IC 7410 G Search Results

7400 fan-out

Abstract: 7402 nor 7491 8-bit 7490 Decade Counter TTL 7400 TTL 7400 AND propagation delay TTL 7400 propagation delay TTL 7475 TTL 7490 7402 J-K Flip-Flop
Contextual Info: Logic Integrateci Circuits, MIC 7400 Series TTL G a te s in order of gates per package Type M IC M IC M IC M IC M IC M IC M IC M IC M IC M IC M IC M IC 7430 7453 7454 7420 7440 7450 7451 7460 7410 7400 7401 7402 Positive logic definition Gates per package

a42e

Abstract: IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn
Contextual Info: Small Signal Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless

IC 7402, 7404, 7408, 7432, 7400

Abstract: TTL IC 7405 7400 logic gate ic IC AND GATE 7408 ic 7400 logic symbol 7408 AND GATE fan in 9N01 IC 7400 nand gate 7408, 7404, 7486, 7432 IC 7404 hex inverter
Contextual Info: SSI • GATES, BUFFERS AND INVERTERS LOW POWER tpcj = 20 ns Pd = 2 mW per Gate STANDARD tpd = 10 ns Pd = 10 mW per Gate 0°C to +70° C and -5 5 ° to +125°C 0° to +70° C -5 5 ° t o +125° C 9 L00 9N00/7400 9N00/5400 9N01/7401 9N01/5401 9N03/7403 9N03/5403

7404 ttl inverter

Abstract: 7402 TTL 7404 7404 hex inverter TTL 7410 TTL 7420 TTL 7430 TTL 7440 TTL 7402 TTL 7400
Contextual Info: Digital Integrated Circuits T T L Gates N K T provides a range o f standard T T L gates, n o rm a lly supplied in plastic d u al-in-lin e packages. T hey are fu lly c o m p a tib le w ith s im ila rly coded '7 4 0 0 series' devices. DIC 7400 Q U A D 2 in p u t N A N D

AGP7500

Abstract: BZ-2R24-A2 DIC093346
Contextual Info: H MICRO SWITCH F R E E P O R T IL L IN O IS . U S A A D IVISIO N OF HONevW ELL BZ-2R24-A2 SW ITCH-BASIC AGP7500 FID. MF«. COOK l l « N 04 < I C M - CVJ _ i N o CÛ? 5c Zm n CO REVISIONS A ICO >7410 C H » APRIL» 22 NOV ^ » MAM ¿a mar a* G£ D1C093346

7410PC

Abstract: 74LS10PC NAND Gate 3-Input 7410 7410P 7410DC 74LS10DC 5410FM 74H10PC 74LS10P 74S10PC
Contextual Info: 10 C O N N E C T IO N D IA G R A M S P IN O U T A "54/7410 ^ 4 H /7 4 H 1 0 J-'/osl’ K54S /74S 10 û/'o ^ 7 > ^ 4 L S /7 4 L S 1 0 ^ 7 7 TRIPLE 3-INPUT NAND GATE O R D E R IN G C O D E: See S e ctio n 9 PIN PKGS C O M M E R C IA L G R A D E M ILITA R Y G R A D E

Contextual Info: C A TA LO G L IS T IN G H MICRO SWITCH SWITCH - BASIC F R E E P O R T . IL L IN O IS . U .S .A . A D IV IS IO N O F H O N E Y W E L L BZ-3RS FED . M FG . CODE 9 1 9 2 9 HAR DENED S T E E L PLUNGER co o : ro o i NI CD LU CU < CL l.l 101.020 O P E R A T IN G

LC7450

Abstract: LC7410-XX IR REMOTE CONTROL IC servo Speed servo Drum Capstan System
Contextual Info: 7997076 SANYO SANYO SEMICONDUCTOR CORP SEMICONDUCTOR CORP 7t» 7Ti7D7fc. jLG7410 ,7 4 1 5 D f-7 7 - C 7 - / 3 76C 0 1 9 4 7 □ □ 0 1 ci4 7 M | 7 ". 7 7 - / / C IR C U IT D R A W IN G N 0.4O 66 c-m o s l s i VTR C/2/VHSD SERVO CIRCUIT 305K LC 7410 General Description

ESM260

Abstract: ESM259 ESM213
Contextual Info: ESM 259 ESM 260 PNP SILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE TR AN S IS TO R S D A R L IN G T O N S IL IC IU M PNP, B A S E E P IT A X IE S Compì, of ESM 213, 214 P R E L IM IN A R Y D A TA N O T IC E PR EL IM IN A IR E Monolithic construction

ESM261

Abstract: esm262 ci 7410 ESM 261
Contextual Info: ESM 261 ESM 262 PNP SILICON DARLINGTON TRANSISTORS, EPITAXIAL BASE TR AN S IS TO R S D A R L IN G T O N S IL IC IU M PNP, B A S E E P IT A X IE E Compi. of ESM 217, 218 PRELIM INARY DATA N O T IC E P R E L IM IN A IR E Monolithic construction C o nstruction m o n o lith iq u e

esm 117

Abstract: ESM218 TRANSISTORS SILICIUM, BASE EPITAXIEE
Contextual Info: ESM 217 ESM 218 NPN SILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE TRANSISTORS SILIC IU M D ARLIN G TO N NPN, BASE EPITAXfEE Compl. o f ESM 2 6 1 ,2 6 2 P R E L IM IN A R Y D A TA NOTICE P R E LIM IN A IR E Monolithic construction Construction m onolithique

