I300I Search Results

Contextual Info: 3P AC INLET RECEPTACLE ORDERING CODE: A C -0 1 6 AC — 01 6 - □ - L Z 3 - TERMINAL TYPE 1.7 • — | — DIM. 'A* i i = El j \ 7 DlA ' 1 .6 6 —•H h— 3 .2 1 — r A l %a D lA IE : f r PANEL CUT OUT DIM. (THICKNESS SEE TABLE ~

AMHS

Abstract: I300I J300
Contextual Info: Planning for the 300mm Transition Daniel Seligson, Technology and Manufacturing Engineering TME , Intel Corp. Index words: 300mm, manufacturing, cost, automation, standards, consortium Abstract Introduction Beginning in 1993 a small group of people at Intel began

I300I

Abstract: J300
Contextual Info: 300 mm Wafer Manufacturing Technology: More is Less in Semiconductor Production In the world of semiconductor manufacturing, there exists a constant demand for faster, more powerful integrated circuits at lower prices. Manufacturers who achieve this feat have the

GE h11l1

Abstract: H11L1
Contextual Info: H11L1,L3 GaA4As IRED & PHOTO-IC T E N T A TIVE DATA DEGITAL LOGIC ISOLATION. ISOLATED LIME RECEIVER. COMPUTER-PERIPHERAL INTERFACE. MICROPROCESSOR SYSTEM INTERFACE. The T O S H I B A H11L1, H11L3 is a photoco u p l e r w h ich c o m b i n e s a GaAs IRED as the emitter and an inte­

cash box guard with procedure minor project

Abstract: cash box guard project with procedure hydrofluoric acid computer motherboard Refurbishing reverse osmosis chiquita stress among student york chillers I300I roundup eco
Contextual Info: Commitment Around the Globe Designing for the Future Environmental, Health and Safety Performance Report Printed April 1999 www.intel.com Designing for the Future Table of Contents This year’s report is printed on recycled and recyclable paper. Each year we test new technologies in sustainable paper

6k16e

Abstract: TEA II04 256KX16 AS4LC256K16E0 AS4LC256K16E0-35JC
Contextual Info: Preliminary information •■ A S4LC256K16E0 1 3.3V 2 5 6 K X 16 C M O S DRAM EDO Features • 5 1 2 re fre s h c y c le s, 8 m s re fre s h in te rv a l - R A S -only o r C A S-before-RA S re fre s h o r se lf re fre s h • R e a d -m o d ify -w rite

Contextual Info: Preliminary information •■ AS4LC256K16E0 II 3.3V 256KX16 CMOS DRAM EDO Features • O rganization: 2 6 2 ,1 4 4 w o rd s x 16 bits • H igh speed - 3 5 / 4 5 / 6 0 ns RAS access tim e - 1 7 / 2 0 /2 5 ns c o lu m n address access tim e - 7 / 1 0 / 1 0 ns CAS access tim e