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I23128
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Unknown
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Shortform IC and Component Datasheets (Plus Cross Reference Data) |
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SI2316
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Shenzhen Heketai Electronics Co Ltd
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N-channel MOSFET in SOT-23 package with 30V drain-source voltage, 3.6A continuous drain current, and 50mΩ on-resistance at 4.5V gate-source voltage, suitable for low power DC-DC converters and load switch applications. |
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SI2312
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Shenzhen Heketai Electronics Co Ltd
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N-channel MOSFET in SOT-23 package with 20V drain-source voltage, 5A continuous drain current, and ultra-low on-resistance of 31.8mΩ at 4.5V gate-source voltage. |
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SI2319
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Shenzhen Heketai Electronics Co Ltd
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P-channel MOSFET in SOT-23 package with -40V drain-source voltage, -3.0A continuous drain current, and 96mΩ on-resistance at -10V gate-source voltage, suitable for DC-DC converters and load switch applications. |
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SI2314
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Shenzhen Heketai Electronics Co Ltd
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N-channel MOSFET with 20V drain-source voltage, 4.9A continuous drain current, and 33mΩ on-resistance at 4.5V gate-source voltage, housed in a SOT-23 surface-mount package. |
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SI2312CDS-T1-GE3
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VBsemi Electronics Co Ltd
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N-Channel 20 V MOSFET in SOT-23 package with RDS(on) of 0.028 ohms at VGS = 4.5 V, continuous drain current of 6 A, and gate charge of 8.8 nC, suitable for DC/DC converters and load switches. |
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SI2315
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Shenzhen Heketai Electronics Co Ltd
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P-channel MOSFET in SOT-23 package with -12V drain-source voltage, -3.5A continuous drain current, and low on-resistance of 55mΩ at VGS=-8V, suitable for DC-DC converters and load switch applications. |
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SI2318
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Shenzhen Heketai Electronics Co Ltd
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N-channel MOSFET with 40V drain-source voltage, 3.9A continuous drain current, and 45mΩ on-resistance at 10V gate-source voltage, housed in a SOT-23 surface-mount package. |
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SI2317
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Shenzhen Heketai Electronics Co Ltd
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P-channel MOSFET with -30V drain-source voltage, -3.1A continuous drain current, and 80mΩ on-resistance at -12V gate-source voltage, designed for DC-DC converters and load switch applications in SOT-23 package. |
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SI2310
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Shenzhen Heketai Electronics Co Ltd
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N-channel low voltage MOSFET in SOT-23 package with 60V drain-source voltage, 3A continuous drain current, and low on-resistance of 105mΩ at VGS=10V, suitable for DC-DC converters and load switch applications. |
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SI2310
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VBsemi Electronics Co Ltd
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N-Channel 60-V (D-S) MOSFET with RDS(on) of 0.085 ohms at VGS = 10 V, continuous drain current of 4.0 A, and gate charge of 2.1 nC, available in SOT23 package. |
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SI2311
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Shenzhen Heketai Electronics Co Ltd
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P-channel MOSFET in SOT-23 package with -8V drain-source voltage, -3.0A continuous drain current, and low on-resistance of 45mΩ at VGS=-4.5V, suitable for DC-DC converters and load switch applications. |
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SI2316
