I22 MARKING Search Results

RT7321

Contextual Info: RT7321 Linear LED Driver for High-Voltage LED Lamps General Description Features The RT7321 is a simple and robust constant-current regulator designed to provide a cost-effective solution for driving high-voltage LEDs in LED lamp applications. The RT7321 is equipped with a proprietary control mechanism

Contextual Info: Radial Leaded Capacitors Metallized Polypropylene Dielectric Preformed Case with Epoxy Fill Power Capacitors Type RBPP Performance Testing Physical Dielectric Material E ectrode Material Winding Construction Lead Material Enclosure Component Marking Temperature Range

diode 4148

Abstract: 4148 diode diode do35 C 4148 B916 FDLL4148 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
Contextual Info: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914

diode do35 C 4148

Abstract: diode 4448 FAIRCHILD DIODE diode f 4148 1n914b fairchild 914
Contextual Info: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914

transistor marking s1a

Contextual Info: FJX3904 NPN Epitaxial Silicon Transistor • General Purpose Transistor 3 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCES Collector-Emitter Voltage

transistor marking s1a

Abstract: TRANSISTOR S1A FJX3904 FJX3904TF 130010 TRANSISTOR I22 marking
Contextual Info: FJX3904 NPN Epitaxial Silicon Transistor • General Purpose Transistor 3 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCES Collector-Emitter Voltage

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

W32 MARKING

Abstract: M34571G4FP M34571G4-XXXFP M34571G6FP M34571G6-XXXFP M34571GDFP M34571GD-XXXFP PRSP0024GA-A
Contextual Info: 4571 Group REJ03B0179-0102 Rev.1.02 May 25, 2007 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4571 Group is a 4-bit single-chip microcomputer designed with CMOS technology. Its CPU is that of the 4500 series using a simple, high-speed instruction set. The computer is equipped

KSA3010

Abstract: KSA3010OTU KSA3010RTU KSC4010 I22 marking A3010R transistor marking 020
Contextual Info: KSA3010 PNP Epitaxial Silicon Transistor • • • • • Audio Power Amplifier High Current Capability : IC = - 6A High Power Dissipation Wide S.O.A Complement to KSC4010 TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted

LM371

Abstract: LM3711XKMM-232
Contextual Info: LM3710,LM3711 LM3710/LM3711 Microprocessor Supervisory Circuits with Power Fail Input, Low Line Output, Manual Reset and Watchdog Timer Literature Number: SNVS150D LM3710/LM3711 Microprocessor Supervisory Circuits with Power Fail Input, Low Line Output, Manual Reset and Watchdog

LM741

Abstract: LM741 null adjustment voltage follower lm741 application LM741 block diagram LM741 null adjustment lm741 operational amplifier as summing amplifier LM741 application note LM741 datasheet LM741 equivalent features LM741
Contextual Info: LM741 Single Operational Amplifier Features Description „ The LM741 series are general purpose operational amplifiers. It is intended for a wide range of analog applications. The high gain and wide range of operating voltage provide superior performance in intergrator,

Contextual Info: FDS4672A tm 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

FDS4672A

Contextual Info: FDS4672A tm 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Contextual Info: tm FDS6576 P-Channel 2.5V Specified PowerTrench“ MOSFET Features General Description –11 A, –20 V. RDS ON = 0.014 :@ VGS = –4.5 V This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced ® PowerTrench process. It has been optimized for power

Contextual Info: FDW2508PB Dual P-Channel –1.8V Specified PowerTrench MOSFET –12V, –6A, 18mΩ Features General Description ̈ Max rDS on = 18mΩ at VGS = –4.5V, ID = –6A This P-Channel –1.8V specified MOSFET uses Fairchild Semiconductor’s advanced low voltage PowerTrench®. It has

FDS6576

Contextual Info: tm FDS6576 P-Channel 2.5V Specified PowerTrench“ MOSFET General Description Features This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced ® PowerTrench process. It has been optimized for power management applications with a wide range of gate

FDMC3300NZA

Contextual Info: FDMC3300NZA MOSFET tm Monolithic Common Drain N-Channel 2.5V Specified PowerTrench 20V, 8A, 26mΩ Features General Description „ Max rDS on = 26mΩ at VGS = 4.5V, ID = 8.0A This dual N-Channel MOSFET has been designed using „ Max rDS(on) = 34mΩ at VGS = 2.5V, ID = 7.0A

FDD8586

Abstract: FDU8586
Contextual Info: FDD8586/FDU8586 N-Channel PowerTrench MOSFET 20V, 35A, 5.5mΩ Features tm General Description „ Max rDS on = 5.5mΩ at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using

FDMB668P

Abstract: marking 668
Contextual Info: FDMB668P tm P-Channel 1.8V Logic Level PowerTrench MOSFET -20V, -6.1A, 35mΩ Features General Description FDMB668P is excellent for load switch and DC-DC conversion among portable electronics. It achieves an optimal balance among efficiency, thermal transfer and small form by integrating

FDMC8554

Contextual Info: FDMC8554 N-Channel Power Trench MOSFET 20V, 16.5A, 5mΩ Features tm General Description „ Max rDS on = 5mΩ at VGS = 10V, ID = 16.5A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for switching performance and ultra low

Contextual Info: FDS4470 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Contextual Info: A PRELIMINARY Æ Ù l c a l i f o r n i a m ic ro devices polsi 27A90/91 ►► ► ► ► 9/10 CHANNEL LIVE ESD PROTECTION ARRAY Features Pin Assignments • Live ESD protection up to 10KV • EFI noise filter for very high frequencies i o n GND 2 a n IN I

FDMS2672

Contextual Info: FDMS2672 N-Channel UltraFET Trench MOSFET 200V, 20A, 77mΩ Features tm General Description „ Max rDS on = 77mΩ at VGS = 10V, ID = 3.7A UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge,

FDS4470

Contextual Info: FDS4470 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for