IC 5252 F Search Results

108-5252

Contextual Info: 50 a K w — K* -y— ? TRADE MARK 5.8 CIRCUIT NO. HATING DIRECTION HOLE B MATINS DIRECTION MARK 3 m * RECOMMENDABLE DIMENSIONS OF 3Pos TAB NOTES 1 PRODUCT SPEC « 108-5252 «D.3 16.0 9rO. > IC e.o 1 2 APPLICABLE CONTACT P/N » 174777, 175411 3 THIS CONNECTOR APPLY TO 3Pos TABC5EE DETAIL

SED1565

Abstract: SED1565D0B SED1566 SED1566D0B SED1567 SED1567D0B SED1568 SED1569 D1565
Contextual Info: 8. SED1565 Series Rev. 1.2 SED1565 Series Contents GENERAL DESCRIPTION . 8-1 FEATURES . 8-1

SED1565T0B

Abstract: SED1560T0B SED1566D1B CPu intel i8088 SED1560TQA zilog 3055 SED1565 LCD driver EPSON SED1565 SED156 zilog 3055 application
Contextual Info: s e ri 5 6 5 1 S D E D C L e S iv r d w r e ith M A R l a M al ic n ch Te a nu NOTICE No parts of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

2N5758

Abstract: 2N5760
Contextual Info: TYPES 2N5758, 2N5759. 2N5760 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S R EC O M M EN D ED FOR C O M P LE M E N TA R Y USE W IT H T IP 544, T IP 545, T IP 546 • 05 H C < r "o r* m

STR 6307

Abstract: str 6307 datasheet STR 6307 POWER str 1096 toshiba gto ic str 6307 data sheet str 6307 equivalent transistor D 908 STR S 6307 TOSHIBA str module
Contextual Info: ● Outline Toshiba has developed a new 2500V-1000A insulated-gate bipolar transistor IGBT product. The product offers longer lifetime and improved reliability, and features a flat compression-bonded encapsulation package, a World first. It is suitable for high-power and high-voltage applications.

Contextual Info: 4 3 2 REVISIONS D DATE APPRO VED REV. DESCRIPTION A1 ECN 2 0 0 3 8 0 0 5 /0 2 /0 3 M .R.C A2 ECN 2 0 1 6 6 9 0 5 /0 3 /0 7 R.A.S. D NOTES: M ATER IA LS A N D PLATIN G : PBT U L 9 4 V - 0 , BLACK INSULATOR MATERIAL INNER T H R E A D / V OUTER THREAD CONTACT MATERIAL

IN5228

Abstract: IN5231 zener diode in 5229 b
Contextual Info: 1N5221 thru 1N5281 DO-35 / Micro/semi Corp. $ Ihe óxxie experts SCOTTSDALE, A7. / F or more inform ation call: 602 941-6300 FEA TU RES SILICON 500 mW ZENER DIODES • 2.4 THRU 200 VOLTS • COMPACT PACKAGE • CONSULT FACTORY FOR VOLTAGES ABOVE 200 V

Contextual Info: « SYNERGY Clockworks SY10EL33/L SY100EL33/L 5V/3.3V -f 4 DIVIDER SEMICONDUCTOR DESCRIPTION FEATURES 3.3V and 5V power supply options 650ps propagation delay 4.0GHz toggle frequency High bandwidth output transistions Internal 75K fì input pull-down resistors

str 6307

Abstract: str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module
Contextual Info: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering

7216 d

Abstract: digital piano IC 7602 prom datasheet 5252 F ic
Contextual Info: New Product Guide Digital Temperature Compensation IC TC7MTX01FK Product Overview: External View In recent years, due to the demand for compactness and lower power dissipation, circuits for mobile devices are being manufactured as individual chips. In particular, during the manufacture of modular

SK 3050 R

Abstract: sk a 3050 c
Contextual Info: * SYN ER G Y R E G I S T E R E D HEX S^OI-ibSi? PECL-TO-TTL SY1D0HB07 S E M IC O N D U C T O R DESCRIPTION FEATURES Differential PECL data and clock inputs 48mA sink, 15mA source TTL outputs I Single +5V power supply 1Multiple power and ground pins to minimize noise

5241a

Abstract: IN5233 1NS226 N5231 IN5227 IN5228 IN5236 IN5242 N5239A n5232a
Contextual Info: TYPES 1N5226 THRU 1N5257, 1N5226A THRU 1N5257A, 1N5226B THRU 1N5257B SILICON VOLTAGE-REGULATOR DIODES B U L L E T I N N O . D L -S 7 3 1 1 9 4 4 , M A R C H 1 97 3 V z . . . 3.3 V to 33 V PD •■■500 mW • Available with 5%, 10% and 20% Tolerances •

IN5363

Abstract: IN5338 in5364 IN5342 in5347 IN5358 IN5339 in5337 IN5349 in5353
Contextual Info: Zener Voltage Zener Type No. i t I zt Volts 1N 5248 l,? 1N 5249 •») 1N 5250 ('») 1N5251 1N 5252 1N 5253 1N 5254 1N 5255 1N 5256 (|?) 1” » 1” ) M’) M t” ) 1N 5257 in) 1N 5258 I''>] 1N 5259 1191 1N 5260 1N 5261 1N 5262 1N 5263 IN 5 2 6 4 1N 5265

in5347

Abstract: in5338 1N5844 IN5354 IN5363 Diode IN5339 in5342 IN5364 IN5339 1N5882
Contextual Info: Zener Voltage Zener Type No. i t I zt Volts @ mA Max. Zener Impedance @ Izr Ohms 1N 5248 l,? 1N 5249 •») 1N 5 2 5 0 ('») 18.0 19.0 20.0 7.0 6.6 6.2 21.0 23.0 25.0 1N5251 (|?) 1N 5252 1” » 1N 5253 1” ) 22.0 24.0 25.0 5.6 5.2 5.0 29.0 33.0 35.0 1N 5 2 5 4 M’ )

str 6307

Abstract: str 6307 datasheet STR 6307 POWER ic str 6307 D-71229 STR S 6307
Contextual Info: Low Power CMOS ASIC 0.3µm 3V/2V TC222C Series Cell-Based IC PRODUCT GUIDE Overview features help to substantially reduce your chip’s power while maximizing the critical path speed. Power Comparison e.g., 100k gates, 70k-bit SRAM, 20MHz Core : 3V Core : 2V, I/Os : Single 3V

pmi OP77

Abstract: pmi OPERATIONAL AMPLIFIERS op77
Contextual Info: OP-77/883 NEXT GENERATION OP-07 ULTRA-LOW OFFSET VOLTAGE OPERATIONAL AMPLIFIER P r e c i s i o n M o n o l i t h i c s Inc. 1.0 SCOPE This specification covers the detail requirements for an ultra-low-offset voltage operational amplifier. It is highly recommended that this data sheet be used as a baseline for new military or

5252 F 4-pin

Abstract: LX 5252 F ic 5252 F led 5252 led
Contextual Info: New Product Guide Photo-IC for Illuminance Sensor linear output type TPS818 PRODUCT GUIDE Overview Maximum Ratings The TPS818 is a photo-IC of linear output (current output type) which integrates a photodiode and a current amp circuit onto a single chip. A luminous efficiency correction filter mounted on the detector

risc

Abstract: RISC architecture 16 bit risc processor TX49 toshiba asics toshiba R4000 microprocessor MIPS R3000A 404 MIPS
Contextual Info: 64-Bit TX System RISC TX System RISC TX System RISC TX System RISC TX System RISC 64-Bit TX System RISC TX49 Family Toshiba,s TX49 Family is a family of 64-bit RISC processors built around the original TX49 microprocessor core developed by Toshiba. The TX49 core is based

IN5338

Abstract: IN5363 Diode IN5339 in5342 in5347 IN5339 IN5357 in5364 Diode IN5343 Diode IN5346
Contextual Info: Zener Voltage Zener Type No. i t I zt Volts 1N 5248 l,? 1N 5249 •») 1N 5 2 5 0 ('») 1N5251 (|?) 1N 5252 1” » 1N 5253 1” ) 1N 5 2 5 4 M’ ) 1N 5 2 5 5 M 1N 5 2 5 6 t” ) 1N 5257 in) 1N 5 2 5 8 I''>] 1N 5259 1191 1N 5260 HO 1N 5261 (u) 1N 5262 I«9)

p6020

Abstract: TIP664 TIP-663 TIP663 TIP-665
Contextual Info: TEXAS IN STR ~b2 -COPTO 8 9 6 1 7 2 6 TEXAS INS TR D l F | fl'iblTHL: □ □ 3 b cl ci0 1 <OPTO 62C 3 6 9 9 0 TIP663, TIP664, TIP665 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 198 4 • 150 W at 100 ° C C ase Temperature T-33-29

12vdc motor

Abstract: ICH8515 RF NPN POWER TRANSISTOR 1000 WATT ICH8515IKA ICH8515MKA wakefield compound RSC 103 diagram 30v dc motor
Contextual Info: DINnü^UlL ICH8515 Power Am plifier Motor & Actuator Driver KEY FEATURES: DESCRIPTION: • Delivers up to 1.5 amps @ +12VDC ±15VDC supplies • Protected against inductive kick back by internal power limiting • Programmable current limiting (short circuit

AN-90

Abstract: CD4512BC CD4512BM MC14512
Contextual Info: CD4512BM/CD4512BC 8-Channel Buffered Data Selector General Description Features The CD4512BM/CD4512BC buffered 8-channel da ta selec­ to r is a com plem entary MOS CMOS c irc u it constructed w ith N- and P-channel en hancem ent m ode tra n s is to rs .

S-AV17

Abstract: 2SC2879 2SK3075 s-av6 quality FM TRANSMITTER 2SK1310 TOSHIBA RF Power Module S-AV17 S-AU80 2SK2854 2SK3079
Contextual Info: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors

D431000

Abstract: INTEL 87C196 USER MANUAL D75304GF AIC6360Q d431000agw aic-6360 INTEL PLCC 68 dimensions AIC-6360Q d431000ag NEC uPD71054
Contextual Info: IC Test Clips Test Clip Selection Made Easy To select the Pomona IC Test Clip specifically designed for your chip, find the table for your chip type and follow the selection procedure outlined in this section. SSOP/QSOP JEDEC QFP Pomona IC Test Clips are uniquely designed to provide