I0138 Search Results

20ETF

Contextual Info: Bulletin I0138J 01/00 IR207LM.CS02CB SERIES FAST RECOVERY DIODES Junction Size: Rectangular 207 x 157 mils Wafer Size: 4" VRRM Class: 200 to 600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 20ETF Series Major Ratings and Characteristics

UM207

Contextual Info: Bulletin I0138J rev. A 05/00 IR207LM.CS02CB SERIES FAST RECOVERY DIODES Junction Size: Rectangular 207 x 157 mils Wafer Size: 4" VRRM Class: 200 to 600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 20ETF Series Major Ratings and Characteristics

ICS 93889

Abstract: 20ETF WAFER International Rectifier
Contextual Info: Bulletin I0138J rev. A 05/00 IR207LM.CS02CB SERIES FAST RECOVERY DIODES Junction Size: Rectangular 207 x 157 mils Wafer Size: 4" VRRM Class: 200 to 600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 20ETF Series Major Ratings and Characteristics

B1374

Abstract: M48T59 M48T59Y M4T28-BR12SH1 SOH28 zua11
Contextual Info: r z r j S G S ’TH O M S O N * 7 Mm M48T59 IS fflD lg ^ Q IlL K g T n O R ilO ® CMOS 8K x 8 TIMEKEEPER SRAM INTEGRATED ULTRA LOW POWER SRAM, REALTIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY FREQUENCY TEST OUTPUT for REALTIME CLOCK AUTOMATIC POWER-FAL CHIP DESELECTand

Contextual Info: M 48T59 A 7 # . [M » [g [L I g m M D (g S _ M 4 8 T 5 9 Y / T T S G S -T H O M S O N 64Kb (8K x 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ FREQUENCY TEST OUTPUT for REAL TIME

5000B

Abstract: 5384B ispLSI 5128VE SSTL-2 5128B
Contextual Info: I N - S Y S T E M P R O G R A M M A B L E S u p e r W I D E C P L D s ispMACH 5000B PLDs for a 64-Bit World BFW III: The Third Generation of SuperWIDE PLDs with Improved Performance and Architecture The ispMACH™ 5000B Family is the next generation of