IC 1032 EQUIVALENT Search Results

d07-15

Contextual Info: BUCHANAN M E T R IC NEMA Terminal Blocks Catalog 1307612 Revised 7-01 700 Series, 600V M edium Duty, 0.375" Pitch jg fc A IT -A r ^ CHARACTERISTICS •HSieWr IS? 7 Direct M ount Flat Base Painted, Nylon Unpainted, Nylon Polypropylene : Channel Mount (Dovetail Base)

p627

Contextual Info: M E T R IC NEMA Terminal Blocks BUCHANAN DlTiP i m .’l! Catalog 1307612 Revised 7-01 :h e s 600 Series, 300V Medium Duty, 0.375" Pitch •4W U. & w 1 5 V s# fe II STRAP CLAMP TUBULAR SCREW Model Model Model Model 621 628 618-BU P628 624 625 615-BU P625

Contextual Info: BUCHANAN M E T R IC NEMA Terminal Blocks Dimension; am millimeters ever inches Catalog 1307612 Revised 7-01 500 S eries, 300 V Phenolic, 0.44" Pitch, High T em p e ra tu re CHARACTERISTICS STRAP SCREW T yp e of B lock TUBULAR SCREW M odel Model D ir e c t M o u n t F la t B a s e

Contextual Info: BUCHANAN Catalog 1308389 Terminal Blocks Revised 3-01 T E C H N IC A L S U M M A R Y CAT. NO. 105-BU 115 TERMINAL BLOCK OR PRODUCT LINE CONTACT TYPE MATERIAL PLATE SCREW STYLE High Density Tubular Clamp Electroplated Tubular Copper Contact 6-32 Slotted Head

BT 156 transistor

Abstract: TRANSISTOR BJ 122 RCA-40637 sf 122 transistor Arnold Magnetics transistor sf 127 RCA-40637A i53b 5659065 rca transistor
Contextual Info: File No. 655 . □uobz/d RF Pow er Tran sisto rs Solid State Divi8ion 40637A Silicon N-P-N Epitaxial Planar Transistor For Frequency-Multiplier Service in Mobile, Marine, and Sonobuoy V H F Transmitters Features: • High transistor dissipation rating P j = 2 W max.

2N5070

Abstract: RCA-2N5070 2N5070 equivalent rca 2N5070 IB77 Single-Sideband overlay transistor 1156N VK200 rca transistor
Contextual Info: File No. 268 RF P o w er T ransisto rs Solid State Division 2N5070 Silicon N -P -N Overlay Transistor For High-Frequency Single-Sideband Communications Equipment Features: • Suitable lo r class A or class B amplifiers ■ 25 W PEP ou tput min. at 30 MHz w ith

M3823AGFFP

Abstract: M3823AGFFP-80P VT-200
Contextual Info: 3823 15-Jun-06 Evaluation of Subsystem Clock Oscillation Circuit [M3823AGFFP-80P] PQFP 14x20 0.80mm pitch Measurement conditions :3.3V, 5.0V Model Vcc=1.8V to 5.5V :VT-200 IC Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance

Contextual Info: J B L W H Metrimate Pin and Socket Connectors M E T R IC Catalog 1307612 Dimensions are millimeters over inches. Revised 7-01 Commoning Connectors Product Facts • 36-circuit commoning system ■ Choice of bussing configurations: full bus and split bus of 8-8-8-8-4. Other

PAS 1066

Contextual Info: THOMSON 0 0 Ü 2 C I5 L T O T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS 59C 02056 _ 0" _ ' - û ^ _ / 7 1 l \ l 3 B 7 ^ K l O O O G 9 , C O R 1 f % ^ 1 1 X 1 3 8 8 3 , ^ 1 SUPERSW ITCH FAST RECOVERY RECTIFIERS DIODES D E RED R ESSEM EN T RAPID ES

1N2153

Abstract: 99016-1N2153 30CW 99016 1N215
Contextual Info: Military Silicon Power Rectifier 99016 KN- 'ir 1N2153 Dim. Inches Minimum ACROSS FLATS Notes: 1. Full threads within 2 1 /2 threads. 2. Standard Polarity A B C D F G H J K L M N R S -.400 - M illim eter Maximum Minimum .424 -.035 .150 .150 1.00

Contextual Info: 1EE D Jfl3bbDll ODGEOfll fi | T-3^-0^ 2N5659 10 AMP HIGH SPEED NPN TRANSISTOR 120 VOLTS CASE STYLE Z JEDECTO—111 ALL TERMINALS ISOLATED FROM CASE *• » . •«.4*00 -7 CJ ,570 ^ .a». • .4bt» - J20 .436 .42! t.« S \ C O LLE C T O R r*.215 •.135

Contextual Info: G SÌC D 1• 7=1^23? 00G2271 4 S-TH O M SO N Q BYX 61-50, R BYX 61-400, (R) T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPEBSWITCH FA ST R EC O V ERY R E C T IF IE R DIODES D IO D E S D E R E D R E S S E M E N T R A P ID E S 59C 02271 d T - o S V / '

Contextual Info: ^ CY7C1031 CY7C1032 PRELIMINARY 5"s s CYPRESS *^ SEMICONDUCTOR Features ~ • Direct interface with the processor and external cache controller • Supports 66-MHz Pentium micro­ processor cache systems with zero wait states • 1/Os capable o f 3.3V operation

Contextual Info: SÌC D I 7 ^ 2 3 7 -THOMSON _ 59C 02065 O THOMSON-CSF DGDEGbS 1 _ D*T' e 3 ' / 7 ~ 1 N 3 8 8 9 ^ 1 N 3 8 9 3 , R B Y X 6 2 6 0 0 (R) DIVISION SEMICONDUCTEURS DISCRETS , SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES FAST RECOVERY

Contextual Info: CY74FCT399T QUAD 2-INPUT REGISTER SCCS024A – MARCH 1994 – REVISED OCTOBER 2001 D D D D D D D D Function, Pinout, and Drive Compatible With FCT and F Logic Reduced VOH Typically = 3.3 V Versions of Equivalent FCT Functions Edge-Rate Control Circuitry for

L103B

Abstract: LA6393M 1103B LA6393
Contextual Info: Ordering num ber: EN 1 1 0 3 B I SAXYO Monolithic Linear IC LA6393M N o .n 03B i High-Performance Dual Comparator The LA6393M is a high-performance dual comparator that is capable o f operating from a single power supply over a wide range of 2V to 36V. Because of its excellent input characteristics and low power, it can be very conveniently

Contextual Info: BUCHANAN Catalog 1308389 Terminal Blocks Revised 3-01 B100, #B 100 S E R IE S , O N E -P IE C E B L O C K S — P H E N O LIC Physical P roperties Housing: Housing Material: Phenolic, filled F lammability: UL94V-1 Color: Black flam e retardant C o n tacts:

DIODE 1N1206

Abstract: BROWN BOVERI n1204a N4508 1n4508 D-6840 S2110 S2120 1N1202 N1200
Contextual Info: -FMC BBC BROWN BOVERI BR O WN , BOVERI & CIE AKTIENGESELLSCHAFT MANNHEIM Silicon Avalanche Power Rectifiers Geschäftsbereich Halbleiter und Strom richter Telefon 06206 503-1, Telex 04-65727 Postfach 200, D-6840 Lampertheim Series 21 22 Amperes Average Brochure Order No.

M38235G6FP

Abstract: VT-200
Contextual Info: 3823 07-Sep-06 Evaluation of Subsystem Clock Oscillation Circuit [M38235G6FP-80P] PQFP 14x20 0.80mm pitch Measurement conditions :3.3V, 5.0V Model Vcc=1.8V to 5.5V :VT-200 IC Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance

IR 2353

Abstract: VISION TECH led display ic T M 2313 HCMS2013 hdsp-201x 2312t hcms-2011
Contextual Info: Whpì \i!rA CMOS Hermetic Extended Temperature Range 5x7 Alphanumeric Displays Technical Data Features • O n-Board Low Pow er CMOS IC Integrated Shift Register with Constant Current LED Drivers • Wide O perating T em perature Range -55°C to +100°C • HI-REL Screening p er

B316J

Abstract: 2N6188 EB-500 1N5802 2N5006 2N5007 2N5009 2N5659 2N6189 TWX910-583-4807
Contextual Info: SOLI» STATE DEVICES INC 1EE D Jfl3bbDll ODGEOfll fi | T 2N5659 10 AMP HIGH SPEED NPN TRANSISTOR 120 VOLTS CASE STYLE Z JEDECTO—111 ALL TERMINALS ISOLATED FROM CASE *•» . •«.400 * -7C J ,570 ^ .436 .42! .4üB J20 .a» . 000 ,090 t.« S \ *.215 •.135

HDSP-2010TXVB

Abstract: Hdsp-2010txv
Contextual Info: HEWLETT-PACKARD-. CNPNTS SOE ‘4 4 4 7 5 Û 4 OOObt.21 FOUR CHARACTER RED ALPHANUMERIC DISPLAY FOR EXTENDED TEMPERATURE APPLICATIONS HEW LETT PACKARD m D 1 HDSP-2010 HDSP-2010TXV HDSP-2010TXVB T-41-37 Features OPERATION GUARANTEED TO TA = -40° C LEAK RATE GUARANTEED

Contextual Info: HEWLETT-PACKARD/ blE C MP N T S HEW LETT PACKARD D • MMM75A4 QQQfl71fi FOUR CHARACTER 3.8mm 0.15 inch HERMETIC, SMART ALPHANUMERIC DISPLAY b07 HMDL-2416 HMDL-2416TXV HMDL-2416TXVB - Features • WIDE OPERATING TEMPERATURE RANGE

Contextual Info: •TOI TOX 9007 P-N Gallium Arsenide Infrared-Emitting Diode Texas O p t o e / e c t r o n ic s , Inc. DESCRIPTION FEATURES The T O X 9007 is a 940 nm em itter designed for short distance point to point data transm ission and position sensing. D esigned to em it near-infrared radiation