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Altran Magetics AMI-27-3-3 LINE FILTER 250VAC 3A CHASS MNT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AMI-27-3-3	Box	59		1	1 $31.03 10 $31.03 100 $22.62 1000 $22.62 10000 $22.62	Buy Now
DiTom Microwave Inc D3I2731 27.00 - 31.00 GHZ ISOLATOR
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DigiKey	D3I2731	Bag	17		1	1 $850.00 10 $850.00 100 $850.00 1000 $850.00 10000 $850.00	Buy Now
Altran Magetics AMI-27-36-6 LINE FILTER 250VAC 36A CHASS MNT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AMI-27-36-6	Box	17		1	1 $85.51 10 $69.78 100 $69.78 1000 $69.78 10000 $69.78	Buy Now
Alliance Sensors Group LRLI-27-300-R-00-20-A SENSOR LINEAR 304.8MM CABLE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LRLI-27-300-R-00-20-A	Tube	2		1	1 $762.50 10 $762.50 100 $762.50 1000 $762.50 10000 $762.50	Buy Now
DiTom Microwave Inc DVI2731-3 27.00 - 31.00 GHz TVAC Isolator
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DigiKey	DVI2731-3	Bulk			1	1 $1245.09 10 $1245.09 100 $1245.09 1000 $1245.09 10000 $1245.09	Buy Now

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I273 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
GA200HS60S1PbF Contextual Info: Bulletin I27305 01/07 GA200HS60S1PbF "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features VCES = 600V • Generation 4 IGBT Technology • Standard speed: optimized for hard switching operating frequencies up to 1000 Hz • Very Low Conduction Losses	Original	I27305 GA200HS60S1PbF 08-Mar-07 GA200HS60S1PbF	PDF
40HF Contextual Info: Bulletin I27310 01/07 IRKJS209/150P SCHOTTKY RECTIFIER 200 Amp Description/ Features The IRKJS209. Schottky rectifier Common Anode has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical	Original	I27310 IRKJS209/150P IRKJS209. 40HF	PDF
L500H Contextual Info: Bulletin I27308 01/06 GB10RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 12A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft	Original	I27308 GB10RF60K E78996 12-Mar-07 L500H	PDF
Contextual Info: Bulletin I27307 01/07 GB20RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 21A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft	Original	I27307 GB20RF60K E78996 12-Mar-07	PDF
Contextual Info: Bulletin I27309 01/07 GB50RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 48A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft	Original	I27309 GB50RF60K 12-Mar-07	PDF
273B Abstract: ESAB92-02 ESAB92M-02 ESAB92M-03 ESAC06-06 ESAC25-02C ESAC25-02N ESAC25-04C Contextual Info: 54 54 54 54 273B 27 3C 273A ! 273B 273A 1273C 54 54 54 54 273B 273C 273A 273A 273B 273C 273B 273C 1273A 273A 54 273B I273C 273C 273A 273B 54 273A 640G 273A 154 LOLOIO LOLO W m Èêtêèê œmm m HJ ó >i» n n n Q € -pa-f5 G & E a # e M it $ Ö & X « >P#	OCR Scan	ESAB92-02 ESAB92M-02 ESAB92M-03 ESAC06-06 ESAC25-02C BSAC25-02D ESAC25-02N 25MAX 24MIN 273B ESAB92-02 ESAB92M-02 ESAC06-06 ESAC25-02C ESAC25-02N ESAC25-04C	PDF
GB30RF60K Abstract: ntc 901 Contextual Info: Bulletin I27303 01/07 GB30RF60K IGBT PIM MODULE VCES = 600V Features • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10 s Short Circuit Capability Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics	Original	I27303 GB30RF60K 12-Mar-07 GB30RF60K ntc 901	PDF
Contextual Info: Bulletin I27315 02/07 CPV363M4UPbF UltraFast IGBT IGBT SIP MODULE 1 Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz	Original	I27315 CPV363M4UPbF 360Vdc, 12-Mar-07	PDF
Contextual Info: Bulletin I27302 01/07 GB50XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 48A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft	Original	I27302 GB50XF60K 80merchantability, 12-Mar-07	PDF
CPV364M4FPbF Contextual Info: Bulletin I27316 02/07 CPV364M4FPbF IGBT SIP MODULE Fast IGBT Features 1 • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for medium operating 1 to 10 kHz	Original	I27316 CPV364M4FPbF 360Vdc, 12-Mar-07 CPV364M4FPbF	PDF
Contextual Info: Bulletin I27311 01/07 IRKJS440/030P SCHOTTKY RECTIFIER 440 Amp Description/ Features The IRKJS440. Schottky rectifier Common Anode has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. Typical	Original	I27311 IRKJS440/030P IRKJS440. 12-Mar-07	PDF
ESAC25-02N Abstract: ESAC06-06 273B ESAB92-02 ESAB92M-02 ESAB92M-03 ESAC25-02C ESAC25-04C esac31-02d ESAC25M02D Contextual Info: 54 54 54 54 273B 27 3C 273A ! 273B 273A 1273C 54 54 54 54 273B 273C 273A 273A 273B 273C 273B 273C 1273A 273A 54 273B I273C 273C 273A 273B 54 273A 640G 273A 154 LOLOIO LOLO W m Èêtêèê œmm m HJ ó >i» n n n Q € -pa-f5 G & E a # e M it $ Ö & X « >P#	OCR Scan	ESAB92-02 ESAB92M-02 ESAB92M-03 ESAC06-06 ESAC25-02C BSAC25-02D ESAC25-02N ESAC39-06N ESAC39M-04C ESAC39M-04D ESAC25-02N ESAC06-06 273B ESAB92-02 ESAB92M-02 ESAC25-02C ESAC25-04C esac31-02d ESAC25M02D	PDF
Contextual Info: Bulletin I27304 01/07 IRK.166, .196, .236.PbF SERIES STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability	Original	I27304 E78996 12-Mar-07	PDF
Contextual Info: Bulletin I27302 01/07 GB50XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 48A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft	Original	I27302 GB50XF60K	PDF

