I840G Search Results

IRFI840G

Abstract: EK24
Contextual Info: IRLI530NPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432 AS S E MB L E D ON WW 24 1999 IN T H E AS S E MB L Y L IN E "K "

IRFI840G

Contextual Info: PD- 95427A IRLI3705NPbF • Lead-Free 1 IRLI3705NPbF 2 IRLI3705NPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432

Contextual Info: PD- 95976 IRFI9Z24GPbF • Lead-Free 1 IRFI9Z24GPbF 2 IRFI9Z24GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432

Contextual Info: PD- 95648 IRFIBE20GPbF • Lead-Free 1 IRFIBE20GPbF 2 IRFIBE20GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432

Contextual Info: PD- 95975 IRFI9Z14GPbF • Lead-Free 1 IRFI9Z14GPbF 2 IRFI9Z14GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432

IRFz44n equivalent

Abstract: IRFIZ44N IRFZ44N IRFIZ44N equivalent irf 630
Contextual Info: PD - 9.1403A IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD- 95655 IRLIZ14GPbF • Lead-Free Document Number: 91315 7/26/04 www.vishay.com 1 IRLIZ14GPbF Document Number: 91315 www.vishay.com 2 IRLIZ14GPbF Document Number: 91315 www.vishay.com 3 IRLIZ14GPbF Document Number: 91315 www.vishay.com 4 IRLIZ14GPbF Document Number: 91315

Contextual Info: PD- 95654 IRLI640GPbF • Lead-Free Document Number: 91314 7/26/04 www.vishay.com 1 IRLI640GPbF Document Number: 91314 www.vishay.com 2 IRLI640GPbF Document Number: 91314 www.vishay.com 3 IRLI640GPbF Document Number: 91314 www.vishay.com 4 IRLI640GPbF Document Number: 91314

MOSFET IRFB 630

Abstract: IRFB 630 93804B MOSFET IRFB 630 Datasheet transistor IRF 630 AN1001 IRF1010 IRFB41N15D IRFIB41N15D IRFS41N15D
Contextual Info: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

IRF 042

Abstract: irf 540 mosfet IRL3803 IRLI3803
Contextual Info: PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D

IRLIB4343PbF

Contextual Info: PD - 95755 DIGITAL AUDIO MOSFET IRLIB4343PbF Features l l l l l l l l Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDSON for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI

IRF1310N

Abstract: IRF1310n equivalent 4.5V to 100V input regulator
Contextual Info: PD - 94873 IRFI1310NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.036Ω G Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD- 95652 IRLI2910PbF • Lead-Free www.irf.com 1 7/26/04 IRLI2910PbF 2 www.irf.com IRLI2910PbF www.irf.com 3 IRLI2910PbF 4 www.irf.com IRLI2910PbF www.irf.com 5 IRLI2910PbF 6 www.irf.com IRLI2910PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

IRL530N

Contextual Info: PD - 95635 IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V

1530A

Abstract: f1010e IRF 10A 55V irf 9246 I840G IRF9Z34N IRFI9Z34N IRF MOSFET 10A P irf power mosfet Equivalent IRF 44
Contextual Info: PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.10Ω G ID = -14A

IRF3205 equivalent

Abstract: irf3205 mosfet transistor irf3205 DRIVER IRF3205 TO-220 EK 110 IRF3205 IRF3205 E DATASHEET IRF3205 IR Equivalent IRF 44 DSA0030791
Contextual Info: PD - 9.1374B IRFI3205 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.008Ω

Contextual Info: PD- 95655 IRLIZ14GPbF • Lead-Free Document Number: 91315 7/26/04 www.vishay.com 1 IRLIZ14GPbF Document Number: 91315 www.vishay.com 2 IRLIZ14GPbF Document Number: 91315 www.vishay.com 3 IRLIZ14GPbF Document Number: 91315 www.vishay.com 4 IRLIZ14GPbF Document Number: 91315

IRL520N

Abstract: IRLI520N mosfet 60v 60a
Contextual Info: PD - 9.1496 IRLI520N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V

f1010e

Abstract: IRFI1010N equivalent IRF1010N IRFI1010N IRF 260 N irf 460 IRF 409
Contextual Info: PD - 9.1373A IRFI1010N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω G ID = 49A S Description Fifth Generation HEXFETs from International Rectifier

IRF1010N

Abstract: international rectifier code
Contextual Info: PD - 95418 IRFI1010NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.012Ω G ID = 49A S Description

IRL520N

Abstract: IRLI520N irf 540 mosfet IRF 260 N diode a37
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1496 IRLI520N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated

IRFI1310N

Abstract: IRF1310N 4.5V TO 100V INPUT REGULATOR
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1373 IRFI1310N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D

Equivalent IRF 44

Abstract: ultra low igss pA IRL2505 IRLI2505
Contextual Info: PD - 9.1327A IRLI2505 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D

irf 930

Abstract: IRF4905 equivalent SEC IRF 640 R 133 A IRF4905 IRFI4905 equivalent of irf4905 IRF 260 N
Contextual Info: PD - 9.1526A IRFI4905 HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.02Ω G ID = -41A