I50A Search Results

Contextual Info: TOSHIBA MG150J1BS11 TOSHIBA GTR MODULE m •v ■ SILICON N CHANNEL IGBT r; 1 ^ n 1 1 'w ■ v v ■ r nar <; 1 1 v ■ ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=1.0^s Max. (Iç = i50A) Low Saturation Voltage ; V q e (sat) = 2,7V (Max,) (Iq = 150A)

Contextual Info: 3C/I50A R.F. Triode 3C/I50A CATH O D E. Thoriated tungsten filament Voltage Nominal current Peak emission 10 3.4 2.5 V A A Amplification factor\Measured at Va l k V \ 18 Impedance / I a i 50 mA f 3,800 Q R A T IN G . D IR E C T IN T E R - E L E C T R O D E C A P A C IT IE S .

SC150C-60

Abstract: b257 ht103m SC150C-80-120 SC150C SC150C-100 SC150C-40 SC150C-80 D0024m thyristor 1200V
Contextual Info: THYRISTOR SC150C_ For general phase control applications such as speed controls, light controls and welders etc. • • • • General power use lT= I50A , It rms = 2 3 0 A High voltage up to 1200V High surge current of 3000A • Stud type •Maximum Ratings

Mullard 425

Abstract: CV115 Mullard
Contextual Info: U .H .F. P O W ER T E T R O D E QVI-I50A Forced air-cooled power tetrode rated for a maximum anode dissipation o f 1S0W and suitable for use at frequencies up to 500 Mc/s. P R E L IM IN A R Y DATA This data should be read in conjunction w ith “ O perating Notes,

lt 431

Abstract: fn 431 H A 431
Contextual Info: 5A/I50A Carrier Pentode « io a > 43I0A CATH O D E. Indirectly heated oxide-coated Voltage Nom inal current 10 0.32 V A 2.0 m A/V R A TIN G . Mutual conductance f J Screen grid/j, ] I Measured at V a = V g » = 135 Vgs 0 V gl- 3 I f j 19 IN T E R -E L E C T R O D E C A P A C ITIES .

50J2Y

Abstract: 50J2YS50
Contextual Info: T O SH IB A MG150J2YS50 MG1 50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2 - f S S A ± 0 .3 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

Contextual Info: MG150J2YS50 T O SH IB A MG1 50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2 - 12 5.4 * 0.3 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

Cutler-Hammer

Abstract: NH3 GL-GG TYCO 596A RECTIFIER LS CIRCUIT BREAKERS KS-20472 THHN 6 str green kic 125 hot air gun fan controller circuit G488 N 847568920
Contextual Info: CB Architecture TS 208/240V TS 480V Battery Panels @ AC/Rect: 1 TABLE t SYSTEM ARCHITECTURE TABLE 3: AC INPUT AND RECTIFIER SHELF OPTIONS IN A 6 OR 7 FOOT HIGH CABINET OOOSE OM.Y 0 £ choose only one H569-434 AC INPUT AND RECTIFIER SHELF OPTIONS 7 IN A 7 FOOT HIGH CABINET

Contextual Info: 7 ^ 1 g M 3 00051*13 57T TRANSISTOR MODULE OCA15QA/QBB150A40/60 UL;E76102 M QCA150A and QBB150A is a dual Darlin­ gton power transistor module with two high speed, high power Darlington transis­ tors. Each transistor has a reverse paral­ leled fast recovery diode.

Contextual Info: TRANSISTOR MODULE Q C A 150A A 120 U L;E 76102 M QCA1 5 0 A A 1 2 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated

Contextual Info: 4 97F8095 RBC PROPRIETARY AND CONFIDENTIAL I 12 : 14:08 3. 6 6 ± . 06 DATE : 0 5 - D e c - 05 I I INFORMATION M o d i f i e d per E C N NO. 0627. I . 9 7 ± . 06 25 0 0 . 8 13 ± . 0 3 0 0.81 3± .03 0 .09 0 SCALE »0 . 7 5 ± . 0 3 1.250 BLADE DETAILS SCALE

50L-060

Contextual Info: FUJI 6-Pack IGBT 600 V 50 A 6MBI 50L-060 M U M Ë ïïr a iÊ IGBT MODULE ( L series Outline Drawings 4 -0 5 .4 • Features • High Speed Sw itching • Low Saturation Voltage • Voltage Drive ■ Applications • Inverter for M otor Drive • AC and DC Servo Drive A m p lifie r

