IC 5252 F Search Results

108-5252

Contextual Info: 50 a K w — K* -y— ? TRADE MARK 5.8 CIRCUIT NO. HATING DIRECTION HOLE B MATINS DIRECTION MARK 3 m * RECOMMENDABLE DIMENSIONS OF 3Pos TAB NOTES 1 PRODUCT SPEC « 108-5252 «D.3 16.0 9rO. > IC e.o 1 2 APPLICABLE CONTACT P/N » 174777, 175411 3 THIS CONNECTOR APPLY TO 3Pos TABC5EE DETAIL

AN-904

Abstract: AN-905 DS36954 P1394 10MT 20MT X3-131-1986
Contextual Info: National Semiconductor Application Note 904 John Goldie August 1993 OVERVIEW The scope of this application note is to provide an introduction to the SCSI Parallel Interface and insight into the differential option specified by the SCSI standards. This application covers the following topics:

EZ 644

Abstract: 4PLC4
Contextual Info: THIS FT DOCUMENT. R E V IS IO N S DIS T LOG DRAWING IS A CONTROLLED LTR D E S C R IP T IO N A DWN APVD EZ SY DATE RELEASED 06SEP2001 NOTES: MATERIALS AND FINISH HOUSING PBT, UL 9 4 - V O , GREEN TERMINAL: BRASS, TIN PLATED 2. RATINGS: 12A, 300V 3. SUITABLE

SED1565

Abstract: SED1565D0B SED1566 SED1566D0B SED1567 SED1567D0B SED1568 SED1569 D1565
Contextual Info: 8. SED1565 Series Rev. 1.2 SED1565 Series Contents GENERAL DESCRIPTION . 8-1 FEATURES . 8-1

SED1565T0B

Abstract: SED1560T0B SED1566D1B CPu intel i8088 SED1560TQA zilog 3055 SED1565 LCD driver EPSON SED1565 SED156 zilog 3055 application
Contextual Info: s e ri 5 6 5 1 S D E D C L e S iv r d w r e ith M A R l a M al ic n ch Te a nu NOTICE No parts of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

Contextual Info: mm jm m Chattworth, CA M m ic n o s e m i RL201GP THRU RL207GP Prog ress P ow ered b y Technology 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • • • • 2 Amp Glass Passivated Rectifier 50 to 1000 Volts

Driver

Abstract: S1D15605D11B k 3918 regulator D1565 k 3918 TRANSISTOR S1D15606 S1D15607 5252 F 1114 S1D15605D00B S1D15606D01B
Contextual Info: S1D15605 Series Technical Manual Rev.2.4a NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

S1D15605

Abstract: S1D15605D11B k 3918 k 3918 TRANSISTOR s1d1 S1D15605D00B S1D15605T00 transistor 2222 S1D15607 d1565
Contextual Info: 8. S1D15605 Series Rev. 2.4a Contents 1. DESCRIPTION . 8-1 2. FEATURES . 8-1

c 5252 transistor

Abstract: 5252 diode
Contextual Info: SFH620A SIEMENS 5.3 kV TRIOS OPTOCOUPLER AC VOLTAGE INPUT FEATURES • High Current Transfer Ratios at 10 mA: 40-320% • • • • • • • • • • • • • • at 1 mA: 45% typical >13 Low CTR Degradation Good CTR Linearity Depending on Forward Current

Contextual Info: SIEMENS SFH620A 5.3 kV TRIOS OPTOCOUPLER AC VOLTAGE INPUT FEATURES • High Current Transfer Ratios at 10 mA: 40-32 0 % at 1 mA: 45% typical >13 • Low CTR Degradation • Good CTR Linearity Depending on Forward Current • • • • Isolation Test Voltage, 5 3 0 0 VACr MS

d431000agw

Contextual Info: 1C Test Clips 1C Test Clips Pomona8 DIP Test Clips LeadPi,ch 100 Pomona DIP Test Clips provide fast, reliable and secure connections to socketed and through-hole DIP chips. Available in two styles, DIP Test Clips give you the option of full coverage of clip con­

