IC 400MA, NPN TRANSISTOR Search Results

Contextual Info: DTC943TUB NPN 400mA 20V Digital Transistors Bias Resistor Built-in Transistors For Muting. Datasheet lOutline Parameter Value VCEO VEBO IC R1 20V 40V 400mA 4.7kW UMT3F Collector Base Emitter DTC943TUB (SC-85) lFeatures 1) Built-In Biasing Resistors 2) High Breakdown Voltage of Emitter to Base

Contextual Info: DTC914TUB NPN 400mA 20V Digital Transistors Bias Resistor Built-in Transistors For Muting. Datasheet lOutline Parameter Value VCEO VEBO IC R1 20V 40V 400mA 10kW UMT3F Collector Base Emitter DTC914TUB (SC-85) lFeatures 1) Built-In Biasing Resistors 2) High Breakdown Voltage of Emitter to Base

Contextual Info: UMH32N NPN 400mA 20V Complex Digital Transistors Bias Resistor Built-in Transistors For Muting. Datasheet lOutline Parameter Tr1 and Tr2 VCEO VEBO IC R1 20V 40V 400mA 4.7kW UMT6 (6) (1) (2) (5) (4) (3) UMH32N SOT-353 (SC-88) lFeatures 1) Built-In Biasing Resistors

Contextual Info: DTC923TUB NPN 400mA 20V Digital Transistors Bias Resistor Built-in Transistors For Muting. Datasheet lOutline Parameter Value VCEO VEBO IC R1 20V 40V 400mA 2.2kW UMT3F Collector Base Emitter DTC923TUB (SC-85) lFeatures 1) Built-In Biasing Resistors 2) High Breakdown Voltage of Emitter to Base

Contextual Info: UMH33N NPN 400mA 20V Complex Digital Transistors Bias Resistor Built-in Transistors For Muting. Datasheet lOutline Parameter Tr1 and Tr2 VCEO VEBO IC R1 20V 40V 400mA 2.2kW UMT6 (6) (1) (2) (5) (4) (3) UMH33N SOT-353 (SC-88) lFeatures 1) Built-In Biasing Resistors

HN4C05JU

Contextual Info: HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C05JU Unit: mm Low Frequency Amplifier Applications Muting Applications Switching Applications Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) High Collector Current :IC=400mA(Max.)

Contextual Info: HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C05FE Unit: mm Low Frequency Amplifer Applications Muting Application Switching Application Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA High Collector Current :IC=400mA(Max.)

Contextual Info: HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C05JU Unit: mm Low Frequency Amplifer Applications Muting Application Switching Application Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) High Collector Current :IC=400mA(Max.)

hn1c05FE

Contextual Info: HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C05FE Unit: mm Low Frequency Amplifier Applications Muting Application Switching Application Low Saturation Voltage: VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA High Collector Current :IC=400mA(Max.)

HN4C05JU

Contextual Info: HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C05JU Low Frequency Amplifier Applications Muting Applications Switching Applications z Unit: mm Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) z High Collector Current :IC=400mA(Max.)

Contextual Info: P * FORWARD INTERNATIONAL ELECTRONICS LTD. KTC3202 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION FEATURES * Excellent Hfe Linearity :Hfe 2 =25(Min) at Vce=6V, Ic=400mA. ♦Complementary toKTA1270

hn1c05FE

Contextual Info: HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C05FE Unit: mm Low Frequency Amplifier Applications Muting Application Switching Application z Low Saturation Voltage: VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA z High Collector Current :IC=400mA(Max.)

Contextual Info: HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C05JU Low Frequency Amplifier Applications Muting Applications Switching Applications Unit: mm z Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) z High Collector Current : IC = 400mA(Max.)

Contextual Info: HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C05FE Unit: mm Low Frequency Amplifier Applications Muting Application Switching Application z Low Saturation Voltage: VCE(sat)(1) = 15mV (typ.) :@ IC = 10mA/ IB = 0.5mA z High Collector Current : IC = 400mA (max)

Contextual Info: HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C05FE Unit: mm Low Frequency Amplifier Applications Muting Application Switching Application z Low Saturation Voltage: VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA z High Collector Current :IC=400mA(Max.)

SOT-89

Abstract: TSB1664CY TSD1664 sot89 "NPN TRANSISTOR"
Contextual Info: TSD1664 Low Frequency NPN Transistor BVCEO = 20V Ic = 800mA VCE SAT , = 0.15V(typ.) @Ic / Ib = 400mA / 20mA Pin assignment: 1. Base 2. Collector 3. Emitter Features — Ordering Information Low VCE (SAT). Part No. — Excellent DC current gain characteristics

Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxial Transistor HN1C07F Unit: mm Features Excellent Current Gain hFE linearity :hFE=25(min) at VCE=6V,IC=400mA 1 pin mark Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50

KTC1020

Abstract: KTA1021
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC1020 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellecnt Iife Linearity : hFE 2 =25Min. : V Ce =6V, Ic=400mA. • 1 Watt Amplifier Application. • Complementary to KTA1021.

KTA1270

Abstract: KTC3202
Contextual Info: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC3202 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Ii f e linearity : hFE 2 =25Min. : VCE=6V, Ic=400mA. • Complementary to KTA1270.

KTA1505

Abstract: KTC3876
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3876 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • Excellent Linearity : hFE 2 =25(Min.) a t V ce =6V, Ic=400mA. • Complementary to KTA1505. DIM

KTA1021

Abstract: KTC1020
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC1020 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellecnt Ii f e Linearity : hFE 2 =25Min. : V Ce =6V, Ic=400mA. • 1 Watt Amplifier Application.

KTA2015

Abstract: KTC4076
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC4076 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • Excellent Linearity : hFE 2 =25(Min.) a t V ce =6V, Ic=400mA. • Complementary to KTA2015.

KTA1021

Abstract: KTC1020
Contextual Info: SEMICONDUCTOR KTC1020 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES A ᴌExcellecnt hFE Linearity O F : hFE 2 =25Min. : VCE=6V, IC=400mA. ᴌ1 Watt Amplifier Application. H M G ᴌComplementary to KTA1021.

transistor Marking code n03

Abstract: ic n03 DN100S DP100S marking N03 marking code N03
Contextual Info: DN100S Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.15V Typ. @IC /IB =400mA/20mA) • Suitable for low voltage large current drivers • Complementary pair with DP100S • Switching Application