150AVP

Abstract: 150 AVP philips 150 AVP 50AVP philips 50 AVP 150 AVP philips dynode 11-STUFIGER 50AVP 1470 LM philips 50AVP
Contextual Info: PHILIPS PHOTOMULTIPLIER for scintillation counters and other purposes PHOTOMULTIPLICATEUR pour compteurs de scintillations et pour autres applications PHOTO-ELEKTRONENVERVIELFACHER für Scintillations-Zähler und andere Zwecke incident radiation radiation incident0

Contextual Info: MG150J1ZS50 U nit in mm HIGH P O W E R SW ITC H IN G APPLICA TIO N S. M O T O R C O N T R O L A PPLICA TIO N S. 2-FAST-ON-TAB »110 • • The Electrodes are Isolated from Case. High Input Impedance • Enhancement-M ode High Speed : tf= 0.30/iS Max. (Iç = 150A)

Contextual Info: T R A N S IS T O R M O D U LE QCA150AA100 UL;E76102 M Q C A 1 5 0 A A 1 0 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. Th e mounting base o f the module is electrically isolated

MTL 188

Abstract: mtl ANALOG OUTPUT BARRIER rtd 392 platinum 2B59A 28serie 4-20 mA 1997 sensor Model 2B24A mtl BARRIER 188
Contextual Info: ANALOGDEVICESfAX-ON-DEMAND HOTLINE ~ -. - Page B ANALOG DEVICES LowCost Two-WireTransmitters 28 Series FEATURES Low Cost Compatible with Standard 4-20 mA Loops Broad Family Direct Sensor Interface to Thermocouples, RTDs and AD590s Loop-Powered Isolator High Performance

Contextual Info: TRANSISTOR MODULES- Q C A 150B A 60 U L;E 76102 M ) QCA1 5 0 B A 6 0 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral­ leled fast recovery diode ( t r r : 200ns). The mounting base of the

Contextual Info: 2 D 1 1 0 0 M A - 0 5 0 0 50A '< s ± « -,7- t ^ - * Outline Drawings 7 — POWER TR A NSISTO R M ODULE • Features • hF E *''ÎÜ ^' H igh DC C u rre n t Gain • H ig h speed s w itc h in g • 7 'J — K p*3ïBS • ÎÊÜtJfé In c lu d in g Free W h e e lin g D iode

Contextual Info: NIHON DEMPA K OGY O CO LTD 35E ^14^32 D DDDDDL2 I NDKC 3 CRYSTAL OSCILLATORS " T -Ö O ' O ^ OVEN CONTROLLED CRYSTAL OSCILLATORS OCXO 19100 Series Main applications: Communications equipment, Measuring instruments etc. Features: 1. Excellent aging characteristics

Contextual Info: TOSHIBA TC55V1001 AF/AFT/ATR/AST/ASR-85,-10.-85L.-1 OL T O SH IB A M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE C M O S 131,072-WORD BY 8-BIT STATIC R A M DESCRIPTION The TC55V1001AF/AFT/ATR/AST/ASR is a 1,048,576-bit static random access memory SRAM organized as

1d1400a-120

Abstract: 2DI200D-100 IC A 3120 M105 1DI400D-100 1DI300D-100 2DI100D-100 2DI150D-100 2DI50D-100 2DI75D-100
Contextual Info: 1000 v o lts class p o w e r tran sisto r m odules ♦ T e rm in a ls lay o u t in w hich d rive w irin g and p o w er w irin g do not co m e accross. * S u ited fo r m o to r control ap p licatio n s w ith 380 to 440V volts inputs. D e v ic e ty p e P ackag e

6D120C-050

Abstract: 3 phase inverter circuits M601 6DI30A-050 6DI50A-055 6D120 6DI15A-050 IC M605 6DI50B-050 EVF31T-050A
Contextual Info: Transistor Modules C OLL MER S E M I C O N D U C T O R INC m 2 5 3 6 7 ^ 2 O G O l b l M T14 « C O L MAE D 6-pack p o w e r tran sisto r m odules * 6 p o w e r transistors and 6 free w h e els are b uilt into o ne package. * All te rm in a ls are insulated fro m m o u n tin g plate.

CM IWN DC

Abstract: S3050 transistor kda 2DI150M-050
Contextual Info: 2 D I 150M-050 15 oa IW K ’+ jä : Outline Drawings POWER TRANSISTOR MODULE • 4 * A : Features • S h FE High DC Current Gain • High Speed Switching : A pplications • i G e n e r a l • £ • N C lfE ffifctt • ntfiyh Purpose Inverter Uninterruptible Power Supply

CMOS

Abstract: MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model
Contextual Info: 0.18 µm CMOS Process XC018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular RF enabled CMOS Logic and Analog Technology 0.18-micron drawn gate length N-well process, modules are also available for metal-insulatormetal capacitors, high resistive poly, dual gate