758a

Abstract: JANTX1N758A
Contextual Info: Zener Regulator Diodes P art N um ber ! M icrosem i i Package D ivision Outline Type M/crosegw Mil Data Pow er <W j Spec ! Sheet ID r ' Vz V) izt Z zt Zzk |mA) ( fi) ( fi) IR (uA) VR Tol. (V) ;<+/-%) 1N960A Scottsdale DO-35 STD 5352 0.4 9.1 14 7.5 700 25

2N5758

Abstract: 2N5760
Contextual Info: TYPES 2N5758, 2N5759. 2N5760 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S R EC O M M EN D ED FOR C O M P LE M E N TA R Y USE W IT H T IP 544, T IP 545, T IP 546 • 05 H C < r "o r* m

STR 6307

Abstract: str 6307 datasheet STR 6307 POWER str 1096 toshiba gto ic str 6307 data sheet str 6307 equivalent transistor D 908 STR S 6307 TOSHIBA str module
Contextual Info: ● Outline Toshiba has developed a new 2500V-1000A insulated-gate bipolar transistor IGBT product. The product offers longer lifetime and improved reliability, and features a flat compression-bonded encapsulation package, a World first. It is suitable for high-power and high-voltage applications.

TLP421

Abstract: 721F TLP421TLP421F application of ic 7445
Contextual Info: New Product Guide Photocouplers TLP421/TLP421F TLP421,TLP421F Oper Stor Sold Is Features • Collector-emitter voltage: 80 V • Current transfer ratio: 50% min Co Em Detector , • These products are Toshiba s first reflective photocouplers in DIP packages.

MG1200V1us51

Contextual Info: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with

LT 5247

Abstract: LT 5232 LT 5245 LT 5224 diode 1N diode IN5232 LT 5252 LT 5249 IN5228 IN5230
Contextual Info: Microsemi Corp. / / SANTA ANA, CA f The chote experts SCOTTSDALE, A Z For more information call: 1N5221 thru 1N5281 DO-35 602 941-6300 FEA TU R ES SILICON 500 mW ZENER DIODES • 2.4 TH RU 200 V OLTS • COM PAC T PAC KAGE • C O N S U LT FA C TO R Y FOR VOLTAG ES AB O V E 200 V

IN5228

Abstract: IN5231 zener diode in 5229 b
Contextual Info: 1N5221 thru 1N5281 DO-35 / Micro/semi Corp. $ Ihe óxxie experts SCOTTSDALE, A7. / F or more inform ation call: 602 941-6300 FEA TU RES SILICON 500 mW ZENER DIODES • 2.4 THRU 200 VOLTS • COMPACT PACKAGE • CONSULT FACTORY FOR VOLTAGES ABOVE 200 V

132-6d

Contextual Info: PRELIMINARY L H 5 3 B 1 6 P PIN CONNECTIONS FEATURES • 2,097,152 words Byte mode 1,048,576 words (Word mode) CMOS 16M (2M X 8/1M X 16) MaskProgrammable ROM With Page Mode x 8 bit organization 42-PIN DIP x 16 bit organization • Access time: 120 ns (MAX.)

Contextual Info: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with

Contextual Info: « SYNERGY Clockworks SY10EL33/L SY100EL33/L 5V/3.3V -f 4 DIVIDER SEMICONDUCTOR DESCRIPTION FEATURES 3.3V and 5V power supply options 650ps propagation delay 4.0GHz toggle frequency High bandwidth output transistions Internal 75K fì input pull-down resistors

IN5234

Abstract: 1NS232 IN5230 IN5240 M1Y diode
Contextual Info: 1N5221 / / thru Microsemi Corp. ? Tne d tcúe experts SANTA ANA, CA SCOTTSDALE, ÂZ 1N5281 DO-7 F o r m o re in fo rm a tio n call; {602 941-6300 FEATURES SILICON 500 mW ZENER DIODES • 2.4 THRU 200 VOLTS * COMPACT PACKAGE M A X IM U M R A T IN G S Operating and Storage Temperature: —65°C to +200°C

Contextual Info: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering

str 6307

Abstract: str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module
Contextual Info: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering