HZU3.6B |
|
Renesas Technology
|
Silicon Epitaxial Planar Zener Diodes for Stabilizer |
|
Original |
PDF
|
HZU3.6B |
|
Renesas Technology
|
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 3.40 to 3.80; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP |
|
Original |
PDF
|
HZU36B |
|
Renesas Technology
|
Silicon Epitaxial Planar Zener Diodes for Stabilizer |
|
Original |
PDF
|
HZU36B |
|
Renesas Technology
|
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 34.00 to 38.00; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP |
|
Original |
PDF
|
HZU36B |
|
Renesas Technology
|
Silicon Epitaxial Planar Zener Diodes for Stabilizer |
|
Original |
PDF
|
HZU3.6B1 |
|
Renesas Technology
|
Silicon Epitaxial Planar Zener Diodes for Stabilizer |
|
Original |
PDF
|
HZU3.6B1 |
|
Renesas Technology
|
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 3.40 to 3.65; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP |
|
Original |
PDF
|
HZU36B1 |
|
Renesas Technology
|
|
|
Original |
PDF
|
HZU3.6B2 |
|
Renesas Technology
|
Silicon Epitaxial Planar Zener Diodes for Stabilizer |
|
Original |
PDF
|
HZU3.6B2 |
|
Renesas Technology
|
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 3.55 to 3.80; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP |
|
Original |
PDF
|
HZU36B2 |
|
Renesas Technology
|
|
|
Original |
PDF
|
HZU3.6B3 |
|
Renesas Technology
|
|
|
Original |
PDF
|
HZU36B3 |
|
Renesas Technology
|
|
|
Original |
PDF
|