ESM214

Abstract: ESM213 ESM259 EST 213
Contextual Info: ESM 213 ESM 214 NPN S ILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE TR AN S IS TO R S D A R L IN G T O N S IL IC IU M N P N , B A S E E P IT A X IE E Compì, o f ESM 259, 260 P R E L IM IN A R Y D A TA N O T IC E P R E L IM IN A IR E

W313

Contextual Info: ESM 141 ESM 142 PNP SILICON TRANSISTORS, EPITAXIAL BASE: TRANSISTORS S ILIC IU M PNP, BASE EPITAXIES Compì, of 2N 6099, 2N 6101 PRELIM INARY DATA NOTICE P R ELIM IN AIR E - LF large signal power amplification Am plification BF grands signaux de puissance

LT 238

Abstract: BD 238 BD234
Contextual Info: PNP SILICON TRANSISTORS, EPITAXIAL BASE BD 234 TRANSISTORS S IL IC IU M PNP, BASE E P IT A X IE S g Q 2 3 0 BD 238 Compl. of BD 233, 235, 237 PRELIMINARY DATA N O TICE P R E LIM IN A IR E These transistors are intended for complemen­ tary or quasi complementary symetry ampli­

Contextual Info: TYPES SN5410, SN54H10, SN54L10, SN54LS10, SN54S10, SN7410, SN74H10, SN74LS10, SN74S10 TRIPLE 3-INPUT POSITIVE-NAND GATES R E V IS E D D E C E M B ER 19B3 [ • Package Options Include Both Plastic and Ceramic Chip Carriers in Addition to Plastic and Ceramic DIPs

DM9000C

Abstract: "Pin for Pin" 400S 9003C DM7410 Fairchild 9003
Contextual Info: DM9003C National ÆÜASemiconductor \ DM9003C Triple 3-Input NAND Gates General Description Fo r th e new d e s ig n s , th e 54/74 fa m ilie s o f TTL c irc u its o f­ fe r th e in d u s try 's b ro a d e s t c h o ic e o f h ig h -p e rfo rm a n c e d ig ita l c irc u its . S eries 54774 p in -fo r-p in e q u iv a le n t is

Contextual Info: AVANTEK INC 44E D 0 « w n K H im n b b 3700 to 4200 MHz APPLICATIONS • 1.5:1 VSWR • 4,5 dB Conversion Loss/Noise Figure • Low Cost • Low Cost, High Performance • 3,7 to 4.2 GHz Downconverter in TVRO Applications • Instrumentation and Test Equipment

54L10

Abstract: IC-133 SN74H10
Contextual Info: TYPES SN5410, SN54H10, SN54L10, SN54LS10, SN54S10. SN7410, SN74H10, SN74LS10, SN74S10 TRIPLE 3-INPUT POSITIVE-NAND GATES R EV ISED DECEM BER 1983 Package Options Include Both Plastic and Ceram ic Chip Carriers in Addition to Plastic and Ceramic DIPs SIM5 4 1 0 , S N B 4 H 1 0 , S N 5 4 L 1 0 . . . J P A C K A G E

BD - 100 V

Abstract: transistor BD 522 BD 680 vertical tv deflexion bd 676 bd676 bd678 darlington bd deflexion LB 676
Contextual Info: DU D/D, M PNP S ILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE BD 678. A TRANSISTORS DARLIN G TO N SILIC IU M PNP, BASE EPITAXIES BD 680,' A Compì, of BD 67 5, A ; BD 67 7, A ; BD 67 9, A P R E L IM IN A R Y D A TA NOTICE P R ELIM IN A IR E

2N5496

Abstract: 5492 2N5492 5494 2n6496 2N5494 2N5490
Contextual Info: 2N 5490 2 N 5492 2N 5494 2I\I 5496 NPN SILICO N TR A N SISTO R , HOMOBASE TR AN S IS TO R NPN S IL IC IU M , H O M O B ASE Compi. o f 2N 6107 series P R E L IM IN A R Y D A T A NOTICE P R E LIM IN AIR E - LF large signal power amplification A m plification BF grands signaux de puissance

LG 57A

Contextual Info: APT40M70LVR • R A dvanced W .\A p o w e r Te c h n o lo g y " 400v 57 a 0 .070q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: BUCHANAN M E T R IC NEMA Terminal Blocks Dimensions are millimeters over inches Catalog 1307612 Revised 7-01 600 and 700 Series, Medium Duty Accessories MOUNTING CHANNEL MINIATURE STEEL CHANNEL Catalog Number 12 60 63-BU 60-B-36 64 67 3 feet 6 feet 3 feet

NAND Gate 3-Input 7410

Abstract: SN5455 L510 Diode sn54l10 SN74H10 SN74LS10 SN54L10-1 chip sn7410 SN5410 SN54LS10
Contextual Info: TYPES SN5410, SN54H10, SN54L10, SN54LS10, SN54S10, SN7410, SN74H10, SN74LS10, SN74S10 TRIPLE 3-INPUT POSITIVE-NAND GATES REVISED DECEMBER 19B3 Package Options Include Both Plastic and Ceramic Chip Carriers in Addition to Plastic and Ceramic DIPs S N 5 4 1 0 , S N 5 4 H 1 0 . S N 5 4 L 1 0 -1 P A C K A G E

APT40M70JVR

Abstract: EN805
Contextual Info: • R A dvan c ed W/Æ P ow er Techno lo g y APT40M70JVR 4oov 53a o.o7oq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®