC817-16 6As 1=B 2=E

ic 817

Abstract: BC807 BC808 BC817 BC817-16 BC817-25 BC817-40 BC818 BC818-16 BC818-25
Contextual Info: BC817, BC818 NPN Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage 2
Complementary types: BC807, BC808 PNP 1 Type Marking Pin Configuration BC817-16 6As 1=B 2=E

ic 817

Abstract: BC817UPN transistor 1Bs SC74 817 transistor 817 c w
Contextual Info: BC817UPN NPN/PNP Silicon Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 C1 B2 E2 6 5 4

817-U

Abstract: 6Bs transistor
Contextual Info: BC 817U NPN Silicon Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197

marking 6bs

Abstract: ic 817 BC817U SC74
Contextual Info: BC817U NPN Silicon Transistor Array
For AF input stages and driver applications 5 4 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2

marking 6bs

Abstract: ic 817 EHP00223 BC817U SC74
Contextual Info: BC817U NPN Silicon Transistor Array
For AF input stages and driver applications 5 4 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2

transistor 1Bs

Contextual Info: BC817UPN NPN/PNP Silicon Transistor Array
For AF input stages and driver applications 5 4 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 C1 B2 E2 6 5 4 VPW09197

transistor 1Bs

Abstract: ic 817 BC817UPN
Contextual Info: BC 817U PN NPN/PNP Silicon Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 C1 B2 E2 6 5

transistor 1Bs

Abstract: ic 817 1BS transistor marking 1Bs BC817UPN SC74
Contextual Info: BC817UPN NPN/PNP Silicon Transistor Array
For AF input stages and driver applications 5 4 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 Tape loading orientation

BC817

Abstract: BC818
Contextual Info: BC 817 / BC 818 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1

1BS transistor

Contextual Info: BC817UPN NPN/PNP Silicon Transistor Array
For AF input stages and driver applications 5 4 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 Tape loading orientation

BC817-40 INFINEON

Abstract: 4 pin 817 BC817 INFINEON
Contextual Info: BC817, BC818 NPN Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC807, BC808 PNP 1 Type Marking Pin Configuration BC817-16

Contextual Info: Hardware Documentation Data Sheet HAL 817 Programmable Linear Hall-Effect Sensor Edition Sept. 22, 2011 DSH000156_002EN HAL 817 DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software

Contextual Info: BC817U NPN Silicon Transistor Array
For AF input stages and driver applications 5 4 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2

VSO05561

Abstract: 818-25W
Contextual Info: BC 817W, BC 818W NPN Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC 807W, BC 808W PNP 1 Pin Configuration VSO05561 Type

bc817

Contextual Info: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration

bc 807

Contextual Info: BC 817 / BC 818 Surface mount NPN-Si-Epitaxial PlanarTransistors NPN-Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 310 mW Plastic case Kunststoffgehäuse SOT-23 TO-236 Weight approx. – Gewicht ca. 0.01 g

marking 6bs

Abstract: sot323 marking code A.C
Contextual Info: BC817W, BC818W NPN Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC807W, BC808W PNP 1 Pin Configuration VSO05561 Type Marking

marking CODE 1BS

Abstract: 1BS transistor BC817UPN BCW66H SC74 marking code w1s transistor 1Bs TRANSISTOR marking CB code
Contextual Info: BC817UPN NPN Silicon AF Transistor Array • For AF stages and driver applications 4 • High current gain 3 5 2 6 • Low collector-emitter saturation voltage 1 • Two galvanic internal isolated NPN/PNP transistors in one package • Pb-free (RoHS compliant) package 1)

BC818C

Abstract: marking 6E B 817 c
Contextual Info: NPN Silicon AF Transistors BC 817 BC 818 For general AF a pplications High c o lle c to r cu rre n t High cu rre n t gain L o w c o lle c to r-e m itte r saturation voltage C om plem entary typ e s: BC 807, BC 808 PNP Type B B C 817-16 B B C 817-25 B B C 817-40

6as sot23

Abstract: marking 6bs 1B marking transistor marking 6Bs BC817K-40W
Contextual Info: BC817K./BC818K. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Pb-free RoHS compliant package • Qualified according AEC Q101 Type Marking Pin Configuration