IC 555 ARCHITECTURE Search Results
IC 555 ARCHITECTURE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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| AM9513ADIB |
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AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 |
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| MD8253/BJA |
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8253 - Interval Timer, Programmable - Dual marked (5962-8752002JA) |
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| MD8254/B |
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8254 - Programmable Interval Timer |
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| MC6840CP |
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MC6840 - Programmable Timer Module(PTM) |
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IC 555 ARCHITECTURE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 1 nppon7 I CHEIIhCOWl MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS LXY f:W ! : : " b i'iiiiA b iÜ ÏV : : i ' “ -V : : 'O S 'S V fm m iv ¥j¥:5: lower Z downsized •N ew ly innovative electrolyle and internal architecture are employed •Endurance with ripple current: 105“C 2000 to 8000 hours |
OCR Scan |
10to63Vrfc 10OOuF 10Vdo 63Vdc 120Hz) 16X20 16X25 16X30 16X35 16X40 | |
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Contextual Info: PRELIMINARY Am29LL800T/Am29LL800B AMDZ1 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically |
OCR Scan |
Am29LL800T/Am29LL800B 8-Bit/524 16-Bit) 48-pin 29LV200â LL800â Am29LL800T | |
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Contextual Info: G ' S f * MINIATURE aluminum e le c tro ly tic cap a citors ' •N e w ly innovative electrolyte and internal architecture are employed •Low est impedance at high frequency range • Endurance with ripple current: 105°C 2000 to 8000 hours •Solvent-proof type |
OCR Scan |
63Vdc 120Hz) | |
80000h8Contextual Info: P R E L IM IN A R Y Am29 LL800T/Am29 LL800B A M D tl 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically |
OCR Scan |
LL800T/Am29 LL800B Am29LL800B 10000h, 20000h, 06000h. 30000h, 08000h. 40000h, 10OOOh. 80000h8 | |
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Contextual Info: PRELIMINARY AMDH Am29LV200T/Am29LV200B 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 3.0 Volt-only Sector Architecture Flash Mem ory DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation ■ — Embedded Erase algorithms autom atically preprogram and erase the entire chip or any |
OCR Scan |
Am29LV200T/Am29LV200B 8-Bit/131 16-Bit) 29LV200T/A 29LV200B | |
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Contextual Info: PRELIMINARY A M D * Am29LL800T/Am29LL800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically |
OCR Scan |
Am29LL800T/Am29LL800B 8-Bit/524 16-Bit) 48-pin 10000h, 04000h. 06000h. 30000h, 08000h. 40000h, | |
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Contextual Info: PRELIMINARY — Am29LV200T/Am29LV200B A M D tl 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 3.0 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ ■ — Extended voltage range: 2.7 to 3.6 volt read and |
OCR Scan |
Am29LV200T/Am29LV200B 8-Bit/131 16-Bit) | |
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Contextual Info: PRELIMINARY — Am29LV200T/Am29LV200B A M D tl 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 3.0 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ ■ — Extended voltage range: 2.7 to 3.6 volt read and |
OCR Scan |
Am29LV200T/Am29LV200B 8-Bit/131 16-Bit) perform90R | |
WS256N
Abstract: ws256n spansion 28F256L18 S29WS256N S29WS-N WS256 Spansion
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Original |
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29f800bb
Abstract: IC 555 architecture 29f800bb55 29F800BB-55
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OCR Scan |
Am29F800B 8-Bit/512 16-Bit) Am29F800 29f800bb IC 555 architecture 29f800bb55 29F800BB-55 | |
IC 555 architecture
Abstract: S29AL016D S29AL032D S29GL064A application note ic 555
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29lv200
Abstract: AM29LV200BT-50R IC 555 architecture
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OCR Scan |
Am29LV200B 8-Bit/128 16-Bit) 29LV200 20-year AM29LV200BT-50R IC 555 architecture | |
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Contextual Info: PRELIMINARY AMD£I AmMCOXXA 2, 4, or 8 Megabyte 5.0 Volt-only Flash Miniature Card DISTINCTIVE CHARACTERISTICS • 2, 4, or 8 Mbytes of addressable Flash memory ■ 5.0 Volt-only, single power supply operation ■ Available in industrial temperature grade |
OCR Scan |
60-pad 100h10Bh. | |
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Contextual Info: PRELIM IN ARY AMD£I AmMCOXXA 2, 4, or 8 Megabyte 5.0 Volt-only Flash Miniature Card DISTINCTIVE CHARACTERISTICS • 2, 4, or 8 Mbytes of addressable Flash m em ory ■ 5.0 Volt-only, single power supply operation ■ Available in industrial tem perature grade |
OCR Scan |
60-pad | |
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29lv400
Abstract: CP 2AA
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OCR Scan |
Am29LV400T/Am29LV400B 29LV400 20514B. CP 2AA | |
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Contextual Info: AMD£I Am29LV200B 2 M egabit 256 K x 8-B it/I 28 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Single pow er supply operation Em bedded A lgorithm s — 2.7 to 3.6 volt read and w rite operations for battery-powered applications |
OCR Scan |
Am29LV200B 16-Bit) Am29LV200 Am29LV200BT-70 Am29LV200BB-70 | |
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Contextual Info: AMDH Am29F200A 2 Megabit 256 K X S-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC standards |
OCR Scan |
Am29F200A S-Bit/128 16-Bit) 44-pin 48-pin | |
29F800B
Abstract: 29f800bb 29F800BT 29f800ba m29f800bb M29F800BT
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OCR Scan |
Am29F800BT/Am29F800BB 8-Bit/512 16-Bit) 29F800 29F800B 29f800bb 29F800BT 29f800ba m29f800bb M29F800BT | |
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Contextual Info: AMD£I Am29LV400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications |
OCR Scan |
Am29LV400B 8-Bit/256 16-Bit) 29LV400BT80 Am29LV400BB80 | |
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Contextual Info: ADVANCE INFORMATION AMDH Am29F004B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ 5.0 Volt single power supply operation ■ Top or bottom boot block configurations available — M inimizes system-level power requirem ents |
OCR Scan |
Am29F004B 32-pin 29F004B | |
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Contextual Info: AMD£1 ADVANCE INFORM ATION Am29F004B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ 5.0 Volt single power supply operation ■ Top or bottom boot block configurations available — Minimizes system-level power requirem ents |
OCR Scan |
Am29F004B 29F004B | |
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Contextual Info: A M D J1 ADVANCE INFORMATION Am29PL160C 16 Megabit 2 M x 8-Bit/I M x 16-Bit CMOS 3.0 Volt-only High Performance Page Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device ■ — Byte (8-bit) or word (16-bit) mode selectable via BYTE# pin |
OCR Scan |
Am29PL160C 16-bit) 29PL160C | |
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Contextual Info: ADVANCE INFORMATION A M D ii Am29PL160C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only High Performance Page Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device ■ — Byte (8-bit) or word (16-bit) mode selectable via BYTE# pin |
OCR Scan |
Am29PL160C 16-bit) 29PL160C | |
Am2F010
Abstract: AM29F010 AM29F01055 am29f010-90 AM29F010-70 Am29F010 Rev A
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OCR Scan |
Am29F010 Am2F010 AM29F01055 am29f010-90 AM29F010-70 Am29F010 Rev A | |