I111F Search Results

Contextual Info: HITACHI 2SC4647-Silicon NPN Triple Diffused High Voltage Amplifier Features I111f TO-92 1 • High break down voltage V(BR)CEO “ 300 v M in- Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCB0

Contextual Info: TOSHIBA TENTATIVE TC5816BDC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 Mbit 2 M x 8 bit CMOS NAND E2PROM (2M BYTE Sm artM edia ) DESCRIPTION The TC5816BDC device is a single 5.0 volt 16 M (17,301,504) bit NAND Electrically Erasable and