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I652HLCG
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SERPAC Electronic Enclosures
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BOX JNCTN CLR/GRY 17.8X16.3X11.2 |
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452.4KB |
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I652HLGG
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SERPAC Electronic Enclosures
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BOX PLAS GRY 17.750""L X 16.270""W |
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452.4KB |
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GPI65005DF
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GaNPower
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N-channel 650V 5A GaN Power HEMT with 240 mΩ Rds(on) and 2.6 nC gate charge in a 5x6 mm DFN package, designed for high-frequency switching applications requiring low input capacitance and zero reverse recovery charge. |
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SLI65R090E7
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Maplesemi
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650V N-Channel Super-JMOSFET with 38A continuous drain current, 78mΩ typical RDS(on) at VGS = 10V, low gate charge of 52nC, and 100% avalanche tested for high reliability in switching power supplies. |
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GPI65010DF56
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GaNPower
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N-channel 650V 10A GaN Power HEMT in 5x6 DFN package with 120 mΩ RDS(on), 2.6 nC gate charge, and zero reverse recovery charge, designed for high-frequency switching applications requiring high power density and efficiency. |
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GPI65007DF
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GaNPower
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N-channel 650V 7A GaN Power HEMT in 5x6 DFN package with 170 mΩ Rds(on), 2.1 nC gate charge, and zero reverse recovery charge, designed for high-frequency switching applications requiring high power density and efficiency. |
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GPI65030DFN
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GaNPower
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N-channel 650V 30A GaN Power HEMT in 8x8 DFN package with 55 mΩ Rds(on), 5.8 nC gate charge, and zero reverse recovery charge, suitable for high-frequency switching applications requiring high power density and efficiency. |
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GPI6508DFIC
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GaNPower
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650V, 170 mΩ, 7.5A GaN Power IC in DFN5x6 package with integrated gate driver, featuring high dv/dt capability, low input capacitance, and fast switching for power adapters and switching power applications. |
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GPI65015DFNL
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GaNPower
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N-channel 650V 15A GaN Power HEMT in 8x8 DFN package with 85 mΩ Rds(on), 3.3 nC gate charge, and zero reverse recovery charge, designed for high-frequency switching applications requiring high power density and efficiency. |
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GPI65005DF
