IC 630 ONLY WRITTEN APPLICATION 16 PIN Search Results

6CS transistor

Abstract: transistor 6cs
Contextual Info: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration

egs SOT23

Abstract: BC817K-40 thermal resistance
Contextual Info: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration

BC817-40 INFINEON

Abstract: Thermal CUTOFF 6AS SOT23
Contextual Info: BC817, BC818 NPN Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage 2
Complementary types: BC807, BC808 PNP 1 Type Marking Pin Configuration BC817-16 6As 1=B 2=E

Contextual Info: BC817, BC818 NPN Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC807, BC808 PNP 1 Type Marking Pin Configuration BC817-16

Contextual Info: BC817W, BC818W NPN Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage 2
Complementary types: BC807W, BC808W PNP 1 Pin Configuration VSO05561 Type Marking Package

Contextual Info: BC807, BC808 PNP Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Comlementary types: BC817, BC818 NPN 1 Type Marking Pin Configuration BC807-16 5As

Contextual Info: BC807W, BC808W PNP Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage 2
Complementary types: BC817W, BC818W NPN 1 Pin Configuration VSO05561 Type Marking Package

Contextual Info: BC807, BC808 PNP Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage 2
Comlementary types: BC817, BC818 NPN 1 Type Marking Pin Configuration BC807-16 5As 1=B 2=E

Contextual Info: BC807W, BC808W PNP Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC817W, BC818W NPN 1 Pin Configuration VSO05561 Type Marking

marking 6bs

Abstract: sot323 marking code A.C
Contextual Info: BC817W, BC818W NPN Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC807W, BC808W PNP 1 Pin Configuration VSO05561 Type Marking

Contextual Info: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66G EGs 1=B

bcw66

Contextual Info: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66KF* EFs 1=B

egs SOT23

Contextual Info: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66KF* EFs 1=B

BC817-40 INFINEON

Abstract: 4 pin 817 BC817 INFINEON
Contextual Info: BC817, BC818 NPN Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC807, BC808 PNP 1 Type Marking Pin Configuration BC817-16

Contextual Info: BC807W, BC808W PNP Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC817W, BC818W NPN 1 Pin Configuration VSO05561 Type Marking

6as sot23

Abstract: marking 6bs 1B marking transistor marking 6Bs BC817K-40W
Contextual Info: BC817K./BC818K. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Pb-free RoHS compliant package • Qualified according AEC Q101 Type Marking Pin Configuration

5Cs transistor

Abstract: 5BS transistor marking 5bs 5as package package marking 5as transistor 5bs
Contextual Info: BC807./ BC808. PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817./W, BC818./W NPN Type Marking Pin Configuration BC807-16

transistor 6cs

Abstract: 6CS transistor 6as sot23 marking 6CS BC808 BC817 6bs transistor BC817-25 BC817-25W BC817K-16
Contextual Info: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration

bc817

Contextual Info: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration

MARKING SOT23 dbs

Contextual Info: BCW67, BCW68 PNP Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary types: BCW66. NPN Type Marking Pin Configuration Package BCW67A DAs 1=B 2=E 3=C SOT23 BCW67B

MCM91000

Abstract: motorola mcm91000s
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 MCM9L1000 1Mx9 Bit Dynamic Random Access Memory Module The MCM 91000 and MCM9L1000 are 9M dynam ic random access memory DRAM modules organized as 1,048,576 x 9 bits. The modules are 30-lead single-in-line memory m odules (SIMM) or 30-pin single-in-line packages (SIP)

Contextual Info: BC847S BC847S E2 B2 C1 C2 SC70-6 Mark: 1C B1 pin #1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. NPN Multi-Chip General Purpose Amplifier

BC847S

Abstract: SC70-6
Contextual Info: BC847S BC847S E2 B2 C1 C2 SC70-6 Mark: 1C B1 pin #1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. NPN Multi-Chip General Purpose Amplifier

UBA2021T

Abstract: UBA2021P philips cfl UBA2021 transistor smd CF rs
Contextual Info: INTEGRATED CIRCUITS DATA SHEET UBA2021 630 V driver IC for CFL and TL lamps Product specification Supersedes data of 2001 Jan 30 2002 Aug 02 Philips Semiconductors Product specification 630 V driver IC for CFL and TL lamps UBA2021 FEATURES GENERAL DESCRIPTION