I27301 Abstract: L200H Contextual Info: Bulletin I27301 01/07 GB75XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 64A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft	Original	I27301 GB75XF60K 80merchantability, 12-Mar-07 L200H	PDF
Contextual Info: Bulletin I27310 01/07 IRKJS209/150P SCHOTTKY RECTIFIER 200 Amp Description/ Features The IRKJS209. Schottky rectifier Common Anode has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical	Original	I27310 IRKJS209/150P IRKJS209. 12-Mar-07	PDF
Contextual Info: Bulletin I27312 02/07 CPV362M4UPbF IGBT SIP MODULE UltraFast IGBT Features 1 • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz	Original	I27312 CPV362M4UPbF 360Vdc, 12-Mar-07	PDF
Contextual Info: Bulletin I27306 01/06 GB15RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 17A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics	Original	I27306 GB15RF60K E78996 12-Mar-07	PDF
273B Abstract: ESAB92-02 ESAB92M-02 ESAB92M-03 ESAC06-06 ESAC25-02C ESAC25-02N ESAC25-04C esac25m04c Contextual Info: 54 54 54 54 273B 27 3C 273A ! 273B 273A 1273C 54 54 54 54 273B 273C 273A 273A 273B 273C 273B 273C 1273A 273A 54 273B I273C 273C 273A 273B 54 273A 640G 273A 154 LOLOIO LOLO W m Èêtêèê œmm m HJ ó >i» n n n Q € -pa-f5 G & E a # e M it $ Ö & X « >P#	OCR Scan	ESAB92-02 ESAB92M-02 ESAB92M-03 ESAC06-06 ESAC25-02C BSAC25-02D ESAC25-02N ESAC39-06N ESAC39M-04C ESAC39M-04D 273B ESAB92-02 ESAB92M-02 ESAC06-06 ESAC25-02C ESAC25-02N ESAC25-04C esac25m04c	PDF
Contextual Info: Bulletin I27300 01/07 GB20XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 21A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft	Original	I27300 GB20XF60K	PDF
Contextual Info: Bulletin I27307 01/07 GB20RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 21A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft	Original	I27307 GB20RF60K	PDF
Contextual Info: Bulletin I27309 01/07 GB50RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 48A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft	Original	I27309 GB50RF60K	PDF
Contextual Info: Bulletin I27303 01/07 GB30RF60K IGBT PIM MODULE VCES = 600V Features • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10 s Short Circuit Capability Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics	Original	I27303 GB30RF60K	PDF
Contextual Info: Bulletin I27300 01/07 GB20XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 21A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft	Original	I27300 GB20XF60K 80merchantability, 12-Mar-07	PDF

I273 Search Results

I273 Price and Stock

Altran Magetics AMI-27-3-3

DiTom Microwave Inc D3I2731

Altran Magetics AMI-27-36-6

Alliance Sensors Group LRLI-27-300-R-00-20-A

DiTom Microwave Inc DVI2731-3

I273 Datasheets Context Search

GA200HS60S1PbF

40HF

L500H

273B

GB30RF60K

CPV364M4FPbF

ESAC25-02N

I27301

273B